Temperature dependence of positive and negative magnetoresistances of tantalum-covered multiwalled carbon nanotubes

doi:10.1007/s11467-024-1432-5

Front. Phys.

2024, Vol. 19

Issue (6) : 63208 https://doi.org/10.1007/s11467-024-1432-5

Temperature dependence of positive and negative magnetoresistances of tantalum-covered multiwalled carbon nanotubes

Julienne Impundu^1,², Wenxiang Wang^1,², Zheng Wei^1,², Yushi Xu¹, Yu Wang¹, Jiawang You¹, Wenbin Huang³(

), Yong Jun Li^1,²(

), Lianfeng Sun^1,²(

)

¹. CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, Nanofabrication laboratory, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
². University of Chinese Academy of Sciences, Beijing 100049, China
³. Mechanical Engineering Research Institute, Xi’an 710032, China

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Abstract

Carbon nanotubes (CNTs) have garnered significant attention due to their remarkable electronic and magnetic properties. In this research, we introduced multiwalled carbon nanotubes covered with tantalum (MWNTs/Ta) to systematically modulate the magnetoresistive properties of the MWNTs/Ta hybrid nanostructures. We observed distinct changes in both positive and negative magnetoresistances of MWNTs/Ta across a broad temperature range using a physical property measurement system and a four-terminal method. This study on temperature-dependent magnetoresistive behavior of the MWNTs/Ta sheds light on the fundamental properties of carbon-based materials and holds promise for practical applications in the field of spintronic devices.

Keywords multiwalled carbon nanotubes tantalum magnetoresistance temperature dependence physical property measurement system four-terminal method

Corresponding Author(s): Wenbin Huang,Yong Jun Li,Lianfeng Sun

Issue Date: 23 July 2024

Cite this article:

Julienne Impundu,Wenxiang Wang,Zheng Wei, et al. Temperature dependence of positive and negative magnetoresistances of tantalum-covered multiwalled carbon nanotubes[J]. Front. Phys. , 2024, 19(6): 63208.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-024-1432-5
https://academic.hep.com.cn/fop/EN/Y2024/V19/I6/63208

Fig.1 Fabrication of aligned MWNTs covered with tantalum. (a) Aligned MWNTs grown on silicon wafers. (b) A metal mask with a dumbbell is positioned onto MWNTs. (c) The metal tantalum (Ta) is deposited onto the MWNTs using magnetron sputtering. (d) Optical images of MWNTs/Ta bar devices.

Fig.2 Characterization of aligned MWNTs covered with Ta. (a) Optical images of (i) MWNTs/Ta device, (ii) pure Ta device, and (b) the height profile of Ta device. (c) AFM image of aligned MWNTs/Ta. (d) MWNTs/Ta height profile. (e, f) SEM image of pristine MWNTs and aligned MWNTs/Ta. (g, h) The elements distribution of Ta-covered MWNTs.

Fig.3 Bar structures and transport properties of MWNTs/Ta and Ta bar devices. (a) Photograph of MWNTs/Ta bar (left) and Ta bar (right) devices. (b) The schematic drawing of the four-terminal method. (c) I?V characteristics of the devices in (a). (d) Resistance versus temperature of the devices in (a).

Fig.4 Magnetotransport properties for the MWNTs/Ta bar device and the pure Ta bar device were examined as a function of temperature in: (a) x direction, (b) y direction, and (c) z direction.

Fig.5 Magnetoresistance (MR) behavior at different temperatures along different magnetic field directions: (a) x axis, (b) y axis, and (c) z axis of MWNTs/Ta bar device.

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