High-sensitive two-dimensional PbI<sub>2</sub> photodetector with ultrashort channel

doi:10.1007/s11467-023-1323-1

Front. Phys.

2023, Vol. 18

Issue (6) : 63305 https://doi.org/10.1007/s11467-023-1323-1

RESEARCH ARTICLE

High-sensitive two-dimensional PbI₂ photodetector with ultrashort channel

Kaiyue He^1,², Jijie Zhu¹, Zishun Li², Zhe Chen², Hehe Zhang¹, Chao Liu¹, Xu Zhang¹, Shuo Wang¹, Peiyi Zhao¹, Yu Zhou¹, Shizheng Zhang¹, Yao Yin¹(

), Xiaorui Zheng²(

), Wei Huang¹, Lin Wang¹(

)

¹. School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University, Nanjing 211816, China
². Research Center for Industries of the Future (RCIF), School of Engineering, Westlake University, Hangzhou 310030, China

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Abstract

Photodetectors based on two-dimensional (2D) semiconductors have attracted many research interests owing to their excellent optoelectronic characteristics and application potential for highly integrated applications. However, the unique morphology of 2D materials also restricts the further improvement of the device performance, as the carrier transport is very susceptible to intrinsic and extrinsic environment of the materials. Here, we report the highest responsivity (172 A/W) achieved so far for a PbI₂-based photodetector at room temperature, which is an order of magnitude higher than previously reported. Thermal scanning probe lithography (t-SPL) was used to pattern electrodes to realize the ultrashort channel (~60 nm) in the devices. The shortening of the channel length greatly reduces the probability of the photo-generated carriers being scattered during the transport process, which increases the photocurrent density and thus the responsivity. Our work shows that the combination of emerging processing technologies and 2D materials is an effective route to shrink device size and improve device performance.

Keywords two-dimensional photodetectors carrier scattering ultrashort channel thermal scanning probe lithography PbI₂ nanosheets

Corresponding Author(s): Yao Yin,Xiaorui Zheng,Lin Wang

Issue Date: 21 July 2023

Cite this article:

Kaiyue He,Jijie Zhu,Zishun Li, et al. High-sensitive two-dimensional PbI₂ photodetector with ultrashort channel[J]. Front. Phys. , 2023, 18(6): 63305.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-023-1323-1
https://academic.hep.com.cn/fop/EN/Y2023/V18/I6/63305

Fig.1 The fabrication process of PbI₂-based photodetector with ultrashort channel. (a) Schematic illustration of synthesizing PbI₂ nanosheets via solution-processed method. (b) The optical image of the as-grown PbI₂ nanosheet with regular hexagonal shape and flat surface. (c) Schematic illustration of the t-SPL patterning process for the fabrication of metal electrodes with ultrashort spacing. (d) SEM image of electrodes with a spacing of 60 nm. (e) Schematic illustration of transfer process. (f) Optical image of a PbI₂-based photodetector with ultrashort channel.

Fig.2 Photodetection performance of PbI₂-based ultrashort channel photodetector at room temperature. The wavelength of the incident laser is 405 nm. (a) I−V characteristics in the dark and under different incident power densities. Inset: A schematic drawing of the configuration of photodetector. (b) Photocurrent and responsivity versus incident power density with V_ds = 3 V. (c) I−V characteristics of photodetector in the dark and under different incident power densities with stepped positive V_g. (d) Responsivity as a function of the positive V_g. Inset: Schematic diagram of device structure with a top-gate.

Fig.3 (a) The responsivity of our ultrashort channel photodetector as compared to previous PbI₂-based photodetectors with different channel lengths. (b) Schematic image of the photoconductive effect under light illumination in the photodetectors. (c) Diffusive transport of carries when the channel length is longer than the λ_MFP. The insets show three main scattering mechanisms. (d) Ballistic transport when the channel length is shorter than the λ_MFP.

Fig.4 Temperature-dependent photoelectric characteristics of PbI₂ ultrashort channel photodetector. All data are obtained under 3 V bias. (a, b) Photocurrent and responsivity as a function of incident power density at different temperatures. (c) Responsivity to incident light with a power density of 0.47 mW/cm² at different temperatures. (d) Detectivity (black line) and EQE (blue line) as a function of incident power density at 80 K.

Tab.1 Comparison of various figures of merit of different representative PbI₂-based photodetectors.

1	Konstantatos G.. Current status and technological prospect of photodetectors based on two-dimensional materials. Nat. Commun., 2018, 9(1): 5266 https://doi.org/10.1038/s41467-018-07643-7
2	Wu W., Wang X., Han X., Yang Z., Gao G., Zhang Y., Hu J., Tan Y., Pan A., Pan C.. Flexible photodetector arrays based on patterned CH3NH3PbI3−xClx perovskite film for real‐time photosensing and imaging. Adv. Mater., 2019, 31(3): 1805913 https://doi.org/10.1002/adma.201805913
3	Lin H.C. P. Sturmberg B.T. Lin K. Yang Y.Zheng X.K. Chong T.M. de Sterke C.Jia B., A 90-nm-thick graphene metamaterial for strong and extremely broadband absorption of unpolarized light, Nat. Photonics 13(4), 270 (2019)
4	Shkir M.S. Yahia I.Ganesh V.Bitla Y.M. Ashraf I.Kaushik A.AlFaify S., A facile synthesis of Au-nanoparticles decorated PbI2 single crystalline nanosheets for optoelectronic device applications, Sci. Rep. 8(1), 13806 (2018)
5	Fu Q., Wang X., Liu F., Dong Y., Liu Z., Zheng S., Chaturvedi A., Zhou J., Hu P., Zhu Z., Bo F., Long Y., Liu Z.. Ultrathin Ruddlesden−Popper perovskite heterojunction for sensitive photodetection. Small, 2019, 15(39): 1902890 https://doi.org/10.1002/smll.201902890
6	Zhang X., Li Z., Yan T., Su L., Fang X.. Phase-modulated multidimensional perovskites for high-sensitivity self-powered UV photodetectors. Small, 2023, 19(9): 2206310 https://doi.org/10.1002/smll.202206310
7	Lopez-Sanchez O., Lembke D., Kayci M., Radenovic A., Kis A.. Ultrasensitive photodetectors based on monolayer MoS2. Nat. Nanotechnol., 2013, 8(7): 497 https://doi.org/10.1038/nnano.2013.100
8	Guo W., Dong Z., Xu Y., Liu C., Wei D., Zhang L., Shi X., Guo C., Xu H., Chen G., Wang L., Zhang K., Chen X., Lu W.. Sensitive terahertz detection and imaging driven by the photothermoelectric effect in ultrashort-channel black phosphorus devices. Adv. Sci. (Weinh.), 2020, 7(5): 1902699 https://doi.org/10.1002/advs.201902699
9	Cai Y., Yang J., Wang F., Li S., Wang Y., Zhan X., Wang F., Cheng R., Wang Z., He J.. Ultrasensitive solar-blind ultraviolet detection and optoelectronic neuromorphic computing using α-In2Se3 phototransistors. Front. Phys., 2023, 18(3): 33308 https://doi.org/10.1007/s11467-022-1241-7
10	Li S.Zhang Y. Yang W.Liu H.Fang X., 2D perovskite Sr2Nb3O10 for high-performance UV photodetectors, Adv. Mater. 32(7), 1905443 (2020)
11	Kufer D., Konstantatos G.. Highly sensitive, encapsulated MoS2 photodetector with gate controllable gain and speed. Nano Lett., 2015, 15(11): 7307 https://doi.org/10.1021/acs.nanolett.5b02559
12	G. Menabde S., Cho H., Park N.. Interface defect-assisted phonon scattering of hot carriers in graphene. Phys. Rev. B, 2017, 96(7): 075426 https://doi.org/10.1103/PhysRevB.96.075426
13	Gao J., M. Rao A., Li H., Zhang J., Chen O.. Carrier transport dynamics in high speed black phosphorus photodetectors. ACS Photonics, 2018, 5(4): 1412 https://doi.org/10.1021/acsphotonics.7b01431
14	Tian Y., Cheng Y., Huang J., Zhang S., Dong H., Wang G., Chen J., Wu J., Yin Z., Zhang X.. Epitaxial growth of large area ZrS2 2D semiconductor films on sapphire for optoelectronics. Nano Res., 2022, 15(7): 6628 https://doi.org/10.1007/s12274-022-4308-4
15	J. Kim S., Park B., H. Noh S., S. Yoon H., Oh J., Yoo S., Kang K., Han B., C. Jun S.. Carrier scattering in quasi-free standing graphene on hexagonal boron nitride. Nanoscale, 2017, 9(41): 15934 https://doi.org/10.1039/C7NR04571A
16	H. Chen J., Jang C., Adam S., S. Fuhrer M., D. Williams E., Ishigami M.. Charged-impurity scattering in graphene. Nat. Phys., 2008, 4(5): 377 https://doi.org/10.1038/nphys935
17	Rhodes D., H. Chae S., Ribeiro-Palau R., Hone J.. Disorder in van der Waals heterostructures of 2D materials. Nat. Mater., 2019, 18(6): 541 https://doi.org/10.1038/s41563-019-0366-8
18	Xie L., Liao M., Wang S., Yu H., Du L., Tang J., Zhao J., Zhang J., Chen P., Lu X., Wang G., Xie G., Yang R., Shi D., Zhang G.. Graphene-contacted ultrashort channel monolayer MoS2 transistors. Adv. Mater., 2017, 29(37): 1702522 https://doi.org/10.1002/adma.201702522
19	Tian J., Wang Q., Huang X., Tang J., Chu Y., Wang S., Shen C., Zhao Y., Li N., Liu J., Ji Y., Huang B., Peng Y., Yang R., Yang W., Watanabe K., Taniguchi T., Bai X., Shi D., Du L., Zhang G.. Scaling of MoS2 transistors and inverters to sub-10 nm channel length with high performance. Nano Lett., 2023, 23(7): 2764 https://doi.org/10.1021/acs.nanolett.3c00031
20	Wu R., Tao Q., Li J., Li W., Chen Y., Lu Z., Shu Z., Zhao B., Ma H., Zhang Z., Yang X., Li B., Duan H., Liao L., Liu Y., Duan X., Duan X.. Bilayer tungsten diselenide transistors with on-state currents exceeding 1.5 milliamperes per micrometre. Nat. Electron., 2022, 5(8): 497 https://doi.org/10.1038/s41928-022-00800-3
21	Wu F.Ren J. Yang Y.Yan Z.Tian H.Gou G.Wang X. Zhang Z.Yang X.Wu X.L. Ren T., A 10 nm short channel MoS2 transistor without the resolution requirement of photolithography, Adv. Electron. Mater. 7(12), 2100543 (2021)
22	Wang Y., C. Kim J., J. Wu R., Martinez J., Song X., Yang J., Zhao F., Mkhoyan A., Y. Jeong H., Chhowalla M.. Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors. Nature, 2019, 568(7750): 70 https://doi.org/10.1038/s41586-019-1052-3
23	Liu Y., Duan X., Huang Y., Duan X.. Two-dimensional transistors beyond graphene and TMDCs. Chem. Soc. Rev., 2018, 47(16): 6388 https://doi.org/10.1039/C8CS00318A
24	Zhang G., Zhong J., Chen Q., Yan Y., Chen H., Guo T.. High-performance organic phototransistors with vertical structure design. IEEE Trans. Electron Dev., 2019, 66(4): 1815 https://doi.org/10.1109/TED.2019.2901054
25	Han G., Cao S., Yang Q., Yang W., Guo T., Chen H.. High-performance all-solution-processed flexible photodetector arrays based on ultrashort channel amorphous oxide semiconductor transistors. ACS Appl. Mater. Interfaces, 2018, 10(47): 40631 https://doi.org/10.1021/acsami.8b14143
26	Zhang H., Zhang Y., Song X., Yu Y., Cao M., Che Y., Dai H., Yang J., Ding X., Zhang G., Yao J.. Short channel quantum dot vertical and lateral phototransistors. Adv. Opt. Mater., 2017, 5(2): 1600434 https://doi.org/10.1002/adom.201600434
27	Zan R., M. Ramasse Q., Jalil R., Georgiou T., Bangert U., S. Novoselov K.. Control of radiation damage in MoS2 by graphene encapsulation. ACS Nano, 2013, 7(11): 10167 https://doi.org/10.1021/nn4044035
28	Zheng X., Calo A., Cao T., Liu X., Huang Z., M. Das P., Drndic M., Albisetti E., Lavini F., D. Li T., Narang V., P. King W., W. Harrold J., Vittadello M., Aruta C., Shahrjerdi D., Riedo E.. Spatial defects nanoengineering for bipolar conductivity in MoS2. Nat. Commun., 2020, 11(1): 3463 https://doi.org/10.1038/s41467-020-17241-1
29	Albisetti E., Petti D., Pancaldi M., Madami M., Tacchi S., Curtis J., P. King W., Papp A., Csaba G., Porod W., Vavassori P., Riedo E., Bertacco R.. Nanopatterning reconfigurable magnetic landscapes via thermally assisted scanning probe lithography. Nat. Nanotechnol., 2016, 11(6): 545 https://doi.org/10.1038/nnano.2016.25
30	Albisetti E., M. Carroll K., Lu X., E. Curtis J., Petti D., Bertacco R., Riedo E.. Thermochemical scanning probe lithography of protein gradients at the nanoscale. Nanotechnology, 2016, 27(31): 315302 https://doi.org/10.1088/0957-4484/27/31/315302
31	M. Carroll K., J. Giordano A., Wang D., K. Kodali V., Scrimgeour J., P. King W., R. Marder S., Riedo E., E. Curtis J.. Fabricating nanoscale chemical gradients with thermochemical nanolithography. Langmuir, 2013, 29(27): 8675 https://doi.org/10.1021/la400996w
32	Albisetti E., Petti D., Sala G., Silvani R., Tacchi S., Finizio S., Wintz S., Calò A., Zheng X., Raabe J., Riedo E., Bertacco R.. Nanoscale spin-wave circuits based on engineered reconfigurable spin-textures. Commun. Phys., 2018, 1(1): 56 https://doi.org/10.1038/s42005-018-0056-x
33	M. Carroll K., Lu X., Kim S., Gao Y., J. Kim H., Somnath S., Polloni L., Sordan R., P. King W., E. Curtis J., Riedo E.. Parallelization of thermochemical nanolithography. Nanoscale, 2014, 6(3): 1299 https://doi.org/10.1039/C3NR05696A
34	K. Ryu Cho Y., D. Rawlings C., Wolf H., Spieser M., Bisig S., Reidt S., Sousa M., R. Khanal S., D. B. Jacobs T., W. Knoll A.. Sub-10 nanometer feature size in silicon using thermal scanning probe lithography. ACS Nano, 2017, 11(12): 11890 https://doi.org/10.1021/acsnano.7b06307
35	Garcia R., W. Knoll A., Riedo E.. Advanced scanning probe lithography. Nat. Nanotechnol., 2014, 9(8): 577 https://doi.org/10.1038/nnano.2014.157
36	Liu X., Huang Z., Zheng X., Shahrjerdi D., Riedo E.. Nanofabrication of graphene field-effect transistors by thermal scanning probe lithography. APL Mater., 2021, 9(1): 011107 https://doi.org/10.1063/5.0026159
37	Xiao H., Liang T., Xu M.. Growth of ultraflat PbI2 nanoflakes by solvent evaporation suppression for high-performance UV photodetectors. Small, 2019, 15(33): 1901767 https://doi.org/10.1002/smll.201901767
38	Qi Z., Yang T., Li D., Li H., Wang X., Zhang X., Li F., Zheng W., Fan P., Zhuang X., Pan A.. High-responsivity two-dimensional p-PbI2/n-WS2 vertical heterostructure photodetectors enhanced by photogating effect. Mater. Horiz., 2019, 6(7): 1474 https://doi.org/10.1039/C9MH00335E
39	Han M., Sun J., Bian L., Wang Z., Zhang L., Yin Y., Gao Z., Li F., Xin Q., He L., Han N., Song A., X. Yang Z.. Two-step vapor deposition of self-catalyzed large-size PbI2 nanobelts for high-performance photodetectors. J. Mater. Chem. C, 2018, 6(21): 5746 https://doi.org/10.1039/C8TC01180J
40	Wang R., Li S., Wang P., Xiu J., Wei G., Sun M., Li Z., Liu Y., Zhong M.. PbI2 nanosheets for photodetectors via the facile cooling thermal supersaturation solution method. J. Phys. Chem. C, 2019, 123(14): 9609 https://doi.org/10.1021/acs.jpcc.9b01322
41	Zhang J., Huang Y., Tan Z., Li T., Zhang Y., Jia K., Lin L., Sun L., Chen X., Li Z., Tan C., Zhang J., Zheng L., Wu Y., Deng B., Chen Z., Liu Z., Peng H.. Flexible photodetectors: Low-temperature heteroepitaxy of 2D PbI2/graphene for large-area flexible photodetectors. Adv. Mater., 2018, 30(36): 1803194 https://doi.org/10.1002/adma.201870271
42	Zhang D., Liu Y., He M., Zhang A., Chen S., Tong Q., Huang L., Zhou Z., Zheng W., Chen M., Braun K., J. Meixner A., Wang X., Pan A.. Room temperature near unity spin polarization in 2D van der Waals heterostructures. Nat. Commun., 2020, 11(1): 4442 https://doi.org/10.1038/s41467-020-18307-w
43	Sun H., Zhao B., Yang D., Wangyang P., Gao X., Zhu X.. Flexible X-ray detector based on sliced lead iodide crystal. Phys. Status Solidi Rapid Res. Lett., 2017, 11(2): 1600397 https://doi.org/10.1002/pssr.201600397
44	Roth S., R. Willig W.. Lead iodide nuclear particle detectors. Appl. Phys. Lett., 1971, 18(8): 328 https://doi.org/10.1063/1.1653682
45	Sun Y., Zhou Z., Huang Z., Wu J., Zhou L., Cheng Y., Liu J., Zhu C., Yu M., Yu P., Zhu W., Liu Y., Zhou J., Liu B., Xie H., Cao Y., Li H., Wang X., Liu K., Wang X., Wang J., Wang L., Huang W.. Band structure engineering of interfacial semiconductors based on atomically thin lead iodide crystals. Adv. Mater., 2019, 31(17): 1806562 https://doi.org/10.1002/adma.201806562
46	Zhou D., Zhao P., Zhang J., Jiang X., Qin S., Zhang X., Jiang R., Deng Y., Jiang H., Zhan G., Luo Y., Ma H., Wang L.. Lithographic multicolor patterning on hybrid perovskites for nano-optoelectronic applications. Small, 2022, 18(48): 2205227 https://doi.org/10.1002/smll.202205227
47	Long M., Wang P., Fang H., Hu W.. Progress, challenges, and opportunities for 2D material based photodetectors. Adv. Funct. Mater., 2019, 29(19): 1803807 https://doi.org/10.1002/adfm.201803807
48	Xue F., Wang Z., Hou Y., Gu L., Wu R.. Control of magnetic properties of MnBi2Te4 using a van der Waals ferroelectric III2−VI3 film and biaxial strain. Phys. Rev. B, 2020, 101(18): 184426 https://doi.org/10.1103/PhysRevB.101.184426
49	Zhang J., Song T., Zhang Z., Ding K., Huang F., Sun B.. Layered ultrathin PbI2 single crystals for high sensitivity flexible photodetectors. J. Mater. Chem. C, 2015, 3(17): 4402 https://doi.org/10.1039/C4TC02712D
50	M. Furchi M., K. Polyushkin D., Pospischil A., Mueller T.. Mechanisms of photoconductivity in atomically thin MoS2. Nano Lett., 2014, 14(11): 6165 https://doi.org/10.1021/nl502339q
51	Zheng W., Zhang Z., Lin R., Xu K., He J., Huang F.. High-crystalline 2D layered PbI2 with ultrasmooth surface: Liquid-phase synthesis and application of high-speed photon detection. Adv. Electron. Mater., 2016, 2(11): 1600291 https://doi.org/10.1002/aelm.201600291
52	Wang Y., Gan L., Chen J., Yang R., Zhai T.. Achieving highly uniform two-dimensional PbI2 flakes for photodetectors via space confined physical vapor deposition. Sci. Bull. (Beijing), 2017, 62(24): 1654 https://doi.org/10.1016/j.scib.2017.11.011
53	Frisenda R., O. Island J., L. Lado J., Giovanelli E., Gant P., Nagler P., Bange S., M. Lupton J., Schuller C., J. Molina-Mendoza A., Aballe L., Foerster M., Korn T., Angel Nino M., P. de Lara D., M. Perez E., Fernandez-Rossier J., Castellanos-Gomez A.. Characterization of highly crystalline lead iodide nanosheets prepared by room-temperature solution processing. Nanotechnology, 2017, 28(45): 455703 https://doi.org/10.1088/1361-6528/aa8e5c
54	Wei Q., Shen B., Chen Y., Xu B., Xia Y., Yin J., Liu Z.. Large-sized PbI2 single crystal grown by co-solvent method for visible-light photo-detector application. Mater. Lett., 2017, 193(15): 101 https://doi.org/10.1016/j.matlet.2017.01.049
55	Lan C., Dong R., Zhou Z., Shu L., Li D., Yip S., C. Ho J.. Large‐scale synthesis of freestanding layer‐structured PbI2 and MAPbI3 nanosheets for high-performance photodetection. Adv. Mater., 2017, 29(39): 1702759 https://doi.org/10.1002/adma.201702759
56	Yang S., Han J., Zhang J., Kong Y., Liu H.. In situ growth of PbS/PbI2 heterojunction and its photoelectric properties. Nanomaterials (Basel), 2022, 12(4): 681 https://doi.org/10.3390/nano12040681
57	A. Lemieux P., Vera M., J. Durian D.. Diffusing-light spectroscopies beyond the diffusion limit: The role of ballistic transport and anisotropic scattering. Phys. Rev. E, 1998, 57(4): 4498 https://doi.org/10.1103/PhysRevE.57.4498
58	Banszerus L., Schmitz M., Engels S., Goldsche M., Watanabe K., Taniguchi T., Beschoten B., Stampfer C.. Ballistic transport exceeding 28 μm in CVD grown graphene. Nano Lett., 2016, 16(2): 1387 https://doi.org/10.1021/acs.nanolett.5b04840
59	Luo P., Liu C., Lin J., Duan X., Zhang W., Ma C., Lv Y., Zou X., Liu Y., Schwierz F., Qin W., Liao L., He J., Liu X.. Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation. Nat. Electron., 2022, 5(12): 849 https://doi.org/10.1038/s41928-022-00877-w
60	Jiang J., Xu L., Qiu C., M. Peng L.. Ballistic two-dimensional InSe transistors. Nature, 2023, 616(7957): 470 https://doi.org/10.1038/s41586-023-05819-w
61	Bardeen J., Shockley W.. Deformation potentials and mobilities in non-polar crystals. Phys. Rev., 1950, 80(1): 72 https://doi.org/10.1103/PhysRev.80.72

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