1. State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China; 2. The Research Center of the China-Hemp Materials, The Quartermaster Equipment Institute of the General Logistics Department of PLA, Beijing 100082, China
This study was conducted on the surface-hardening effect of boron ion implantation in 6H-SiC ceramics. The SiC samples prepared by pressureless sintering were carefully polished, and 500 keV B+ implanted in 6H-SiC ceramics at room temperature and four implantation doses, namely, 1×1015, 5×1015, 1×1016, and 5×1016 cm-2, were chosen. The implanted samples were analyzed by scanning electron microscope and Raman spectra. The Vickers hardness of the samples was evidently increased. The thickness of the damage layer was about 1 μm, which is consistent with the simulated results. The structure of the damage layer was different from the internal part and severely damaged at high doses.
Corresponding Author(s):
LI Zheng-cao,Email:zcli@tsinghua.edu.cn
引用本文:
. Surface-hardening effect of B implantation in 6H-SiC ceramics[J]. Frontiers of Materials Science in China, 2009, 3(3): 281-284.
Heng DU, Zheng-cao LI, Tian MA, Wei MIAO, Zheng-jun ZHANG. Surface-hardening effect of B implantation in 6H-SiC ceramics. Front Mater Sci Chin, 2009, 3(3): 281-284.
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