An industrial solution to light-induced degradation of crystalline silicon solar cells

doi:10.1007/s11708-016-0430-x

Frontiers in Energy

2017, Vol. 11

Issue (1): 67-71 https://doi.org/10.1007/s11708-016-0430-x

本期目录

An industrial solution to light-induced degradation of crystalline silicon solar cells

Meng XIE¹,Changrui REN²,Liming FU²,Xiaodong QIU¹,Xuegong YU¹(

),Deren YANG¹

¹. State Key Lab of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
². Changzhou Shichuang Energy Technology Co., Ltd, Liyang 213300, China

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Abstract：

Boron-oxygen defects can cause serious light-induced degradation (LID) of commercial solar cells based on the boron-doped crystalline silicon (c-Si), which are formed under the injection of excess carriers induced either by illumination or applying forward bias. In this contribution, we have demonstrated that the passivation process of boron-oxygen defects can be induced by applying forward bias for a large quantity of solar cells, which is much more economic than light illumination. We have used this strategy to trigger the passivation process of batches of aluminum back surface field (Al-BSF) solar cells and passivated emitter and rear contact (PERC) solar cells. Both kinds of the treated solar cells show high stability in efficiency and suffer from very little LID under further illumination at room temperature. This technology is of significance for the suppression of LID of c-Si solar cells for the industrial manufacture.

Key words： Boron-oxygen defects c-Si solar cells light-induced degradation passivation forward bias

收稿日期: 2016-07-07 出版日期: 2016-11-16

Corresponding Author(s): Xuegong YU

引用本文:

. [J]. Frontiers in Energy, 2017, 11(1): 67-71.
Meng XIE,Changrui REN,Liming FU,Xiaodong QIU,Xuegong YU,Deren YANG. An industrial solution to light-induced degradation of crystalline silicon solar cells. Front. Energy, 2017, 11(1): 67-71.

链接本文:

https://academic.hep.com.cn/fie/CN/10.1007/s11708-016-0430-x
https://academic.hep.com.cn/fie/CN/Y2017/V11/I1/67

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