Defect passivation on cast-mono crystalline screen-printed cells

doi:10.1007/s11708-016-0443-5

Frontiers in Energy

2017, Vol. 11

Issue (1): 60-66 https://doi.org/10.1007/s11708-016-0443-5

本期目录

Defect passivation on cast-mono crystalline screen-printed cells

Alison WENHAM¹(

),Lihui SONG²,Malcolm ABBOTT¹,Iskra ZAFIROVSKA¹,Sisi WANG¹,Brett HALLAM¹,Catherine CHAN¹,Allen BARNETT¹,Stuart WENHAM¹

¹. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052, Australia
². College of Materials & Environmental Engineering, Hangzhou DianZi University, Hangzhou 310018, China

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Abstract：

Cast-mono crystalline silicon wafers contain crystallographic defects, which can severely impact the electrical performance of solar cells. This paper demonstrates that applying hydrogenation processes at moderate temperatures to finished screen print cells can passivate dislocation clusters within the cast-mono crystalline silicon wafers far better than the hydrogenation received during standard commercial firing conditions. Efficiency enhancements of up to 2% absolute are demonstrated on wafers with high dislocation densities. The impact of illumination to manipulate the charge state of hydrogen during annealing is investigated and found to not be significant on the wafers used in this study. This finding is contrary to a previous study on similar wafers that concluded increased H⁻ or H⁰ from laser illumination was responsible for the further passivation of positively charged dangling bonds within the dislocation clusters.

Key words： silicon solar cell dislocation cast-mono laser hydrogen passivation

收稿日期: 2016-08-06 出版日期: 2016-11-16

Corresponding Author(s): Alison WENHAM

引用本文:

. [J]. Frontiers in Energy, 2017, 11(1): 60-66.
Alison WENHAM,Lihui SONG,Malcolm ABBOTT,Iskra ZAFIROVSKA,Sisi WANG,Brett HALLAM,Catherine CHAN,Allen BARNETT,Stuart WENHAM. Defect passivation on cast-mono crystalline screen-printed cells. Front. Energy, 2017, 11(1): 60-66.

链接本文:

https://academic.hep.com.cn/fie/CN/10.1007/s11708-016-0443-5
https://academic.hep.com.cn/fie/CN/Y2017/V11/I1/60

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