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Frontiers of Optoelectronics

ISSN 2095-2759

ISSN 2095-2767(Online)

CN 10-1029/TN

邮发代号 80-976

Frontiers of Optoelectronics  2021, Vol. 14 Issue (4): 450-458   https://doi.org/10.1007/s12200-020-1024-0
  本期目录
Recent progress in the research on using CuSbS2 and its derivative CuPbSbS3 as absorbers in case of photovoltaic devices
Muyi ZHANG1,2, Chong WANG1, Chao CHEN1(), Jiang TANG1,2,3
1. Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
2. China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan 430074, China
3. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
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Abstract

Thin-film solar cells show considerable application potential as alternative photovoltaic technologies. Cuprous antimony chalcogen materials and their derivatives, represented as CuSbS2 and CuPbSbS3, respectively, exhibit the advantages of low cost, massive elemental abundance, stability, and good photoelectric properties, including a suitable bandgap and large optical absorption coefficient. These advantages demonstrate that they can be used as light absorbers in photovoltaic applications. In this study, we review the major properties, fabrication methods, and recent progress of the performance of the devices containing CuSbS2 and CuPbSbS3. Furthermore, the limitations and future development prospects with respect to the CuSbS2 and CuPbSbS3 solar cells are discussed.

Key wordsCuSbS2    CuPbSbS3    properties    fabrication    performance
收稿日期: 2020-03-22      出版日期: 2021-12-06
Corresponding Author(s): Chao CHEN   
 引用本文:   
. [J]. Frontiers of Optoelectronics, 2021, 14(4): 450-458.
Muyi ZHANG, Chong WANG, Chao CHEN, Jiang TANG. Recent progress in the research on using CuSbS2 and its derivative CuPbSbS3 as absorbers in case of photovoltaic devices. Front. Optoelectron., 2021, 14(4): 450-458.
 链接本文:  
https://academic.hep.com.cn/foe/CN/10.1007/s12200-020-1024-0
https://academic.hep.com.cn/foe/CN/Y2021/V14/I4/450
Fig.1  
Fig.2  
Fig.3  
Fig.4  
Fig.5  
CuSbS2 CuPbSbS3
mineral species chalcostibite bournonite
crystal system orthorhombic orthorhombic
space group Pnma (No. 62) Pmn21 (No. 31)
lattice parameter/Å a 6.018 7.885
b 3.796 8.287
c 14.495 8.816
crystal structure 2D layer 3D network
electronic dimensionality <3D 3D
absorption coefficient/cm1
(visible wavelength)
>7 × 104 >4 × 105
bandgap/eV 1.40 1.31
maximum efficiency limit 23% 33%
CBM/eV −3.85 −3.93
VBM/eV −5.25 −5.24
Fermi energy/eV −4.86 −4.86
conduction type p p
hole mobility/(cm2·v−1·s−1) 49 7
carrier concentration/cm−3 2.66 × 1018 6.08 × 1014
dielectric constant ~13 7.1–7.6
melting point/°C 551 522
density/(g·cm−3) 5.03 5.63
Tab.1  
Fig.6  
absorber device structure fabrication VOC/mV JSC/(mA?cm−2) FF/% PCE/% year Ref.
CuSbS2 glass/Mo/CuSbS2/CdS/ZnO:Al electrochemical deposition 490 14.73 44 3.13 2014 [29]
CuSbS2 glass/FTO/TiO2/mp-TiO2/CuSbS2/HTM/Au metal/thiourea+ spin coating 304 21.50 46.8 3.10 2015 [31]
CuSbS2 glass/Mo/CuSbS2/CdS/ZnO/ZnO:Al/Ag two-stage
co-evaporation
526 9.57 37.4 1.90 2016 [24]
CuSbS2 glass/Mo/CuSbS2/CdS/i-ZnO/n-ZnO/Al spin coating 470 15.64 43.56 3.22 2016 [21]
CuSbS2 glass/Mo/TiN/CuSbS2/GaN/In0.15Ga0.85N/ITO co-sputtering 295 33.78 30 2.99 2017 [25]
CuPbSbS3 glass/ITO/CdS/CuPbSbS3/HTM/Au BDCA solution
+ spin coating
699 8.19 39 2.23 2020 [13]
Tab.2  
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