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Frontiers of Information Technology & Electronic Engineering

ISSN 2095-9184

Frontiers of Information Technology & Electronic Engineering  2018, Vol. 19 Issue (2): 192-205   https://doi.org/10.1631/FITEE.1601477
  本期目录
基于非易失存储器的版本化进程细粒度容错
张文喆, 卢凯(), 王小平
国防科技大学计算机学院分布与并行重点实验室,中国长沙市,410073
Versionized process based on non-volatile random-access memory for fine-grained fault tolerance
Wen-zhe ZHANG, Kai LU(), Xiao-ping WANG
Science and Technology on Parallel and Distributed Processing Laboratory, College of Computer, National University of Defense Technology, Changsha 410073, China
 全文: PDF(594 KB)  
摘要:

新型非易失存储器(NVRAM)提供的字节粒度持久且非易失新特性,将有力支持新型容错技术的设计。提出一个基于NVRAM的新型容错进程模型——版本化进程(versionized process,VerP)。该进程模型通过在传统软硬件之间引入一个软件中间层,将软硬件解耦合,在NVRAM上重新组织进程所有数据,从而支持进程在NVRAM的天然容错。进一步,赋予进程中每个数据一个版本号,通过更新版本号实现进程非易失数据的一致性更新。与传统检查点机制相比,VerP可高效支持细粒度容错。

Abstract

Non-volatile random-access memory (NVRAM) technology is maturing rapidly and its byte-persistence feature allows the design of new and efficient fault tolerance mechanisms. In this paper we propose the versionized process (VerP), a new process model based on NVRAM that is natively non-volatile and fault tolerant. We introduce an intermediate software layer that allows us to run a process directly on NVRAM and to put all the process states into NVRAM, and then propose a mechanism to versionize all the process data. Each piece of the process data is given a special version number, which increases with the modification of that piece of data. The version number can effectively help us trace the modification of any data and recover it to a consistent state after a system crash. Compared with traditional checkpoint methods, our work can achieve fine-grained fault tolerance at very little cost.

Key wordsNon-volatile memory    Byte-persistence    Versionized process    Version number
收稿日期: 2016-08-16      出版日期: 2018-04-23
通讯作者: 卢凯     E-mail: lukainudt@163.com
Corresponding Author(s): Kai LU   
 引用本文:   
张文喆, 卢凯, 王小平. 基于非易失存储器的版本化进程细粒度容错[J]. Frontiers of Information Technology & Electronic Engineering, 2018, 19(2): 192-205.
Wen-zhe ZHANG, Kai LU, Xiao-ping WANG. Versionized process based on non-volatile random-access memory for fine-grained fault tolerance. Front. Inform. Technol. Electron. Eng, 2018, 19(2): 192-205.
 链接本文:  
https://academic.hep.com.cn/fitee/CN/10.1631/FITEE.1601477
https://academic.hep.com.cn/fitee/CN/Y2018/V19/I2/192
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