Epitaxial growth of SrRuO3 thin films by RF sputtering and study of surface morphology
Epitaxial growth of SrRuO3 thin films by RF sputtering and study of surface morphology
M. K. R. KHAN1,2(), M. ITO3, M. ISHIDA2,3,4
1. Department of Physics, University of Rajshahi, Rajshahi-6205, Bangladesh; 2. Venture Business Laboratory, Toyohashi University of Technology, Tempakucho, Toyohashi, Aichi 441-8580, Japan; 3. Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Tempakucho, Toyohashi, Aichi 441-8580, Japan; 4. JST-CREST, 4-1-8-Honcho, Kawaguchi, Saitama, Japan
We report on the epitaxial growth of SrRuO3 (SRO) thin films on Pt (111)/γ-Al2O3 (111) nSi (111) substrates. The grown thin films are crystalline and epitaxial as suggested by RHEED and XRD experiments. With the use of γ-Al2O3 (001)/nSi (001) and γ-Al2O3 (111)/nSi (111) substrates, crystalline but not epitaxial films have grown successfully. This result implies that lattice mismatch between nSi and SRO prevents the epitaxial growth of SRO film directly on nSi. However, the buffer Pt (111) layer mitigates lattice mismatch that provides to grow epitaxial film on nSi of quality. Morphological study shows a good surface with moderate roughness. Film grown at 700°C is smoother than the film grown at 750°C, but the variation of temperature does not affect significantly on the epitaxial nature of the films.
Corresponding Author(s):
KHAN M. K. R.,Email:fkrkhan@yahoo.co.uk
引用本文:
. Epitaxial growth of SrRuO3 thin films by RF sputtering and study of surface morphology[J]. Frontiers of Materials Science in China, 2010, 4(4): 387-393.
M. K. R. KHAN, M. ITO, M. ISHIDA. Epitaxial growth of SrRuO3 thin films by RF sputtering and study of surface morphology. Front Mater Sci Chin, 2010, 4(4): 387-393.
McKee R A, Walker F J, Chisholm M F. Crystalline oxides on silicon: the first five monolayers. Physical Review Letters , 1998, 81(14): 3014–3017 doi: 10.1103/PhysRevLett.81.3014
2
Eom C B, Van Dover R B, Phillips J M, . Fabrication and properties of epitaxial ferroelectric heterostructures with (SrRuO3) isotropic metallic oxide electrodes. Applied Physics Letters , 1993, 63(18): 2570–2572 doi: 10.1063/1.110436
3
Fukushima N, Abe K, Izuha M. Leakage degradation in BST dielectric capacitors with oxide and metal electrodes. In: Proceeding of Ferroelectric Thin Films VI, Materials Research Society, Pittsburg , 1997
4
Jones C W, Battle P D, Lightfoot P, . The structure of SrRuO3 by time-of-flight neutron powder diffraction. Acta Crystallographica , 1989, C45(3): 365–367
5
Randall J J, Ward R. The preparation of some ternary oxides of the platinum metals. Journal of the American Chemical Society , 1959, 81(11): 2629–2631 doi: 10.1021/ja01520a007
6
Rao R A, Gan Q, Eom C B. Growth mechanisms of epitaxial metallic oxide thin SrRuO3 thin films studied by scanning tunneling microscopy. Applied Physics Letters , 1997, 71(9): 1171–1173 doi: 10.1063/1.119616
7
Fahey K P, Clemens B M, Wills L A. Nonorthogonal twinning in thin film oxide perovskites. Applied Physics Letters , 1995, 67(17): 2480–2482 doi: 10.1063/1.114614
8
Jiang J C, Tian W, Pan X Q, . Domain structure of epitaxial SrRuO3 thin films on miscut (001) SrTiO3 substrates. Applied Physics Letters , 1998, 72(23): 2963–2965 doi: 10.1063/1.121508
9
Chen C L, Cao Y, Huang Z J, . Epitaxial SrRuO3 thin films on (001) SrTiO. Applied Physics Letters , 1997, 71(8): 1047–1049 doi: 10.1063/1.119723
10
Hiratani M, Okazaki C, Imagawa K, . SrRuO3 thin films grown under reduced oxygen pressure. Japanese Journal of Applied Physics , 1996, 35(Part 1, No. 12A): 6212–6216
11
Maria J P, Trolier-Mckinstry S, Schlom D G, . The influence of energetic bombardment on the structure and properties of epitaxial SrRuO3 thin films grown by pulsed laser deposition. Journal of Applied Physics , 1998, 83(8): 4373–4379 doi: 10.1063/1.367195
12
Jia Q X, Chu F, Adams C D, . Characteristics of conductive SrRuO3 thin films with different microstructures. Journal of Materials Research , 1996, 11(9): 2263–2268 doi: 10.1557/JMR.1996.0287
13
Chu F, Jia Q X, Landrum G, . Microstructures and electrical properties of SrRuO3 thin films on LaAlO3 substrates. Journal of Electronic Materials , 1996, 25(11): 1754–1759 doi: 10.1007/s11664-996-0031-2
14
Breitkopf R, Meda L J, Hass T, . Chemical vapor deposition of strontium ruthenate thin films from bis(2,4-dimethylpentadienyl) ruthenium and bis(tetramethylheptanedionato) strontium. Materials Research Society , 1998, 495: 51–55
15
Matsuzaki T, Okuda N, Shinozaki K, . Y2O3-stabilized ZrO2 thin films prepared by metalorganic chemical vapor deposition. Japanese Journal of Applied Physics , 1998, 37(11): 6229–6232 doi: 10.1143/JJAP.37.6229
16
Fr?hlich K, Hu?ekova K, Machajdik D, . Preparation of SrRuO3 films for advanced CMOS metal gates. Materials Science in Semiconductor Processing , 2004, 7(4–6): 265–269 doi: 10.1016/j.mssp.2004.09.012
17
Okada T, Ito M, Sawada K, . Growth of epitaxial γ-Al2O3(111) films with smooth surfaces on chemically oxidized Si(111) substrates using an Al–N2O mixed source molecular beam epitaxy. Journal of Crystal Growth , 2006, 290(1): 91–95 doi: 10.1016/j.jcrysgro.2005.12.079
18
Wado H, Shimizu T, Ishida M. Epitaxial growth of γ-Al2O3 layers on Si(111) using Al solid source and N2O gas molecular beam epitaxy. Applied Physics Letters , 1995, 67(15): 2200–2202 doi: 10.1063/1.115102
19
Jung Y-C, Miura H, Ishida M. Improvement of the surface morphology of the epitaxial γ-Al2O3 films on Si(111) grown using template growth with different temperatures by Al solid and N2O gas source molecular beam epitaxy (MBE). Journal of Crystal Growth , 1999, 201–202: 648–651 doi: 10.1016/S0022-0248(98)01439-0
20
Ishida M, Katakabe I, Ohtake N, . Epitaxial Al2O3 films on Si by low-pressure chemical vapor deposition. Applied Physics Letters , 1988, 52(16): 1326–1328 doi: 10.1063/1.99685
21
Ito M, Okada N, Takabe M, . High sensitivity ultrasonic sensor for hydrophone applications, using an epitaxial Pb(Zr,Ti)O3 film grown on SrRuO3/Pt/γ-Al2O3/Si. Sensors and Actuators A: Physical , 2008, 145–146: 278–282 doi: 10.1016/j.sna.2008.01.014
