Crystallographic orientation effect on cutting-based single atomic layer removal
Wenkun XIE1, Fengzhou FANG1,2()
1. Centre of Micro/Nano Manufacturing Technology (MNMT-Dublin), University College Dublin, Dublin 4, Ireland 2. State Key Laboratory of Precision Measuring Technology and Instruments, Centre of Micro/Nano Manufacturing Technology (MNMT), Tianjin University, Tianjin 300072, China
The ever-increasing requirements for the scalable manufacturing of atomic-scale devices emphasize the significance of developing atomic-scale manufacturing technology. The mechanism of a single atomic layer removal in cutting is the key basic theoretical foundation for atomic-scale mechanical cutting. Material anisotropy is among the key decisive factors that could not be neglected in cutting at such a scale. In the present study, the crystallographic orientation effect on the cutting-based single atomic layer removal of monocrystalline copper is investigated by molecular dynamics simulation. When undeformed chip thickness is in the atomic scale, two kinds of single atomic layer removal mechanisms exist in cutting-based single atomic layer removal, namely, dislocation motion and extrusion, due to the differing atomic structures on different crystallographic planes. On close-packed crystallographic plane, the material removal is dominated by the shear stress-driven dislocation motion, whereas on non-close packed crystallographic planes, extrusion-dominated material removal dominates. To obtain an atomic, defect-free processed surface, the cutting needs to be conducted on the close-packed crystallographic planes of monocrystalline copper.
Single atomic layer and at most several atomic layers
<= 1 nm
<1 nm
Atomic
R<10–20 nm
Nanocutting
At least several atomic layers
1–100 nm [11]
1–100 nm
Nanometric
R>= 10–20 nm
Microcutting
1–10 μm
1–999 μm
<100 nm Ra
Ultra-precision cutting
0.10–10 μm
1 mm and above
Typically<20 nm Ra
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