Key electronic parameters of 2<i>H</i>-stacking bilayer MoS<sub>2</sub> on sapphire substrate determined by terahertz magneto-optical measurement in Faraday geometry

doi:10.1007/s11467-024-1425-4

2024, Vol. 19

Issue (6) : 63204 https://doi.org/10.1007/s11467-024-1425-4

Key electronic parameters of 2H-stacking bilayer MoS₂ on sapphire substrate determined by terahertz magneto-optical measurement in Faraday geometry

Xingjia Cheng^1,², Wen Xu^1,^3,⁴(

), Hua Wen^1,², Jing Zhang^1,², Heng Zhang^1,², Haowen Li⁴, Francois M. Peeters^4,⁵

¹. Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
². University of Science and Technology of China, Hefei 230026, China
³. School of Physics and Astronomy and Yunnan Key Laboratory of Quantum Information of Yunnan Province, Yunnan University, Kunming 650091, China
⁴. Micro Optical Instruments Inc., Shenzhen 518118, China
⁵. Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium

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Abstract

Bilayer (BL) transition metal dichalcogenides (TMDs) are important materials in valleytronics and twistronics. Here we study terahertz (THz) magneto-optical (MO) properties of n-type 2H-stacking BL molybdenum sulfide (MoS₂) on sapphire substrate grown by chemical vapor deposition. The AFM, Raman spectroscopy and photoluminescence are used for characterization of the samples. Applying THz time-domain spectroscopy (TDS), in combination with polarization test and the presence of magnetic field in Faraday geometry, THz MO transmissions through the sample are measured from 0 to 8 T at 80 K. The complex right- and left-handed circular MO conductivities for 2H-stacking BL MoS₂ are obtained. Through fitting the experimental results with theoretical formula of MO conductivities for an electron gas, generalized by us previously through the inclusion of photon-induced electronic backscattering effect, we are able to determine magneto-optically the key electronic parameters of BL MoS₂, such as the electron density $n e$ , the electronic relaxation time $τ$ , the electronic localization factor $c$ and, particularly, the effective electron mass $m ∗$ around $Q$ -point in between the $K$ - and $Γ$ -point in the electronic band structure. The dependence of these parameters upon magnetic field is examined and analyzed. This is a pioneering experimental work to measure $m ∗$ around the $Q$ -point in 2H-stacking BL MoS₂ and the experimental value is very close to that obtained theoretically. We find that $n e / τ / ∣ c ∣ / m ∗$ in 2H-stacking BL MoS₂ decreases/increases/decreases/increases with increasing magnetic field. The results obtained from this study can be benefit to us in gaining an in-depth understanding of the electronic and optoelectronic properties of BL TMD systems.

Keywords bilayer MoS₂ terahertz time-domain spectroscopy magneto-optical conductivities key electronic parameters effective electron mass

Corresponding Author(s): Wen Xu

Issue Date: 17 July 2024

Cite this article:

Xingjia Cheng,Wen Xu,Hua Wen, et al. Key electronic parameters of 2H-stacking bilayer MoS₂ on sapphire substrate determined by terahertz magneto-optical measurement in Faraday geometry[J]. Front. Phys. , 2024, 19(6): 63204.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-024-1425-4
https://academic.hep.com.cn/fop/EN/Y2024/V19/I6/63204

Fig.1 Left panel: Schematic diagram of the THz TDS system for MO transmission measurement of BL MoS

2

on sapphire substrate. Here, the measurement is undertaken in the Faraday geometry where both the incident THz beam, which is linearly polarized, and the magnetic field

B

are applied perpendicularly to the sample surface, and a polarizer is applied to examine the polarization of the transmitted THz beam. Right panel: The electronic band structure of 2H-stacking BL MoS

2

[18], where the inset shows the electronic transition around the Fermi level

E F

in the Q-band in an n-type BL MoS

2

under the action of THz driving. The blue area in the Q-band presents the populated electronic states.

Fig.2 Amplitude and phase angle of

E ± 45 ∘, s a m p l e (ω)

of the THz electric field transmitted through the BL MoS

2

sample as a function of radiation frequency

f = ω / (2 π)

in different magnetic fields as indicated. The results for the phase angles coincide roughly. The inset shows

E ± 45 ∘, s a m p l e (t)

of the THz electric field transmitted through the sample as a function of delay time.

Fig.3 Real

σ 1 ± (ω)

(red dots and curves) and imaginary

σ 2 ± (ω)

(blue dots and curves) parts of RHCP and LHCP MO conductivities for BL MoS

2

as a function of radiation frequency

f = ω / (2 π)

in different magnetic fields as indicated. Here, the results for

σ + (ω)

and

σ − (ω)

are shown respectively in the left and right panels, the dots are experimental results, the curves are obtained from Eq. (7), and

Σ 0 = e 2 / (4 ℏ) = 6.07 × 10 − 5

Fig.4 The electron density

n e

(red), the electronic relaxation time

τ

(black), the effective electron mass

m ∗

(orange, here

m 0

is rest electron mass), and the electronic localization factor

c

(green) of BL MoS

2

as a function of magnetic field. The curves are drawn to guide the eye.

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[1]	Xingjia Cheng, Wen Xu, Hua Wen, Jing Zhang, Heng Zhang, Haowen Li, Francois M. Peeters, Qingqing Chen. Electronic properties of 2H-stacking bilayer MoS₂ measured by terahertz time-domain spectroscopy[J]. Front. Phys. , 2023, 18(5): 53303-.

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