Correlation, superconductivity and topology in graphene moiré superlattice

doi:10.1007/s11467-023-1302-6

Front. Phys.

2023, Vol. 18

Issue (4) : 43401 https://doi.org/10.1007/s11467-023-1302-6

VIEW & PERSPECTIVE

Correlation, superconductivity and topology in graphene moiré superlattice

Lingxiao Li, Min Wu(

), Xiaobo Lu(

)

International Centre for Quantum Materials, Peking University, Beijing 100871, China

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Abstract

Moiré superlattices created by stacking different pieces of two-dimensional layered materials with a slight lattice mismatch have recently emerged as an exceptional platform for exploring emergent quantum phenomena. In stark contrast to the “parent” materials, the electronic band structures are significantly modified from moiré engineering due to the large-scale periodic moiré potential and interlayer hybridization. In this paper, we mainly focus on the recent progresses achieved in graphene-based moiré systems which have been a condensed-matter playground showing unprecedented abundance of quantum states such as strongly correlated states, superconductivity and novel band topologies.

Keywords twisted graphene moiré superlattices correlation superconductivity topology

Corresponding Author(s): Min Wu,Xiaobo Lu

About author:

^* These authors contributed equally to this work.

Issue Date: 21 June 2023

Cite this article:

Lingxiao Li,Min Wu,Xiaobo Lu. Correlation, superconductivity and topology in graphene moiré superlattice[J]. Front. Phys. , 2023, 18(4): 43401.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-023-1302-6
https://academic.hep.com.cn/fop/EN/Y2023/V18/I4/43401

Fig.1 (a) Schematic of moiré pattern formed by stacking two layers of graphene with twisted angle

θ

[5]. (b) Color plot of schematic density of states (red color denotes high value and blue color denotes low value) in TBG as a function of energy E and twist angle

θ

(left). Density of states as a function of energy E with

θ = 1.05 °

(right) [2]. (c) Moiré pattern of magic-angle TBG measured by scanning tunnelling microscopy (STM) image [6]. (d) Band structures resolved by ARPES for monolayer graphene and TBG. The monolayer graphene displays linear band dispersion with Dirac cone structure (left). By contrast, flat electronic band is formed in TBG (right) [4].

Fig.2 (a) Conductance versus carrier density in magic-angle TBG at 0.3 K [5]. (b) Conductance versus carrier density in magic-angle under different pressure values [12]. (c) Color plot of the longitudinal resistivity as a function of dual gates in ABC-stacked trilayer graphene/h-BN heterostructure [14]. (d) Color plot of the longitudinal resistance as a function of dual gates at 4 K in twisted double bilayer graphene with

θ = 1.28 °

[15]. (e) Evolution of correlated insulator under in-plane magnetic field with

D / ε 0 = ? 0.306 V ? n m ? 1

in twisted double bilayer graphene [15]. (f) Color plot of the longitudinal resistivity as a function of carrier density and displacement field in twisted monolayer-bilayer graphene with

θ = 1.08 °

[16].

Fig.3 (a, b) Superconducting phase diagram in magic-angle TBG, showing correlated state (CS) and superconducting state (SC) [10, 28]. (c) V-shaped tunnelling spectrum is well with the nodal fitting in TBG with

θ = 1.13 °

[32]. (d) Pressure dependent superconducting state in TBG with

θ = 1.27 °

[12]. (e) Color plot of longitudinal resistance against electric displacement field and filling factor in twisted trilayer graphene. Superconducting behavior observed at

2 < | ν | < 3

[36]. (f) Illustration of phase diagram in twisted trilayer graphene. VHS: Van Hove singularity [36]. (g) Measured superconductivity in twisted quadri-, and pentalayer graphene placed on monolayer WSe₂ [27].

Fig.4 (a) Nonlocal resistance measurements to probe the edge state, a characteristic of topological phase [39]. (b) Magnetic field dependent

R x x

and

R x y

observed in magic angle TBG aligned with h-BN at 3/4 filling [41]. Quantized

R x y

with

R x x

approaching to zero provides an unambiguous evidence of quantized anomalous Hall effect. (c) Sign reversals of quantized anomalous Hall effect under small direct currents [41]. (d) Correlated Chern insulators at different filling factors with non-zero magnetic field [48]. (e) Schematic of Chern insulators at different fillings of TBG under magnetic field measured by STM [47]. (f) Schematic band structures showing proposed filling arrangements of different Chern insulators. [48]. (g) Color plot of inverse compressibility versus magnetic field and filling factor. The corresponded Wannier diagram is present in (h) [51].

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