Epitaxial growth of 2D gallium selenide flakes for strong nonlinear optical response and visible-light photodetection

doi:10.1007/s11467-023-1277-3

Front. Phys.

2023, Vol. 18

Issue (5) : 52302 https://doi.org/10.1007/s11467-023-1277-3

RESEARCH ARTICLE

Epitaxial growth of 2D gallium selenide flakes for strong nonlinear optical response and visible-light photodetection

Mengting Song¹, Nan An¹, Yuke Zou¹, Yue Zhang¹, Wenjuan Huang^1,²(

), Huayi Hou¹, Xiangbai Chen¹(

)

¹. Hubei Key Laboratory of Optical Information and Pattern Recognition, Wuhan Institute of Technology, Wuhan 430205, China
². State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

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Abstract

As an emerging group III−VI semiconductor two-dimensional (2D) material, gallium selenide (GaSe) has attracted much attention due to its excellent optical and electrical properties. In this work, high-quality epitaxial growth of few-layer GaSe nanoflakes with different thickness is achieved via chemical vapor deposition (CVD) method. Due to the non-centrosymmetric structure, the grown GaSe nanoflakes exhibits excellent second harmonic generation (SHG). In addition, the constructed GaSe nanoflake-based photodetector exhibits stable and fast response under visible light excitation, with a rise time of 6 ms and decay time of 10 ms. These achievements clearly demonstrate the possibility of using GaSe nanoflake in the applications of nonlinear optics and (opto)-electronics.

Keywords 2D materials gallium selenide second harmonic generation chemical vapor deposition photodetector

Corresponding Author(s): Wenjuan Huang,Xiangbai Chen

Issue Date: 10 April 2023

Cite this article:

Mengting Song,Nan An,Yuke Zou, et al. Epitaxial growth of 2D gallium selenide flakes for strong nonlinear optical response and visible-light photodetection[J]. Front. Phys. , 2023, 18(5): 52302.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-023-1277-3
https://academic.hep.com.cn/fop/EN/Y2023/V18/I5/52302

Fig.1 Synthesis of GaSe nanoflakes by CVD method. (a) Schematic diagram of 2D GaSe nanoflakes growth by a CVD system. (b) Optical image of GaSe nanoflake. Inset: AFM image of GaSe nanoflake. (c) TEM image of GaSe nanoflake. (d) HRTEM image of GaSe nanoflake. Inset: Corresponding SAED pattern. (e) EDX spectrum of GaSe nanoflake. Inset: Atomic ratio of Ga/Se.

Fig.2 (a) Thickness-dependent Raman spectra of GaSe nanoflakes. (b) Thickness-dependent PL spectra of GaSe nanoflakes.

Fig.3 The second harmonic generation (SHG) test of 2D GaSe nanoflake: (a) SHG intensity of GaSe flake with different excitation power and (b) the corresponding linear fitting. (c) SHG intensity of GaSe nanoflakes with different thicknesses. (d) Wavelength dependence of SHG intensity from 800 to 1080 nm. (e) SHG polarization test of 2D GaSe nanoflake, rotating the sample angle θ at a step of 15^o, showing a 6-axis rotating scale; (f) SHG mapping of a single GaSe nanoflake.

Tab.1 Comparison of the key parameters of our device to the reported 2D materials and the other structures of GaSe-based photodetectors.

Fig.4 (a) Schematic image of the photodetector. (b) I?V characteristics of the device in the dark and under light illumination with wavelength at 532 nm (V_bias = 5 V). (c) Time-resolved photoresponse of the device at 532 nm (V_bias = 2 V). (d) Rise and decay curve measured under 532 nm excitation at V_bias = 2 V. (e) Photocurrent as a function of illumination intensity at V_bias = 1 V under 532 nm excitation. (f) The corresponding fitting curve of photocurrent versus incident light intensities by the power law.

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