Self-assembly of InAs quantum dots on GaAs(001)by molecular beam epitaxy

doi:10.1007/s11467-014-0422-4

Frontiers of Physics

2015, Vol. 10

Issue (1): 108101 https://doi.org/10.1007/s11467-014-0422-4

Condensed Matter, Materials Physics, and Statistical Physics

本期目录

Self-assembly of InAs quantum dots on GaAs(001)by molecular beam epitaxy

Ju Wu(

),Peng Jin

Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconduc tors, Chinese Academy of Sciences, Beijing 100083, China

全文: PDF(974 KB)

Abstract：

Currently, the nature of self-assembly of three-dimensional epitaxial islands or quantum dots (QDs) in a lattice-mismatched heteroepitaxial growth system, such as InAs/GaAs(001) and Ge/Si(001) as fabricated by molecular beam epitaxy (MBE), is still puzzling. The purpose of this article is to discuss how the self-assembly of InAs QDs in MBE InAs/GaAs(001) should be properly understood in atomic scale. First, the conventional kinetic theories that have traditionally been used to interpret QD self-assembly in heteroepitaxial growth with a significant lattice mismatch are reviewed briefly by examining the literature of the past two decades. Second, based on their own experimental data, the authors point out that InAs QD self-assembly can proceed in distinctly different kinetic ways depending on the growth conditions and so cannot be framed within a universal kinetic theory, and, furthermore, that the process may be transient, or the time required for a QD to grow to maturity may be significantly short, which is obviously inconsistent with conventional kinetic theories. Third, the authors point out that, in all of these conventional theories, two well-established experimental observations have been overlooked: i) A large number of “floating” indium atoms are present on the growing surface in MBE InAs/GaAs(001); ii) an elastically strained InAs film on the GaAs(001) substrate should be mechanically unstable. These two well-established experimental facts may be highly relevant and should be taken into account in interpreting InAs QD formation. Finally, the authors speculate that the formation of an InAs QD is more likely to be a collective event involving a large number of both indium and arsenic atoms simultaneously or, alternatively, a morphological/structural transformation in which a single atomic InAs sheet is transformed into a three-dimensional InAs island, accompanied by the rehybridization from the sp²-bonded to sp³- bonded atomic configuration of both indium and arsenic elements in the heteroepitaxial growth system.

Key words： molecular beam epitaxy InAs quantum dots

收稿日期: 2013-08-06 出版日期: 2015-02-10

Corresponding Author(s): Ju Wu

引用本文:

. [J]. Frontiers of Physics, 2015, 10(1): 108101.
Ju Wu, Peng Jin. Self-assembly of InAs quantum dots on GaAs(001)by molecular beam epitaxy. Front. Phys. , 2015, 10(1): 108101.

链接本文:

https://academic.hep.com.cn/fop/CN/10.1007/s11467-014-0422-4
https://academic.hep.com.cn/fop/CN/Y2015/V10/I1/108101

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