Van der Waals epitaxy of type-II band alignment CsPbI<sub>3</sub>/TMDC heterostructure for optoelectronic applications

doi:10.1007/s11467-024-1404-9

Front. Phys.

2024, Vol. 19

Issue (5) : 53206 https://doi.org/10.1007/s11467-024-1404-9

Van der Waals epitaxy of type-II band alignment CsPbI₃/TMDC heterostructure for optoelectronic applications

Chang Lu¹, Shunhui Zhang¹, Meili Chen¹, Haitao Chen², Mengjian Zhu², Zhengwei Zhang¹, Jun He¹, Lin Zhang¹(

), Xiaoming Yuan¹(

)

¹. Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics, Central South University, Changsha 410083, China
². College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China

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Abstract

Van der Waals epitaxy allows heterostructure formation without considering the lattice match requirement, thus is a promising method to form 2D/2D and 2D/3D heterojunction. Considering the unique optical properties of CsPbI₃ and transition metal dichalcogenides (TMDCs), their heterostructure present potential applications in both photonics and optoelectronics fields. Here, we demonstrate selective growth of cubic phase CsPbI₃ nanofilm with thickness as thin as 4.0 nm and Zigzag/armchair orientated nanowires (NWs) on monolayer WSe₂. Furthermore, we show growth of CsPbI₃ on both transferred WSe₂ on copper grid and WSe₂ based optoelectrical devices, providing a platform for structure analysis and device performance modification. Transmission electron microscopy (TEM) results reveal the epitaxial nature of cubic CsPbI₃ phase. The revealed growth fundamental of CsPbI₃ is universal valid for other two-dimensional substrates, offering a great advantage to fabricate CsPbI₃ based van der Waals heterostructures (vdWHs). X-ray photoelectron spectroscopy (XPS) and optical characterization confirm the type-II band alignment, resulting in a fast charger transfer process and the occurrence of a broad emission peak with lower energy. The formation of WSe₂/CsPbI₃ heterostructure largely enhance the photocurrent from 2.38 nA to 38.59 nA. These findings are vital for bottom-up epitaxy of inorganic semiconductor on atomic thin 2D substrates for optoelectronic applications.

Keywords van der Waals epitaxy band alignment growth fundamental charge transfer photodetector

Corresponding Author(s): Lin Zhang,Xiaoming Yuan

Issue Date: 24 May 2024

Cite this article:

Chang Lu,Shunhui Zhang,Meili Chen, et al. Van der Waals epitaxy of type-II band alignment CsPbI₃/TMDC heterostructure for optoelectronic applications[J]. Front. Phys. , 2024, 19(5): 53206.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-024-1404-9
https://academic.hep.com.cn/fop/EN/Y2024/V19/I5/53206

Fig.1 Formation of CsPbI₃ nanostructure on monolayer WSe_2. Temperature dependent morphology evolution of CsPbI₃ at growth temperature of (a) 230 °C; (b) 260 °C; (c) 330 °C. (d) AFM image of a CsPbI₃ film. Morphology evolution of CsPbI₃ on monolayer WSe₂ at different precursor weight under the standardized CsPbI₃ film growth condition at 230 °C (e) 50%; (f) 200%; (g) 300%. (h) CsPbI₃ film thickness under different precursor weight. Insets are corresponding EDX mapping of Pb element. (i) Schematic representation of CsPbI₃ NWs on monolayer WSe₂ with different orientations. AFM images of CsPbI₃ NWs along Zigzag (j) and armchair (k) directions. (l) Statistics of CsPbI₃ NW orientation preference along Zigzag and armchair directions. Scale bars are 20 μm in (a?c, e?g), 5 μm in insets (a?c), 5 μm in (k), 2 μm in (d), 10 μm in (h), 1 μm in (j).

Fig.2 Illustration of morphology evolution of CsPbI₃ on WSe₂ monolayer with different growth parameters.

Fig.3 Structure and band alignment of the CsPbI₃/WSe₂ heterostructure. (a) TEM image of a CsPbI₃ NW. (b) corresponding HRTEM image, (c) SAED pattern and (d) EDX elemental mapping (e) EDX spectrum of CsPbI₃ NW. (f) TEM image of CsPbI₃ nanofilm. (g) Corresponding HRTEM image and (h) SAED pattern of CsPbI₃. XPS of (i) W 4f core level and valence band spectra of the WSe₂ substrate. (j) Pb 4f core level and valence band spectra of CsPbI₃ nanostructure. (k) The Pb 4f and W 4f core levels in CsPbI₃/WSe₂ heterostructure. (l) Extracted band alignment in the CsPbI₃/WSe₂ heterostructure.

Fig.4 (a) Raman spectra of monolayer WSe₂ before and after CsPbI₃ growth. (b) PL and TRPL (c) comparison of CsPbI₃/WSe₂ heterojunction, CsPbI₃ and WSe₂. (d) Optical image of a partially removed CsPbI₃ film on WSe₂ together with the corresponding PL mapping at 1.64 eV. (e?g) Temperature-dependent PL spectra of CsPbI₃ nanofilm/WSe₂, Zigzag orientated NW/WSe₂ and armchair orientated NW/WSe₂. (h) Extracted emission energy in (e?g).

Fig.5 Growth demonstration of CsPbI₃ nanofilm and NWs on monolayer WS₂, MoS₂ and MoSe₂ monolayer at standard film growth conditions and NW growth conditions at triple precursor weight. Optical images of CsPbI₃ nanofilms (a, e, i) and NWs (b, f, j) on monolayer TMDCs. Corresponding Raman (c, g, k) and PL (d, h, l) spectra of the as-grown CsPbI₃/ TMDCs heterojunction.

Fig.6 (a, b) Temperature-dependent PL spectra of CsPbI₃/WS₂ heterojunction and monolayer WS₂. (c, d) Temperature-dependent PL spectra of CsPbI₃/MoSe₂ heterojunction and monolayer MoSe₂. (e, f) Extracted peak energy evolution with temperature for CsPbI₃/WS₂ and CsPbI₃/MoSe₂ heterojunction (g) Band alignments of between CsPbI₃ and monolayer TMDC [19]. The arrows point out the possible charge transfer process at the heterojunction.

Fig.7 Dark and photocurrent comparison of the WSe₂ based photodetector before and after CsPbI₃ growth. The inset is optical image of the as-fabricated CsPbI₃/WSe₂ device.

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