1. Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian 116024, China 2. CIMS Institute, School of Mechanical Engineering, Hefei University of Technology, Hefei 230009, China
Taping is often used to protect patterned wafers and reduce fragmentation during backgrinding of silicon wafers. Grinding experiments using coarse and fine resin-bond diamond grinding wheels were performed on silicon wafers with tapes of different thicknesses to investigate the effects of taping on peak-to-valley (PV), surface roughness, and subsurface damage of silicon wafers after grinding. Results showed that taping in backgrinding could provide effective protection for ground wafers from breakage. However, the PV value, surface roughness, and subsurface damage of silicon wafers with taping deteriorated compared with those without taping although the deterioration extents were very limited. The PV value of silicon wafers with taping decreased with increasing mesh size of the grinding wheel and the final thickness. The surface roughness and subsurface damage of silicon wafers with taping decreased with increasing mesh size of grinding wheel but was not affected by removal thickness. We hope the experimental finding could help fully understand the role of taping in backgrinding.
Thicknesses of the silicon wafer in different grinding steps
ht
Tape thickness
L
Contact arc length of the main cutting edge of silicon wafer with taping
L0
Contact arc length of the main cutting edge of silicon wafer without taping
Lw
Mean circumference of the grain volume ratio in the wheel
ns
Rotating speed of wheel
nw
Rotating speed of wafer
qv
Coolant flow
r1
Radial distance of workpiece
R
Grain radius
Re
Equivalent radius of grain
s(x, y)
Measured shape of wafer at point (x, y)
t
Depth of grain feed
t0
Actual removal depth of the silicon wafer
Tm
Spark-out time
w(x, y)
True shape of wafer at point (x, y)
W
Width of wheel segment
θ
Angle of actual cutting
ε
Strain of tape
σ
Stress of tape
β
Shadowing factor
1
U Teicher, W Dietz, A Nestler, et al.. Development of a process data-based strategy for conditioning position-controlled ID cut-off grinding wheels in silicon wafer manufacturing. Procedia Manufacturing, 2017, 11: 1984–1991 https://doi.org/10.1016/j.promfg.2017.07.349
2
M Mosavat, A Rahimi, M J Eshraghi, et al.. Nano-finishing of the monocrystalline silicon wafer using magnetic abrasive finishing process. Applied Optics, 2019, 58(13): 3447–3453 https://doi.org/10.1364/AO.58.003447
3
B Jiang, Y Chen, A Fang, et al.. Surface stress evolution in through silicon via wafer during a backside thinning process. IEEE Transactions on Semiconductor Manufacturing, 2019, 32(4): 589–595 https://doi.org/10.1109/TSM.2019.2937004
4
H Tu. Behavior of impurities, defects and surface morphology for silicon and silicon based semiconducting materials. Engineering Science, 2000, 2(1): 7–17 (in Chinese) https://doi.org/10.3969/j.issn.1009-1742.2000.01.002
K Li, Q Guo, M Liu, et al.. A study on pore-forming agent in the resin bond diamond wheel used for silicon wafer back-grinding. Procedia Engineering, 2012, 36: 322–328 https://doi.org/10.1016/j.proeng.2012.03.047
7
Rusnaldy, T J Ko, H S Kim. An experimental study on microcutting of silicon using a micromilling machine. International Journal of Advanced Manufacturing Technology, 2008, 39(1–2): 85–91 https://doi.org/10.1007/s00170-007-1211-9
8
L Zhang, P Chen, T An, et al.. Analytical prediction for depth of subsurface damage in silicon wafer due to self-rotating grinding process. Current Applied Physics, 2019, 19(5): 570–581 https://doi.org/10.1016/j.cap.2019.02.015
9
J Li, Q Fang, L Zhang, et al.. Subsurface damage mechanism of high speed grinding process in single crystal silicon revealed by atomistic simulations. Applied Surface Science, 2015, 324: 464–474 https://doi.org/10.1016/j.apsusc.2014.10.149
10
J Sun, F Qin, P Chen, et al.. A predictive model of grinding force in silicon wafer self-rotating grinding. International Journal of Machine Tools and Manufacture, 2016, 109: 74–86 https://doi.org/10.1016/j.ijmachtools.2016.07.009
11
B Lin, P Zhou, Z Wang, et al.. Analytical elastic–plastic cutting model for predicting grain depth-of-cut in ultrafine grinding of silicon wafer. Journal of Manufacturing Science and Engineering, 2018, 140(12): 121001–121007 https://doi.org/10.1115/1.4041245
12
S Gao, R Kang, Z Dong, et al.. Edge chipping of silicon wafers in diamond grinding. International Journal of Machine Tools and Manufacture, 2013, 64: 31–37 https://doi.org/10.1016/j.ijmachtools.2012.08.002
13
J Chen, I D Wolf. Study of damage and stress induced by backgrinding in Si wafers. Semiconductor Science and Technology, 2003, 18(4): 261–268 https://doi.org/10.1088/0268-1242/18/4/311
14
S Ozturk, L Aydin, N Kucukdogan, et al.. Optimization of lapping processes of silicon wafer for photovoltaic applications. Solar Energy, 2018, 164: 1–11 https://doi.org/10.1016/j.solener.2018.02.039
D Mu, J Liu, Y Cao, et al.. The study on silicon grinding technology. Electronics and Packaging, 2010, 10: 9–13 (in Chinese)
17
Z Pei, S Kassir, M Bhagavat, et al.. An experimental investigation into soft-pad grinding of wire-sawn silicon wafers. International Journal of Machine Tools and Manufacture, 2004, 44(2–3): 299–306 https://doi.org/10.1016/j.ijmachtools.2003.09.006
18
H Liu, Z Dong, H Huang, et al.. A new method for measuring the flatness of large and thin silicon substrates using a liquid immersion technique. Measurement Science & Technology, 2015, 26(11): 115008–115017 https://doi.org/10.1088/0957-0233/26/11/115008
19
X Zhu, X Chen, H Liu, et al.. An empirical equation for prediction of silicon wafer deformation. Materials Research Express, 2017, 4(6): 065904–065915 https://doi.org/10.1088/2053-1591/aa71ed
20
H Liu, Z Dong, K Kang, et al.. Analysis of factors affecting gravity-induced deflection for large and thin wafers in flatness measurement using three-point-support. Metrology and Measurement Systems, 2015, 22(4): 531–546 https://doi.org/10.1515/mms-2015-0052
21
H Liu, X Zhu, R Kang, et al.. Three-point-support method based on position determination of supports and wafers to eliminate gravity-induced deflection of wafers. Precision Engineering, 2016, 46: 339–348 https://doi.org/10.1016/j.precisioneng.2016.06.003
S Agarwal, P V Rao. Modeling and prediction of surface roughness in ceramic grinding. International Journal of Advanced Manufacturing Technology, 2010, 50(12): 1065–1076 https://doi.org/10.1016/j.ijmachtools.2010.08.009
24
J Sun, P Chen, F Qin, et al.. Modelling and experimental study of roughness in silicon wafer self-rotating grinding. Precision Engineering, 2018, 51: 625–637 https://doi.org/10.1016/j.precisioneng.2017.11.003
25
X Chen, W B Rowe. Analysis and simulation of the grinding process. Part II: Mechanics of grinding. International Journal of Machine Tools and Manufacture, 1996, 36(8): 883–896 https://doi.org/10.1016/0890-6955(96)00117-4
26
A Malyarenko, M Ostoja-Starzewski. A random field formulation of Hooke’s Law in all elasticity classes. Journal of Elasticity, 2017, 127(2): 269–302 https://doi.org/10.1007/s10659-016-9613-2
27
S Gao, R K Kang, D M Guo, et al.. Study on the subsurface damage distribution of the silicon wafer ground by diamond wheel. Advanced Materials Research, 2010, 126‒128: 113–118 https://doi.org/10.4028/www.scientific.net/AMR.126-128.113
28
H K Tönshoff, W Schmieden, I Inasaki, et al.. Abrasive machining of silicon. CIRP Annals-Manufacturing Technology, 1990, 39(2): 621–635 https://doi.org/10.1016/S0007-8506(07)62999-0
29
E Brinksmeier, Y Mutlugünes, F Klocke, et al.. Ultra-precision grinding. CIRP Annals-Manufacturing Technology, 2010, 59(2): 652–671 https://doi.org/10.1016/j.cirp.2010.05.001
30
S Malkin, C Guo. Grinding Technology: Theory and Applications of Machining With Abrasives. 2nd ed. New York: Industrial Press, 2008
