High efficiency giant magnetoresistive device based on two-dimensional MXene (Mn2NO2)

doi:10.1007/s11467-022-1184-z

Frontiers of Physics

2022, Vol. 17

Issue (5): 53510 https://doi.org/10.1007/s11467-022-1184-z

本期目录

High efficiency giant magnetoresistive device based on two-dimensional MXene (Mn₂NO₂)

Xiaolin Zhang¹, Pengwei Gong¹, Fangqi Liu¹, Kailun Yao², Jian Wu³, Sicong Zhu¹(

)

¹. The State Key Laboratory for Refractories and Metallurgy, Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Collaborative Innovation Center for Advanced Steels, International Research Institute for Steel Technology, Wuhan University of Science and Technology, Wuhan 430081, China
². Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
³. College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China

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Abstract：

Due to the unique electronic structure of half-metals, characterized by the conductivity of majority-spin and the band gap of minority-spin, these materials have emerged as suitable alternatives for the design of efficient giant magnetoresistive (GMR) devices. Based on the first-principles calculations, an excellent GMR device has been designed by using two-dimensional (2D) half-metal Mn₂NO₂. The results show that Mn₂NO₂ has sandwiched between the Au/nMn₂NO₂ (n = 1, 2, 3)/Au heterojunction and maintains its half-metallic properties. Due to the half-metallic characteristics of Mn₂NO₂, the total current of the monolayer device can reach up to 1500 nA in the ferromagnetic state. At low voltage, the maximum GMR is observed to be 1.15 × 10³¹ %. Further, by increasing the number of layers, the ultra-high GMR at low voltage is still maintained. The developed device is a spintronic device exhibiting the highest magnetoresistive ratio reported theoretically so far. Simultaneously, a significant negative differential resistance (NDR) effect is also observed in the heterojunction. Owing to its excellent half-metallic properties and 2D structure, Mn₂NO₂ is an ideal energy-saving GMR material.

Key words： half-metals Mn₂NO₂ giant magnetoresistive

收稿日期: 2022-02-23 出版日期: 2022-07-26

Corresponding Author(s): Sicong Zhu

引用本文:

. [J]. Frontiers of Physics, 2022, 17(5): 53510.
Xiaolin Zhang, Pengwei Gong, Fangqi Liu, Kailun Yao, Jian Wu, Sicong Zhu. High efficiency giant magnetoresistive device based on two-dimensional MXene (Mn₂NO₂). Front. Phys. , 2022, 17(5): 53510.

链接本文:

https://academic.hep.com.cn/fop/CN/10.1007/s11467-022-1184-z
https://academic.hep.com.cn/fop/CN/Y2022/V17/I5/53510

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