Modulation of the electronic states of perovskite SrCrO3 thin films through protonation via low-energy hydrogen plasma implantation approaches
Meng Wu1, Shanquan Chen2, Chuanwei Huang2(), Xing Ye3, Haiping Zhou3, Xiaochun Huang4, Kelvin H. L. Zhang4(), Wensheng Yan5, Lihua Zhang6, Kisslinger Kim6, Yingge Du7, Scott Chambers7, Jin-Cheng Zheng1, Hui-Qiong Wang1()
1. Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China 2. Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China 3. School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China 4. State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China 5. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China 6. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973-5000, USA 7. Physical Sciences Division, Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA 99352, USA
Hydrogenation of transition metal oxides offers a powerful platform to tailor physical functionalities as well as for potential applications in modern electronic technologies. An ideal nondestructive and efficient hydrogen incorporation approach is important for the realistic technological applications. We demonstrate the proton injection on SrCrO3 thin films via an efficient low-energy hydrogen plasma implantation experiments, without destroying the original lattice framework. Hydrogen ions accumulate largely at the interfacial regions with amorphous character which extend about one-third of the total thickness. The HxSrCrO3 (HSCO) thin films appear like exfoliated layers which however retain the fully strained state with distorted perovskite structure. Proton doping induces the change of Cr oxidation state from Cr4+ to Cr3+ in HSCO thin films and a transition from metallic to insulating phase. Our investigations suggest an attractive platform in manipulating the electronic phases in proton-based approaches and may offer a potential peeling off strategy for nanoscale devices through low-energy hydrogen plasma implantation approaches.
Corresponding Author(s):
Chuanwei Huang,Kelvin H. L. Zhang,Hui-Qiong Wang
引用本文:
. [J]. Frontiers of Physics, 2020, 15(1): 13601.
Meng Wu, Shanquan Chen, Chuanwei Huang, Xing Ye, Haiping Zhou, Xiaochun Huang, Kelvin H. L. Zhang, Wensheng Yan, Lihua Zhang, Kisslinger Kim, Yingge Du, Scott Chambers, Jin-Cheng Zheng, Hui-Qiong Wang. Modulation of the electronic states of perovskite SrCrO3 thin films through protonation via low-energy hydrogen plasma implantation approaches. Front. Phys. , 2020, 15(1): 13601.
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