|
|
|
Novel intelligent devices: Two-dimensional materials based memristors |
Lena Du1, Zhongchang Wang2( ), Guozhong Zhao1() |
1. Department of Physics, Capital Normal University, Beijing 100048, China
2. International Iberian Nanotechnology Laboratory (INL) Avenida Mestre José Veiga s/n, Braga 4715–330, Portugal |
|
|
|
|
Abstract Two-dimensional (2D) materials with atomic thickness, non-volatile resistive switching feature and compatibility with the semiconducting technology are naturally a good media of memristors. 2D materials-based memristors with excellent performance, low-power consumption and high integration density can be integrated with other circuit components to implement the complicate logic computing, which will become a key driving force for the development of artificial intelligence.
|
|
Corresponding Author(s):
Zhongchang Wang,Guozhong Zhao
|
|
Issue Date: 25 February 2022
|
|
| 1 |
AI and Compute: https://openai.com/blog/ai-and-compute/
|
| 2 |
W. Q. Zhang, B. Gao, J. S. Tang, P. Yao, S. M. Yu, M. F. Chang, H. J. Yoo, H. Qian, and H. Q. Wu, Neuro-inspired computing chips, Nat. Electron. 3, 371 (2020)
https://doi.org/10.1038/s41928-020-0435-7
|
| 3 |
Y. Xi, B. Gao, J. S. Tang, A. Chen, M. F. Chang, X. S. Hu, J. V. D. Spiegel, and H. Qian, In-memory learning with analog resistive switching memory: A review and perspective, Proc. IEEE 109(1), 14 (2021)
https://doi.org/10.1109/JPROC.2020.3004543
|
| 4 |
Y. J. Zhang, T. Oka, R. Suzuki, J. T. Ye, and Y. Iwasa, Electrically switchable chiral light-emitting transistor, Science 344(6185), 725 (2014)
https://doi.org/10.1126/science.1251329
|
| 5 |
R. J. Ge, X. H. Wu, L. B. Liang, S. M. Hus, Y. Q. Gu, E. Okogbue, H.y Chou, J. P. Shi, Y. F. Zhang, S. K. Banerjee, Y. Jung, J. C. Lee, and D. Akinwande, A library of atomically thin 2D materials featuring the conductive-point resistive switching phenomenon, Adv. Mater. 33(7), 2007792 (2021)
https://doi.org/10.1002/adma.202007792
|
| 6 |
L. Liu, Y. Li, X. D. Huang, J. Chen, Z. Yang, K.-H. Xue, M. Xu, H. W. Chen, P. Zhou, and X. S. Miao, Low-power memristive logic device enabled by controllable oxidation of 2D HfSe2 for in-memory computing, Adv. Sci. 8(15), 2005038 (2021)
https://doi.org/10.1002/advs.202005038
|
| 7 |
H. Zhao, Z. P. Dong, H. Tian, D. DiMarzi, M. G. Han, L. H. Zhang, X. D. Yan, F. X. Liu, L. Shen, S. J. Han, S. Cronin, W. Wu, J. Tice, J. Guo, and H. Wang, Atomically thin femtojoule memristive device, Adv. Mater. 29(47), 1703232 (2017)
https://doi.org/10.1002/adma.201703232
|
| 8 |
Z. C. Zhou, F. Y. Yang, S. Wang, L. Wang, X. F. Wang, C. Wang, Y. Xie, and Q. Liu, Emerging of two-dimensional materials in novel memristor, Front. Phys. 17(2), 23204 (2022)
https://doi.org/10.1007/s11467-021-1114-5
|
| 9 |
L. Wang, X. Z. Xu, L. N. Zhang, R. X. Qiao, M. H. Wu, Z. C. Wang, S. Zhang, J. Liang, Z. H. Zhang, Z. B. Zhang, W. Chen, X. D. Xie, J. Y. Zong, Y. W. Shan, Y. Guo, M. Willinger, H. Wu, Q. Y. Li, W. L. Wang, P. Gao, S. W. Wu, Y. Zhang, Y. Jiang, D. P. Yu, E. G. Wang, X. D. Bai, Z. J. Wang, F. Ding, and K. H. Liu, Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper, Nature 570, 91 (2019)
https://doi.org/10.1038/s41586-019-1226-z
|
| 10 |
S. C. Chen, M. R. Mahmoodi, Y. Y. Shi, C. Mahata, B. Yuan, X. H. Liang, C. Wen, F. Hui, D. Akinwande, D. B. Strukov, and M. Lanza, Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks, Nat. Electron. 3, 638 (2020)
https://doi.org/10.1038/s41928-020-00473-w
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
| |
Shared |
|
|
|
|
| |
Discussed |
|
|
|
|
