能量转换中微/纳米结构的光谱发射率测量技术综述

doi:10.1007/s11708-020-0693-0

Frontiers in Energy

2020, Vol. 14

Issue (3): 482-509 https://doi.org/10.1007/s11708-020-0693-0

综述论文

本期目录

能量转换中微/纳米结构的光谱发射率测量技术综述

SHAN Shiquan¹, CHEN Chuyang², LOUTZENHISER Peter G.², RANJAN Devesh², ZHOU Zhijun³(

), ZHANG（张卓敏） Zhuomin M.²(

)

¹. State Key Laboratory of Clean Energy Utilization, Zhejiang University, Hangzhou 310027, China; George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta GA 30332, USA
². George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta GA 30332, USA
³. State Key Laboratory of Clean Energy Utilization, Zhejiang University, Hangzhou 310027, China

Spectral emittance measurements of micro/nanostructures in energy conversion: a review

Shiquan SHAN¹, Chuyang CHEN², Peter G. LOUTZENHISER², Devesh RANJAN², Zhijun ZHOU³(

), Zhuomin M. ZHANG²(

)

全文: PDF(3342 KB) HTML

摘要:

微米/纳米结构在调节材料的辐射性能中起着关键作用，并且已被应用于高温能量转换系统以提高性能。在各种辐射特性中，光谱发射率对于设计和分析用作辐射吸收器或发射器的材料至关重要。本文概述了使用直接和间接方法的光谱发射率测量技术。此外，还介绍了几种微/纳米结构，并特别强调了为表征高温应用（例如，太阳能转换和热光电设备）中的工程微/纳米结构而开发的发射仪。此外，还总结了不同材料的实验设施和测量结果。此外，还概述了开发用于实际应用的仪器和微/纳米结构表面的未来前景。本文为微观/纳米结构在高温能量转换工程中的应用提供了全面的信息来源。

Abstract：

Micro/nanostructures play a key role in tuning the radiative properties of materials and have been applied to high-temperature energy conversion systems for improved performance. Among the various radiative properties, spectral emittance is of integral importance for the design and analysis of materials that function as radiative absorbers or emitters. This paper presents an overview of the spectral emittance measurement techniques using both the direct and indirect methods. Besides, several micro/nanostructures are also introduced, and a special emphasis is placed on the emissometers developed for characterizing engineered micro/nanostructures in high-temperature applications (e.g., solar energy conversion and thermophotovoltaic devices). In addition, both experimental facilities and measured results for different materials are summarized. Furthermore, future prospects in developing instrumentation and micro/nanostructured surfaces for practical applications are also outlined. This paper provides a comprehensive source of information for the application of micro/nanostructures in high-temperature energy conversion engineering.

Key words： concentrating solar power (CSP) emittance measurements high temperature micro/nanostructure selective absorber selective emitter thermophotovoltaics (TPV)

收稿日期: 2020-03-19 出版日期: 2020-09-14

通讯作者: ZHOU Zhijun,ZHANG（张卓敏） Zhuomin M. E-mail: zhouzj@zju.edu.cn;zhuomin.zhang@me.gatech.edu

Corresponding Author(s): Zhijun ZHOU,Zhuomin M. ZHANG

引用本文:

SHAN Shiquan, CHEN Chuyang, LOUTZENHISER Peter G., RANJAN Devesh, ZHOU Zhijun, ZHANG（张卓敏） Zhuomin M.. 能量转换中微/纳米结构的光谱发射率测量技术综述[J]. Frontiers in Energy, 2020, 14(3): 482-509.
Shiquan SHAN, Chuyang CHEN, Peter G. LOUTZENHISER, Devesh RANJAN, Zhijun ZHOU, Zhuomin M. ZHANG. Spectral emittance measurements of micro/nanostructures in energy conversion: a review. Front. Energy, 2020, 14(3): 482-509.

链接本文:

https://academic.hep.com.cn/fie/CN/10.1007/s11708-020-0693-0
https://academic.hep.com.cn/fie/CN/Y2020/V14/I3/482

Fig.1

Fig.2

Fig.3

Fig.4

Fig.5

Fig.6

Detecting instrument	Wavelength/μm	Temperature/K	Directionality	Heating method	Organization	References
FTIR	4–40	353 to 673	Directional (5° to 70°) and hemispherical	Electrical heater	PTB (No. 1, Germany)	[²²,⁴⁷]
FTIR	1–1000	273 to 703	Directional (0° to 70°) and hemispherical	Bifilarly wound wire heater	PTB (No. 2, Germany)	[²³,⁴⁸]
FTIR	1–20	600 to 1400	Directional (0° to 75°)	Cs and Na heat-pipe heater	NIST (USA)	[²⁴,⁴⁹]
FTIR	2–19	Up to 1000	Directional (0° to 60°)	Electrical coil heater	Georgia Institute of Technology (USA)	[²⁵,⁵⁰]
FTIR	2.5–20	500 to 1200	Normal, 45° and 70°, and hemispherical	Electric heating	CNR-INO National Institute of Optics (Italy)	[²⁶]
FTIR	1.3–25	Ambient to 1050	Directional (0° to 80°)	Electrical coil heater	Universidad of the Basque Country (Spain)	[²⁷]
Monochromator (thermal detector)	0.8–2.2	473 to 1273	Normal	Cast iron plate heater	Henan Normal University (China)	[³⁹]
FTIR	1.3–29	Up to 1400	Directional (0° to 60°)	Ceramic heater	Harbin Institute of Technology (China)	[⁴³]
FTIR	2–25	1073 to 1873	Normal	Flame torch/ tubular furnace	Nanjing University of Science and Technology (China)	[⁴⁴]
Monochromator (photon detector)	2–15	473 to 1003	Directional (N/A)	Electrical coil heater	National Institute of Metrology (China)	[⁵¹]
Spectroradiometer	0.6–40	1300 to 2500	Directional (0° to 80°)	Solar furnace	PROMES-CNRS (France)	[⁵²]
FTIR	8–14	173 to 213	Normal	Refrigerator (cooling)	Chinese Academy of Sciences (China)	[⁵³]
FTIR	1.4–26	550 to 1250	Normal	Laser heating	University of West Bohemia (Czech Republic)	[⁵⁴,⁵⁵]
FTIR	5–25	325 to 405	Normal	Solar-like halogen lamp	Brown University (USA)	[⁵⁶]
FTIR	2–9	Up to 973	Normal	Electrical heater	University of Wisconsin-Madison (USA)	[⁵⁷]
FTIR	0.7–29	773 to 1273	Normal	Blackbody radiator	Ruhr-University Bochum (Germany)	[⁵⁸,⁵⁹]
FTIR	0.8–8	1000 to 1700	Normal	Oxygen-gas flame	Tohoku University (Japan)	[⁶³,⁶⁴]
FTIR	1.5–20	Up to 2226	Normal	Oxy/acetylene torch	Advanced Fuel Research Inc. (USA)	[⁶⁷]
FTIR	5–12	253 to 373	Normal	Circulating fluid	National Research Laboratory of Metrology (Japan)	[⁶⁸]
FTIR	1.6–22	373 to 1673	Normal	Tantalum wire heater	Tokai University (Japan)	[⁶⁹]
FTIR	2.5–25	323 to 773	Directional (0° to 50°)	Electrical heater	Korea Research Institute of Standards and Science (South Korea)	[⁷⁰]
FTIR	0.6–15	773 to 1623	Normal	Electrical heater	Bundeswehr University of Munich (Germany)	[⁷¹]
FTIR	1–25	373 to 1473	Normal	Electrical heater	University of Duisburg-Essen (Germany)	[⁷²]

Tab.1

Fig.7

Fig.8

Fig.9

Fig.10

Fig.11

Fig.12

Tab.2

Fig.13

Fig.14

Structure	Materials	Method and instrument	Directionality	Wavelength /μm	Temperature /K	Maximum normal emittance (wavelength location)	References
Periodic grating	Micro-grooved Si	Direct (spectrometer)	Directional (0° to 80°)	2–14	573 and 673	About 0.9 (3 μm)	[⁶¹]
Periodic grating	Tungsten 2D grating	Direct (FTIR)	Directional (0° and 30°)	1.0–5.0	1200	0.7 (1.6 μm)	[¹⁰⁵]
Periodic grating	SiC 1D grating	Direct (FTIR)	Normal	9.5–13	773	0.9 (11.1 μm)	[¹⁰⁶]
Microcavity	Pt-coated Si reverse-pyramid cavities	Direct (FTIR)	Normal	0.8–5	890	0.8 (1.6 μm)	[⁶³]
Microcavity	Ti-coated Si rectangular cavities	Direct (spectrometer)	Normal	1–5	1073	0.8 (3.2 μm)	[⁶⁵]
Microcavity	Ni rectangular cavities	Direct (spectrometer)	Normal	0.7–4	1000	0.95 (0.87 μm)	[⁶⁶]
Microcavity	Cr-coated Si rectangular cavities	Direct (FTIR)	Directional (0° to 15°)	3–25	750	About 0.6 (6–10 μm)	[¹⁰⁷]
Microcavity	W rectangular cavities	Direct (FTIR)	Normal	0.6–4	Up to 1400	0.8 (1.25 μm)	[¹⁰⁸,¹⁰⁹]
Microcavity	Perovskite-type manganese thermochromic materials	Indirect (FTIR)	Near-normal	1.25–25.5	173 to 373	0.95 (4 μm)	[¹¹¹]
Microcavity	Ag-coated Si microcavities	Indirect (FTIR)	Near-normal	3.6–25	Room temperature	Near unity (8.87 μm, 5.63 μm, and 3.89 μm)	[¹¹²]
Microcavity	LSMO-coated silicon microcavity	Indirect (FTIR)	Near-normal	2.5–25	97 to 373	Near unity (6.5 μm)	[¹¹³]
Multilayer	Fabry-Perot cavity resonator	Direct (FTIR)	Directional (0° to 30°)	2–20	294, 600, and 800	About 0.8 (4.5 μm, 2.27 μm)	[²⁵]
Metamaterial	Au-grating/SiO₂/Au on Si substrate	Direct (FTIR)	Directional (0° to 30°)	3.33–10	700 and 750	0.8 (7.69 μm), 0.6 (4.17 μm)	[⁵⁰]
Metamaterial	SiC metasurfaces (2D-grooved)	Indirect (FTIR+ microscope)	Near-normal	8–13	Room temperature	0.8 (12 μm)	[⁷⁸]
Metamaterial	Pt-pattern/Al₂O₃/Pt on sapphire substrate	Indirect (FTIR+ microscope)	Near-normal	0.8–3.5	Room temperature	Near unity (1.5 μm)	[¹¹⁴]
1D PhC	SiO₂/Si₃N₄ 1D-PhC on Ag	Indirect (FTIR)	Directional (0°–80°)	0.85–1.1	Room temperature	0.6 (0.975 μm)	[¹¹⁷,¹¹⁸]
2D PhC	W cylindrical hole array	Indirect (FTIR)	Near-normal	1–3	Room temperature	Near unity (1.5 μm)	[⁸⁷]
2D PhC	Ta cylindrical hole array	Indirect (FTIR)	Near-normal	1.4–3	Room temperature	Near unity (1.9 μm)	[⁸⁸]
2D PhC	HfO₂-coated Ta cylindrical hole array	Indirect (FTIR)	Near-normal	0.3–3	Room temperature	Near unity (1.9 μm)	[⁹⁹]
2D PhC	Ta-W alloy cylindrical hole array	Indirect (FTIR)	Near-normal	1.4–3	Room temperature	Near unity (2 μm)	[¹¹⁵,¹¹⁶]
3D PhC	Ni woodpile structure	Direct (FTIR)	Normal	2–14	600, 700 and 800	0.65 (3 μm)	[¹²⁰]
3D PhC	Pt-coated silicon scaffold	Direct (FTIR)	Directional (0° to 75°)	1.8–10.2	889 and 939	Near unity (2.5 μm)	[122]

Tab.3

Fig.15

Fig.16

Fig.17

C_f	Solar concentration factor
C₁	First radiation constant
C₂	Second radiation constant
E	Emissive power/(W?m⁻²)
E_λ	Spectral emissive power/(W?m⁻²?mm⁻¹)
G₀	Total solar irradiance/(W?m⁻²)
G_λ	Spectral solar irradiance/(W?m⁻²?mm⁻¹)
I	Radiation intensity/(W?m⁻²?sr⁻¹)
I_λ	Spectral intensity/(W?m⁻²?sr⁻¹?mm⁻¹)
T	Temperature/K
Greek symbols
α	Absorptance
ε	Emittance
η	Efficiency
θ	Zenith angle/(°)
$Λ$	Period of nanostructure/μm
λ	Wavelength/μm
ρ	Reflectance
σ	Stefen-Boltzmann constant
ψ	Azimuthal angle
Subscript
a	Absorber
b	Blackbody
θ	Directional
λ	Spectral
Abbreviation
CSP	Concentrating solar power
EQE	External quantum efficiency
FTIR	Fourier-transform infrared (spectrometer)
PhC	Photonic crystal
PV	Photovoltaic
TPV	Thermophotovoltaic(s)

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