Excited state biexcitons in monolayer WSe<sub>2</sub> driven by vertically grown graphene nanosheets with high-density electron trapping edges

doi:10.1007/s11467-022-1232-8

Front. Phys.

2023, Vol. 18

Issue (3) : 33306 https://doi.org/10.1007/s11467-022-1232-8

RESEARCH ARTICLE

Excited state biexcitons in monolayer WSe₂ driven by vertically grown graphene nanosheets with high-density electron trapping edges

Bo Wen¹, Da-Ning Luo¹, Ling-Long Zhang^1,², Xiao-Lin Li¹, Xin Wang³, Liang-Liang Huang¹, Xi Zhang¹(

), Dong-Feng Diao¹

¹. Institute of Nanosurface Science and Engineering Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Shenzhen University, Shenzhen 518060, China
². College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing 211106, China
³. Research Center of Medical Plasma Technology, Shenzhen University, Shenzhen 518060, China

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Abstract

Interface engineering in atomically thin transition metal dichalcogenides (TMDs) is becoming an important and powerful technique to alter their properties, enabling new optoelectronic applications and quantum devices. Interface engineering in a monolayer WSe₂ sample via introduction of high-density edges of standing structured graphene nanosheets (GNs) is realized. A strong photoluminescence (PL) emission peak from intravalley and intervalley trions at about 750 nm is observed at the room temperature, which indicated the heavily p-type doping of the monolayer WSe₂/thin graphene nanosheet-embedded carbon (TGNEC) film heterostructure. We also successfully triggered the emission of biexcitons (excited state biexciton) in a monolayer WSe₂, via the electron trapping centers of edge quantum wells of a TGNEC film. The PL emission of a monolayer WSe₂/GNEC film is quenched by capturing the photoexcited electrons to reduce the electron-hole recombination rate. This study can be an important benchmark for the extensive understanding of light–matter interaction in TMDs, and their dynamics.

Keywords excited state biexcitons monolayer WSe₂ vertically graphene electron trapping edges

Corresponding Author(s): Xi Zhang

Issue Date: 11 January 2023

Cite this article:

Bo Wen,Da-Ning Luo,Ling-Long Zhang, et al. Excited state biexcitons in monolayer WSe₂ driven by vertically grown graphene nanosheets with high-density electron trapping edges[J]. Front. Phys. , 2023, 18(3): 33306.

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https://academic.hep.com.cn/fop/EN/10.1007/s11467-022-1232-8
https://academic.hep.com.cn/fop/EN/Y2023/V18/I3/33306

Fig.1 (a) Structural model of vertical graphene nanosheet-embedded (GNEC) film. (b) Structural model of vertical thin graphene nanosheet-embedded (TGNEC) film. (c) High-resolution TEM micrographs of 80 V GNEC film cross-section sample. (d) Top-view TEM images of carbon films. Insets show the FFT images and the crystal plane spacing.

Fig.2 (a) Measured PL spectra from WSe₂/GNEC (purple line), WSe₂/TGNEC (red line) and WSe₂/SiO₂ (blue line) at 77 K. (b) Schematic representation of excitons and the electrons trapped by quantum wells (QWs) for TGNEC. The lower part is GNEC's conductive network. (c) Measured Raman spectra from WSe₂/TGNEC, WSe₂/GNEC and WSe₂/SiO₂ (blue line). The right side is the state under the microscope.

Fig.3 Power-dependent PL measurements. (a) Measured PL spectra from WSe₂/TGNEC at various excitation powers of the 532 nm laser. Spectrum have been fitted by Gaussian function using three peaks: orange (A peak), yellow (T peak) and blue (X peak).Red line shows the cumulative fit. Purple line represents defect peak. (b) log–log plot showing the variation of integrated PL intensity of peak X as a function of peak A. From the fitting curve (orange solid line) the PL intensity of peak X grows superlinearly (α ≈ 1.35), with the increase of the excitation power. (c) Variation of A, T and X peak positions with the increase in laser power. (d) Integrated PL intensity values plotted with the increase in laser power. (e) Full width at half maximum (FWHM) variation with laser power. (f) Representative formation of a trion (T) and neutral biexciton (X).

Fig.4 Temperature-dependent PL measurements. (a) Measured PL spectra at various temperatures for WSe₂/TGNEC. (b–d) Measured (b) peak position, (c) peak intensity and (d) FWHM of PL peaks A, T and X as a function of temperature in WSe₂/TGNEC. (e) Schematic diagram of exciton b inding at low and high temperatures.

Tab.1 Comparison of experimental and theoretical TMD excitonic binding energies (meV)^a.

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