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Frontiers of Mechanical Engineering

ISSN 2095-0233

ISSN 2095-0241(Online)

CN 11-5984/TH

邮发代号 80-975

2019 Impact Factor: 2.448

Frontiers of Mechanical Engineering  2023, Vol. 18 Issue (2): 31   https://doi.org/10.1007/s11465-023-0747-1
  本期目录
A bionic approach for the mechanical and electrical decoupling of an MEMS capacitive sensor in ultralow force measurement
Wendi GAO1,2,3,4, Bian TIAN1,2, Cunlang LIU1, Yingbiao MI1, Chen JIA1,2(), Libo ZHAO1,2(), Tao LIU1, Nan ZHU1, Ping YANG1,2, Qijing LIN1,2, Zhuangde JIANG1,2, Dong SUN1,5
1. State Key Laboratory for Manufacturing Systems Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Overseas Expertise Introduction Center for Micro/Nano Manufacturing and Nano Measurement Technologies Discipline Innovation, Xi’an Jiaotong University (Yantai) Research Institute for Intelligent Sensing Technology and System, School of Mechanical Engineering, Xi’an Jiaotong University, Xi’an 710049, China
2. Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing, Yantai 265599, China
3. State Key Laboratory of Robotics and Systems (HIT), Harbin 150006, China
4. Beijing Advanced Innovation Center for Intelligent Robots and Systems, Beijing Institute of Technology, Beijing 100081, China
5. Department of Biomedical Engineering, City University of Hong Kong, Hong Kong, China
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Abstract

Capacitive sensors are efficient tools for biophysical force measurement, which is essential for the exploration of cellular behavior. However, attention has been rarely given on the influences of external mechanical and internal electrical interferences on capacitive sensors. In this work, a bionic swallow structure design norm was developed for mechanical decoupling, and the influences of structural parameters on mechanical behavior were fully analyzed and optimized. A bionic feather comb distribution strategy and a portable readout circuit were proposed for eliminating electrostatic interferences. Electrostatic instability was evaluated, and electrostatic decoupling performance was verified on the basis of a novel measurement method utilizing four complementary comb arrays and application-specific integrated circuit readouts. An electrostatic pulling experiment showed that the bionic swallow structure hardly moved by 0.770 nm, and the measurement error was less than 0.009% for the area-variant sensor and 1.118% for the gap-variant sensor, which can be easily compensated in readouts. The proposed sensor also exhibited high resistance against electrostatic rotation, and the resulting measurement error dropped below 0.751%. The rotation interferences were less than 0.330 nm and (1.829 × 10−7)°, which were 35 times smaller than those of the traditional differential one. Based on the proposed bionic decoupling method, the fabricated sensor exhibited overwhelming capacitive sensitivity values of 7.078 and 1.473 pF/µm for gap-variant and area-variant devices, respectively, which were the highest among the current devices. High immunity to mechanical disturbances was maintained simultaneously, i.e., less than 0.369% and 0.058% of the sensor outputs for the gap-variant and area-variant devices, respectively, indicating its great performance improvements over existing devices and feasibility in ultralow biomedical force measurement.

Key wordsmicro-electro-mechanical system capacitive sensor    bionics    operation instability    mechanical and electrical decoupling    biomedical force measurement
收稿日期: 2022-07-15      出版日期: 2023-07-12
Corresponding Author(s): Chen JIA,Libo ZHAO   
 引用本文:   
. [J]. Frontiers of Mechanical Engineering, 2023, 18(2): 31.
Wendi GAO, Bian TIAN, Cunlang LIU, Yingbiao MI, Chen JIA, Libo ZHAO, Tao LIU, Nan ZHU, Ping YANG, Qijing LIN, Zhuangde JIANG, Dong SUN. A bionic approach for the mechanical and electrical decoupling of an MEMS capacitive sensor in ultralow force measurement. Front. Mech. Eng., 2023, 18(2): 31.
 链接本文:  
https://academic.hep.com.cn/fme/CN/10.1007/s11465-023-0747-1
https://academic.hep.com.cn/fme/CN/Y2023/V18/I2/31
Fig.1  
Fig.2  
ParametersValue
Length of the supporting beams, Lb600 μm
Width of the supporting beams, Wb5 μm
Thickness of the supporting beams, Tb50 μm
Length of the beak probe, Lbeak2000 μm
Length of the swallow head region, Lhead1500 μm
Length of the swallow wing region, Lwing5000 μm
Length of the swallow body region, Lbody3500 μm
Air gap of the tri-plate combs, dg1, dg23 μm, 15 μm
Air gap of the area-variant combs, da03 μm
Overlapped length of the combs, Lco375 μm a), 10 μm b)
Thickness of the combs, Tc50 μm
Tab.1  
Fig.3  
Fig.4  
Fig.5  
Fig.6  
Fig.7  
Fig.8  
Fig.9  
Fig.10  
Fig.11  
Fig.12  
Fig.13  
Fig.14  
ParameterValue
Efficient air gap of the combs, dg13.90 μm
Initial misalignment, y00.15 μm
Overlapped length of the combs, Lco375 μm
Thickness of the combs, Tc50 μm
Number of the combs, Ng330
Stiffness along the y axis, ky25.38 N/m
Tab.2  
Fig.15  
Fig.16  
Fig.17  
Fig.18  
Fig.19  
Fig.20  
Fig.21  
Fig.22  
Fig.23  
Previous worksCapacitive sensitivity /(pF·μm?1)LinearityElectrostatic pulling*/%Electrostatic rotation*/%Mechanical crosstalk/%
Area-variant [23]0.2420.9997NYNa
Gap-variant [24]2.5810.9800YYNa
Gap-variant [30]0.001NaYY3.226 (vertical)
Area-variant [31]0.5950.9700NY8.116 (planar); 1.926 (vertical)
Bionic area-variant (this work)1.4730.99980.0090.7510.013 (planar); 0.058 (vertical)
Bionic gap-variant (this work)7.0780.99961.1180.7510.012 (planar); 0.369 (vertical)
Tab.3  
Abbreviations
AFMAtomic force microscope
ASICApplication-specific integrated circuit
CCDCharge coupled device
GUIGraphical user interface
MEMSMicro-electro-mechanical system
PCBPrint circuit board
PMMAPolymethyl methacrylate
SOISilicon-on-insulator
Variables
cDamping of the swallow structure
COverlapped area of the comb capacitor
CC1, CC2, CC3, CC4Complementary comb arrays
Cd1, Cd2Frequency decoupling capacitors of the bias-scaling circuit
Cin+, Cin?Inputs of the ASIC chip
CN1, CN2, CN3Negative sensing arrays
CP1, CP2, CP3Positive sensing arrays
dGap of the combs
da0Initial gap of the area-variant combs
dg1, dg2Air gap of the gap-variant combs
ΔdStep size of the manipulation stage movements
D1, D2, D3Distances between six supporting beams and the structure center
EYoung’s modulus of the movable structure
EegMeasurement error from the electrostatic force of gap-variant device
F0yi, F0zi (i = 1,2,…,6)Reaction forces along the y and z axis at the fixed end of supporting beams, respectively
FeGeneral pulling electrostatic force of comb arrays
Fea, FegPulling electrostatic forces of the area- and gap-variant comb arrays, respectively
Fx, Fy, FzLoading forces along the x, y, and z axis at the beak tip, respectively
FzEquivalent force along the z axis at the structure center
Iy, IzMoment inertia around the y and z axis of the beam lateral section, respectively
kyStiffness of the swallow structure
LbLength of the supporting beam
Lbody, LbeakLengths of the swallow body region and beak probe, respectively
LcLength of the comb plate
LcoOverlapped length of the combs
Lhead, Ltail, LwingLengths of the swallow head region, tail region, and wing region, respectively
LoffOffset distance between the structure center and front frame of the head region
Line_1Sampling line along the swallow body
Line_2Sampling line along the inside frames of the swallow wing
Line_3Sampling line along the outside frames of the swallow wing
mMass of the swallow structure
M0y, M0zReaction moments around the y and z axis at the fixed end of supporting beams, respectively
MePlanar electrostatic moment of comb arrays
MxMoment around the x axis derived from Fz
Na, NgNumbers of the area- and gap-variant combs, respectively
PADCi (i = 1,2,…,4)Comb pads of the complementary sensing arrays
PADNi (i = 1,2,3)Comb pads of the negative sensing arrays
PADPi (i = 1,2,3)Comb pads of the positive sensing arrays
PADEXCExcitation pad
rStiffness ratio
RScaling factor of the bias-scaling circuit
R1, R2Scaling resistors of the bias-scaling circuit
ScCapacitive sensitivity of the complementary comb arrays
TbThickness of the supporting beam
TcThickness of the combs
VaApplied voltage bias between the combs
VapiCritical voltage applied to the gap-variant combs
VccPower supply of the ASIC chip
VdcDC bias applied to the combs
VEXCScaled excitation voltages of the ASIC chip
VEXCA, VEXCBExcitation voltages of the ASIC chip
wEElastic deformation along the z axis derived from Fz
wFzTranslation bending deformation along the z axis derived from Fz
wMxRotation bending deformation along the z axis derived from Mx
wxBending deformation along the x axis
wyBending deformation along the y axis
w˙yFirst order derivative of wy
w¨ySecond order derivative of wy
wzBending deformation along the z axis
WbWidth of the supporting beams
Wbody, Wis, WwingWidths of the swallow body region, island region, and wing region, respectively
y0Initial misalignment of the asymmetrical gap-variant combs
εDielectric permittivity in air
δyBending angle along the y axis
  
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