Strain-engineered rippling at the bilayer-MoS<sub>2</sub> interface identified by advanced atomic force microscopy

doi:10.1007/s11467-024-1409-4

Front. Phys.

2024, Vol. 19

Issue (6) : 63201 https://doi.org/10.1007/s11467-024-1409-4

Strain-engineered rippling at the bilayer-MoS₂ interface identified by advanced atomic force microscopy

Haoyu Dong^1,², Songyang Li^1,², Shuo Mi^1,², Jianfeng Guo^1,², Zhaxi Suonan^1,², Hanxiang Wu^1,², Yanyan Geng^1,², Manyu Wang^1,², Huiwen Xu^1,², Li Guan³, Fei Pang^1,², Wei Ji^1,², Rui Xu^1,²(

), Zhihai Cheng^1,²(

)

¹. Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
². Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
³. Key Laboratory of Advanced Light Conversion Materials and Biophotonics, Department of Chemistry, Renmin University of China, Beijing 100872, China

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Abstract

The van der Waals interface structures and behaviors are of great importance in determining the physical properties of two-dimensional atomic crystals and their heterostructures. The delicate interfacial properties are sensitively dependent on the mechanical behaviors of atomically thin films under external strain. Here, we investigated the strain-engineered rippling structures at the CVD-grown bilayer-MoS₂ interface with advanced atomic force microscopy (AFM). The in-plane compressive strain is sequentially introduced into the 1L-substrate and 2L-1L interface of bilayer-MoS₂ flakes via a fast-cooling process. The thermal strain-engineered rippling structures were directly visualized at the central 2H- and 3R-MoS₂ bilayer regions with friction force microscopy (FFM) and bimodal AFM techniques. These rippling structures can be further artificially manipulated into the beating-like rippling features and fully erased via the contact mode AFM scanning. Our results shed lights on the strain-engineered interfacial structures of two-dimensional materials and also inspire the further investigation on the interface engineering of their electronic and optical properties.

Keywords rippling interface strain-engineered atomic force microscopy transition metal dichalcogenides

Corresponding Author(s): Rui Xu,Zhihai Cheng

Issue Date: 22 May 2024

Cite this article:

Haoyu Dong,Songyang Li,Shuo Mi, et al. Strain-engineered rippling at the bilayer-MoS₂ interface identified by advanced atomic force microscopy[J]. Front. Phys. , 2024, 19(6): 63201.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-024-1409-4
https://academic.hep.com.cn/fop/EN/Y2024/V19/I6/63201

Fig.1 Growth of triangular monolayer- and bilayer-MoS₂ flakes and the introduction of interfacial strain. (a) Schematic diagram for the CVD growth of MoS₂. (b) The in-plane isotropic compressive strain can be subsequentially applied into the bottom and top MoS₂ layer via the 1L-substatre and 2L−1L interface. (c?e) Optical images of the CVD-grown MoS₂ monolayer (c), 2H-MoS₂ (d) and 3R-MoS₂ (e) bilayer triangular flakes. (f) Schematic formation mechanism for the strain-engineered vein-like MoS₂ monolayer flake, and the 2H- and 3R-MoS₂ bilayer flakes of (c?e).

Fig.2 Schematics of bimodal AFM and FFM. (a) Schematic of FFM mode. PSD, acronym for position-sensitive detector. (b) Scanning directions for FFM and TSM imaging. Here, the direction of scanning is perpendicular (parallel) to the cantilever axis for FFM (TSM) imaging. The FFM friction image is obtained by detecting the lateral torsional signal of PSD in FFM. (c) Schematic experimental setup of bimodal AFM. (d) Resonance frequencies of AFM probe (AC160) at the first and second eigenmode of cantilever. (e) Simplified scheme for the used feedback loops in bimodal AFM.

Fig.3 Strain-engineered ripple structures of the vein-like monolayer and 2H-MoS₂ bilayer flake. (a, b) The AFM topography (a) and corresponding FFM friction (b) images of vein-like MoS₂ monolayer on the SiO₂/Si substrates. (c) The zoom-in image of (b) at the central region. (d) Schematic formation mechanism for the strain-engineered ripple structures in the monolayer flake. (e, f) The AFM topography (e) and corresponding FFM friction (f) images of 2H-MoS₂ bilayer flake on the SiO₂/Si substrates. (g) The zoom-in image of (f) at the central region. (h) Schematic formation mechanism for the strain-engineered triangular 2H-MoS₂ bilayer flake. It is noted that the central top layer of 2H-MoS₂ is under the interfacial compression via the compressive bottom layer. Image size: (a, b) 45 μm; (c) 16 μm. (e, f) 60 μm; (g) 25 μm.

Fig.4 Strain-engineered rippling at the 2H-MoS₂ bilayer interface. (a) The AFM topography images of the top layer at the central region of 2H-MoS₂ bilayer flake in Fig.3(e). The 2H-stacked top layer is indicated by 2H-MoS₂. No strain-induced features can be observed in the topography image. (b?d) The bimodal AFM images (A₂) of the same area of (a) obtained before (b), during (c) and after (d) the repeated contact mode scanning. (e?h) The corresponding zoom-in images of (a?d) at the central area of 2H-toplayer. The strain-induced rippling features are observed within the 2H-toplayer in the bimodal AFM images and can be manipulated by contact mode AFM scanning. (i, j) The corresponding averaged line profiles of rippling features in (f) and (g). (k, l) Schematics of the uniform compressive wave for (i) and the beating-like compressive wave (λ_B = 4λ) for (j). (m, n) Schematics for the contact mode scanning (m) and erasing process (n) of the rippling. Image Sizes: (a?d) 13 μm; (e?h) 4 μm.

Fig.5 Strain-engineered rippling at the 3R-MoS₂ bilayer interface. (a) The FFM friction image of the 3R-MoS₂ bilayer flake. The 3R-stacked top layer is indicated by 3R-MoS₂. (b) The AFM topography image of the central 3R-MoS₂ bilayer region in (a). (c) The corresponding bimodal AFM image (A₂) of (b). (d) Schematic formation mechanism for the strain-engineered triangular 3R-MoS₂ bilayer flake. It is noted that the central top layer of 3R-MoS₂ is under interfacial compression via the compressive bottom layer. (e) The FFM friction image of another 3R-MoS₂ bilayer flake. (f) The AFM topography image of the central 3R-MoS₂ bilayer region in (e). (g) The corresponding bimodal AFM image (A₂) of (f). (h) Averaged line profile of the rippling in (g). (i) Schematic of the beating-like compressive wave (λ_B = 8λ) for (h). Image size: (a) 58 μm; (b, c) 23 μm; (d) 50 μm; (e, f) 11 μm.

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