Improving the device performances of two-dimensional semiconducting transition metal dichalcogenides: Three strategies
Mo Cheng1, Junbo Yang1, Xiaohui Li1, Hui Li1, Ruofan Du1, Jianping Shi1(), Jun He2()
1. The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China 2. Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
Two-dimensional (2D) semiconductors are emerging as promising candidates for the next-generation nanoelectronics. As a type of unique channel materials, 2D semiconducting transition metal dichalcogenides (TMDCs), such as MoS2 and WS2, exhibit great potential for the state-of-the-art field-effect transistors owing to their atomically thin thicknesses, dangling-band free surfaces, and abundant band structures. Even so, the device performances of 2D semiconducting TMDCs are still failing to reach the theoretical values so far, which is attributed to the intrinsic defects, excessive doping, and daunting contacts between electrodes and channels. In this article, we review the up-to-date three strategies for improving the device performances of 2D semiconducting TMDCs: (i) the controllable synthesis of wafer-scale 2D semiconducting TMDCs single crystals to reduce the evolution of grain boundaries, (ii) the ingenious doping of 2D semiconducting TMDCs to modulate the band structures and suppress the impurity scatterings, and (iii) the optimization design of interfacial contacts between electrodes and channels to reduce the Schottky barrier heights and contact resistances. In the end, the challenges regarding the improvement of device performances of 2D semiconducting TMDCs are highlighted, and the further research directions are also proposed. We believe that this review is comprehensive and insightful for downscaling the electronic devices and extending the Moore’s law.
. [J]. Frontiers of Physics, 2022, 17(6): 63601.
Mo Cheng, Junbo Yang, Xiaohui Li, Hui Li, Ruofan Du, Jianping Shi, Jun He. Improving the device performances of two-dimensional semiconducting transition metal dichalcogenides: Three strategies. Front. Phys. , 2022, 17(6): 63601.
Liu C. , Chen H. , Wang S. , Liu Q. , G. Jiang Y. , W. Zhang D. , Liu M. , Zhou P. . Two-dimensional materials for next-generation computing technologies. Nat. Nanotechnol., 2020, 15( 7): 545 https://doi.org/10.1038/s41565-020-0724-3
W. Liang B. , H. Chang W. , Y. Lin H. , C. Chen P. , T. Zhang Y. , B. Simbulan K. , S. Li K. , H. Chen J. , H. Kuan C. , W. Lan Y. . High-frequency graphene base hot-electron transistor. ACS Nano, 2021, 15( 4): 6756 https://doi.org/10.1021/acsnano.0c10208
7
Gong Y. , Q. Xu Z. , Li D. , Zhang J. , Aharonovich I. , Zhang Y. . Two-dimensional hexagonal boron nitride for building next-generation energy-efficient devices. ACS Energy Lett., 2021, 6( 3): 985 https://doi.org/10.1021/acsenergylett.0c02427
8
R. Glavin N. , Muratore C. , L. Jespersen M. , Hu J. , T. Hagerty P. , M. Hilton A. , T. Blake A. , A. Grabowski C. , F. Durstock M. , E. McConney M. , M. Hilgefort D. , S. Fisher T. , A. Voevodin A. . Amorphous boron nitride: A universal, ultrathin dielectric for 2D nanoelectronics. Adv. Funct. Mater., 2016, 26( 16): 2640 https://doi.org/10.1002/adfm.201505455
9
Shi J. , Hong M. , Zhang Z. , Ji Q. , Zhang Y. . Physical properties and potential applications of two-dimensional metallic transition metal dichalcogenides. Coord. Chem. Rev., 2018, 376( 1): 1 https://doi.org/10.1016/j.ccr.2018.07.019
10
Wang P. , Huan Y. , Yang P. , Cheng M. , Shi J. , Zhang Y. . Controlled syntheses and multifunctional applications of two-dimensional metallic transition metal dichalcogenides. Acc. Mater. Res., 2021, 2( 9): 751 https://doi.org/10.1021/accountsmr.1c00092
11
Zhang Y. , W. Tan Y. , L. Stormer H. , Kim P. . Experimental observation of the quantum Hall effect and Berry’s phase in graphene. Nature, 2005, 438( 7065): 201 https://doi.org/10.1038/nature04235
12
S. Novoselov K. , Jiang Z. , Zhang Y. , V. Morozov S. , L. Stormer H. , Zeitler U. , C. Maan J. , S. Boebinger G. , Kim P. , K. Geim A. . Room-temperature quantum Hall effect in graphene. Science, 2007, 315( 5817): 1379 https://doi.org/10.1126/science.1137201
13
Du X. , Skachko I. , Barker A. , Y. Andrei E. . Approaching ballistic transport in suspended graphene. Nat. Nanotechnol., 2008, 3( 8): 491 https://doi.org/10.1038/nnano.2008.199
14
Seol Jae H. , Jo I. , Moore Arden L. , Lindsay L. , Aitken Zachary H. , Pettes Michael T. , Li X. , Yao Z. , Huang R. , Broido D. , Mingo N. , R. Rodney S. , Shi L. . Two-dimensional phonon transport in supported graphene. Science, 2010, 328( 5975): 213 https://doi.org/10.1126/science.1184014
15
R. Nair R. , Blake P. , N. Grigorenko A. , S. Novoselov K. , J. Booth T. , Stauber T. , M. R. Peres N. , K. Geim A. . Fine structure constant defines visual transparency of graphene. Science, 2008, 320( 5881): 1308 https://doi.org/10.1126/science.1156965
16
Ju L. , Bie M. , Zhang X. , Chen X. , Kou L. . Two-dimensional Janus van der Waals heterojunctions: A review of recent research progresses. Front. Phys., 2021, 16( 1): 13201 https://doi.org/10.1007/s11467-020-1002-4
17
Akinwande D. , Huyghebaert C. , H. Wang C. , I. Serna M. , Goossens S. , J. Li L. , S. P. Wong H. , H. L. Koppens F. . Graphene and two-dimensional materials for silicon technology. Nature, 2019, 573( 7775): 507 https://doi.org/10.1038/s41586-019-1573-9
18
H. Wang Q. , Kalantar-Zadeh K. , Kis A. , N. Coleman J. , S. Strano M. . Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol., 2012, 7( 11): 699 https://doi.org/10.1038/nnano.2012.193
19
Tan C. , Lai Z. , Zhang H. . Ultrathin two-dimensional multinary layered metal chalcogenide nanomaterials. Adv. Mater., 2017, 29( 37): 1701392 https://doi.org/10.1002/adma.201701392
20
Tan C. , Cao X. , J. Wu X. , He Q. , Yang J. , Zhang X. , Chen J. , Zhao W. , Han S. , H. Nam G. , Sindoro M. , Zhang H. . Recent advances in ultrathin two-dimensional nanomaterials. Chem. Rev., 2017, 117( 9): 6225 https://doi.org/10.1021/acs.chemrev.6b00558
21
Liu Y. , Duan X. , J. Shin H. , Park S. , Huang Y. , Duan X. . Promises and prospects of two-dimensional transistors. Nature, 2021, 591( 7848): 43 https://doi.org/10.1038/s41586-021-03339-z
22
Jing X. , Illarionov Y. , Yalon E. , Zhou P. , Grasser T. , Shi Y. , Lanza M. . Engineering field effect transistors with 2D semiconducting channels: Status and prospects. Adv. Funct. Mater., 2020, 30( 18): 1901971 https://doi.org/10.1002/adfm.201901971
23
Zeng Q. , Wang H. , Fu W. , Gong Y. , Zhou W. , M. Ajayan P. , Lou J. , Liu Z. . Band engineering for novel two-dimensional atomic layers. Small, 2015, 11( 16): 1868 https://doi.org/10.1002/smll.201402380
24
Bao X. , Ou Q. , Q. Xu Z. , Zhang Y. , Bao Q. , Zhang H. . Band structure engineering in 2D materials for optoelectronic applications. Adv. Mater. Technol., 2018, 3( 11): 1800072 https://doi.org/10.1002/admt.201800072
25
Cui X. , H. Lee G. , D. Kim Y. , Arefe G. , Y. Huang P. , H. Lee C. , A. Chenet D. , Zhang X. , Wang L. , Ye F. , Pizzocchero F. , S. Jessen B. , Watanabe K. , Taniguchi T. , A. Muller D. , Low T. , Kim P. , Hone J. . Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. Nat. Nanotechnol., 2015, 10( 6): 534 https://doi.org/10.1038/nnano.2015.70
26
Radisavljevic B. , Radenovic A. , Brivio J. , Giacometti V. , Kis A. . Single-layer MoS2 transistors. Nat. Nanotechnol., 2011, 6( 3): 147 https://doi.org/10.1038/nnano.2010.279
27
Kappera R. , Voiry D. , E. Yalcin S. , Branch B. , Gupta G. , D. Mohite A. , Chhowalla M. . Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. Nat. Mater., 2014, 13( 12): 1128 https://doi.org/10.1038/nmat4080
28
Liu Y. , Guo J. , Wu Y. , Zhu E. , O. Weiss N. , He Q. , Wu H. , C. Cheng H. , Xu Y. , Shakir I. , Huang Y. , Duan X. . Pushing the performance limit of sub-100 nm molybdenum disulfide transistors. Nano Lett., 2016, 16( 10): 6337 https://doi.org/10.1021/acs.nanolett.6b02713
29
Hu Z. , Wu Z. , Han C. , He J. , Ni Z. , Chen W. . Two-dimensional transition metal dichalcogenides: Interface and defect engineering. Chem. Soc. Rev., 2018, 47( 9): 3100 https://doi.org/10.1039/C8CS00024G
30
Najmaei S. , Liu Z. , Zhou W. , Zou X. , Shi G. , Lei S. , I. Yakobson B. , C. Idrobo J. , M. Ajayan P. , Lou J. . Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers. Nat. Mater., 2013, 12( 8): 754 https://doi.org/10.1038/nmat3673
31
Rhodes D. , H. Chae S. , Ribeiro-Palau R. , Hone J. . Disorder in van der Waals heterostructures of 2D materials. Nat. Mater., 2019, 18( 6): 541 https://doi.org/10.1038/s41563-019-0366-8
32
Qiu H. , Xu T. , Wang Z. , Ren W. , Nan H. , Ni Z. , Chen Q. , Yuan S. , Miao F. , Song F. , Long G. , Shi Y. , Sun L. , Wang J. , Wang X. . Hopping transport through defect-induced localized states in molybdenum disulphide. Nat. Commun., 2013, 4( 1): 2642 https://doi.org/10.1038/ncomms3642
33
H. Ryu S. , Huh M. , Y. Park D. , Jozwiak C. , Rotenberg E. , Bostwick A. , S. Kim K. . Pseudogap in a crystalline insulator doped by disordered metals. Nature, 2021, 596( 7870): 68 https://doi.org/10.1038/s41586-021-03683-0
34
Suh J. , L. Tan T. , Zhao W. , Park J. , Y. Lin D. , E. Park T. , Kim J. , Jin C. , Saigal N. , Ghosh S. , M. Wong Z. , Chen Y. , Wang F. , Walukiewicz W. , Eda G. , Wu J. . Reconfiguring crystal and electronic structures of MoS2 by substitutional doping. Nat. Commun., 2018, 9( 1): 199 https://doi.org/10.1038/s41467-017-02631-9
35
Kochat V. , Apte A. , A. Hachtel J. , Kumazoe H. , Krishnamoorthy A. , Susarla S. , C. Idrobo J. , Shimojo F. , Vashishta P. , Kalia R. , Nakano A. , S. Tiwary C. , M. Ajayan P. . Re doping in 2D transition metal dichalcogenides as a new route to tailor structural phases and induced magnetism. Adv. Mater., 2017, 29( 43): 1703754 https://doi.org/10.1002/adma.201703754
36
Fu S. , Kang K. , Shayan K. , Yoshimura A. , Dadras S. , Wang X. , Zhang L. , Chen S. , Liu N. , Jindal A. , Li X. , N. Pasupathy A. , N. Vamivakas A. , Meunier V. , Strauf S. , H. Yang E. . Enabling room temperature ferromagnetism in monolayer MoS2 via in situ iron-doping. Nat. Commun., 2020, 11( 1): 2034 https://doi.org/10.1038/s41467-020-15877-7
37
M. Hus S. , Ge R. , A. Chen P. , Liang L. , E. Donnelly G. , Ko W. , Huang F. , H. Chiang M. , P. Li A. , Akinwande D. . Observation of single-defect memristor in an MoS2 atomic sheet. Nat. Nanotechnol., 2021, 16( 1): 58 https://doi.org/10.1038/s41565-020-00789-w
38
Wang S. , Robertson A. , H. Warner J. . Atomic structure of defects and dopants in 2D layered transition metal dichalcogenides. Chem. Soc. Rev., 2018, 47( 17): 6764 https://doi.org/10.1039/C8CS00236C
39
Y. Noh J. , Kim H. , Park M. , S. Kim Y. . Deep-to-shallow level transition of Re and Nb dopants in monolayer MoS2 with dielectric environments. Phys. Rev. B, 2015, 92( 11): 115431 https://doi.org/10.1103/PhysRevB.92.115431
40
Chen S. , Wang S. , Wang C. , Wang Z. , Liu Q. . Latest advance on seamless metal−semiconductor contact with ultralow Schottky barrier in 2D-material-based devices. Nano Today, 2022, 42 : 101372 https://doi.org/10.1016/j.nantod.2021.101372
41
Wang Y. , Chhowalla M. . Making clean electrical contacts on 2D transition metal dichalcogenides. Nat. Rev. Phys., 2022, 4( 2): 101 https://doi.org/10.1038/s42254-021-00389-0
42
Zhang X. , Liu B. , Gao L. , Yu H. , Liu X. , Du J. , Xiao J. , Liu Y. , Gu L. , Liao Q. , Kang Z. , Zhang Z. , Zhang Y. . Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions. Nat. Commun., 2021, 12( 1): 1522 https://doi.org/10.1038/s41467-021-21861-6
43
Zheng X. , Calò A. , Albisetti E. , Liu X. , S. M. Alharbi A. , Arefe G. , Liu X. , Spieser M. , J. Yoo W. , Taniguchi T. , Watanabe K. , Aruta C. , Ciarrocchi A. , Kis A. , S. Lee B. , Lipson M. , Hone J. , Shahrjerdi D. , Riedo E. . Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography. Nat. Electron., 2019, 2( 1): 17 https://doi.org/10.1038/s41928-018-0191-0
44
Manzeli S. Ovchinnikov D. Pasquier D. V. Yazyev O. Kis A., 2D transition metal dichalcogenides, Nat. Rev. Mater. 2(8), 17033 ( 2017)
45
Liu Y. , O. Weiss N. , Duan X. , C. Cheng H. , Huang Y. , Duan X. . Van der Waals heterostructures and devices. Nat. Rev. Mater., 2016, 1( 9): 16042 https://doi.org/10.1038/natrevmats.2016.42
46
Fiori G. , Bonaccorso F. , Iannaccone G. , Palacios T. , Neumaier D. , Seabaugh A. , K. Banerjee S. , Colombo L. . Electronics based on two-dimensional materials. Nat. Nanotechnol., 2014, 9( 10): 768 https://doi.org/10.1038/nnano.2014.207
47
M. van der Zande A. , Y. Huang P. , A. Chenet D. , C. Berkelbach T. , M. You Y. , H. Lee G. , F. Heinz T. , R. Reichman D. , A. Muller D. , C. Hone J. . Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Nat. Mater., 2013, 12( 6): 554 https://doi.org/10.1038/nmat3633
48
H. Ly T. , J. Perello D. , Zhao J. , M. Deng Q. , Kim H. , H. Han G. , H. Chae S. , Y. Jeong H. , H. Lee Y. . Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries. Nat. Commun., 2016, 7( 1): 10426 https://doi.org/10.1038/ncomms10426
49
G. Ji H. , C. Lin Y. , Nagashio K. , Maruyama M. , Solís-Fernández P. , Sukma Aji A. , Panchal V. , Okada S. , Suenaga K. , Ago H. . Hydrogen-assisted epitaxial growth of monolayer tungsten disulfide and seamless grain stitching. Chem. Mater., 2018, 30( 2): 403 https://doi.org/10.1021/acs.chemmater.7b04149
50
Wu T. , Zhang X. , Yuan Q. , Xue J. , Lu G. , Liu Z. , Wang H. , Wang H. , Ding F. , Yu Q. , Xie X. , Jiang M. . Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu−Ni alloys. Nat. Mater., 2016, 15( 1): 43 https://doi.org/10.1038/nmat4477
51
H. Lee J. , K. Lee E. , J. Joo W. , Jang Y. , S. Kim B. , Y. Lim J. , H. Choi S. , J. Ahn S. , R. Ahn J. , H. Park M. , W. Yang C. , L. Choi B. , W. Hwang S. , Whang D. . Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium. Science, 2014, 344( 6181): 286 https://doi.org/10.1126/science.1252268
52
Huang M. , V. Bakharev P. , J. Wang Z. , Biswal M. , Yang Z. , Jin S. , Wang B. , J. Park H. , Li Y. , Qu D. , Kwon Y. , Chen X. , H. Lee S. , G. Willinger M. , J. Yoo W. , Lee Z. , S. Ruoff R. . Large-area single-crystal AB-bilayer and ABA-trilayer graphene grown on a Cu/Ni(111) foil. Nat. Nanotechnol., 2020, 15( 4): 289 https://doi.org/10.1038/s41565-019-0622-8
53
Wang M. , Huang M. , Luo D. , Li Y. , Choe M. , K. Seong W. , Kim M. , Jin S. , Wang M. , Chatterjee S. , Kwon Y. , Lee Z. , S. Ruoff R. . Single-crystal, large-area, fold-free monolayer graphene. Nature, 2021, 596( 7873): 519 https://doi.org/10.1038/s41586-021-03753-3
54
S. Lee J. , H. Choi S. , J. Yun S. , I. Kim Y. , Boandoh S. , H. Park J. , G. Shin B. , Ko H. , H. Lee S. , M. Kim Y. , H. Lee Y. , K. Kim K. , M. Kim S. . Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation. Science, 2018, 362( 6416): 817 https://doi.org/10.1126/science.aau2132
55
Wang L. , Xu X. , Zhang L. , Qiao R. , Wu M. , Wang Z. , Zhang S. , Liang J. , Zhang Z. , Zhang Z. , Chen W. , Xie X. , Zong J. , Shan Y. , Guo Y. , Willinger M. , Wu H. , Li Q. , Wang W. , Gao P. , Wu S. , Zhang Y. , Jiang Y. , Yu D. , Wang E. , Bai X. , J. Wang Z. , Ding F. , Liu K. . Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper. Nature, 2019, 570( 7759): 91 https://doi.org/10.1038/s41586-019-1226-z
56
A. Chen T. , P. Chuu C. , C. Tseng C. , K. Wen C. , S. P. Wong H. , Pan S. , Li R. , A. Chao T. , C. Chueh W. , Zhang Y. , Fu Q. , I. Yakobson B. , H. Chang W. , J. Li L. . Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu(111). Nature, 2020, 579( 7798): 219 https://doi.org/10.1038/s41586-020-2009-2
57
Zhang L. , Dong J. , Ding F. . Strategies, status, and challenges in wafer scale single crystalline two-dimensional materials synthesis. Chem. Rev., 2021, 121( 11): 6321 https://doi.org/10.1021/acs.chemrev.0c01191
58
Xu X. , Pan Y. , Liu S. , Han B. , Gu P. , Li S. , Xu W. , Peng Y. , Han Z. , Chen J. , Gao P. , Ye Y. . Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2. Science, 2021, 372( 6538): 195 https://doi.org/10.1126/science.abf5825
59
Cho S. , Kim S. , H. Kim J. , Zhao J. , Seok J. , H. Keum D. , Baik J. , H. Choe D. , J. Chang K. , Suenaga K. , W. Kim S. , H. Lee Y. , Yang H. . Phase patterning for ohmic homojunction contact in MoTe2. Science, 2015, 349( 6248): 625 https://doi.org/10.1126/science.aab3175
60
H. Sung J. , Heo H. , Si S. , H. Kim Y. , R. Noh H. , Song K. , Kim J. , S. Lee C. , Y. Seo S. , H. Kim D. , K. Kim H. , W. Yeom H. , H. Kim T. , Y. Choi S. , S. Kim J. , H. Jo M. . Coplanar semiconductor–metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy. Nat. Nanotechnol., 2017, 12( 11): 1064 https://doi.org/10.1038/nnano.2017.161
61
Chen L. , Liu B. , Ge M. , Ma Y. , N. Abbas A. , Zhou C. . Step-edge-guided nucleation and growth of aligned WSe2 on sapphire via a layer-over-layer growth mode. ACS Nano, 2015, 9( 8): 8368 https://doi.org/10.1021/acsnano.5b03043
62
Li T. , Guo W. , Ma L. , Li W. , Yu Z. , Han Z. , Gao S. , Liu L. , Fan D. , Wang Z. , Yang Y. , Lin W. , Luo Z. , Chen X. , Dai N. , Tu X. , Pan D. , Yao Y. , Wang P. , Nie Y. , Wang J. , Shi Y. , Wang X. . Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire. Nat. Nanotechnol., 2021, 16( 11): 1201 https://doi.org/10.1038/s41565-021-00963-8
63
Yu H. , Liao M. , Zhao W. , Liu G. , Zhou X. , Wei Z. , Xu X. , Liu K. , Hu Z. , Deng K. , Zhou S. , A. Shi J. , Gu L. , Shen C. , Zhang T. , Du L. , Xie L. , Zhu J. , Chen W. , Yang R. , Shi D. , Zhang G. . Wafer-scale growth and transfer of highly-oriented monolayer MoS2 continuous films. ACS Nano, 2017, 11( 12): 12001 https://doi.org/10.1021/acsnano.7b03819
64
K. H. Smithe K. , V. Suryavanshi S. , Muñoz Rojo M. , D. Tedjarati A. , Pop E. . Low variability in synthetic monolayer MoS2 devices. ACS Nano, 2017, 11( 8): 8456 https://doi.org/10.1021/acsnano.7b04100
65
Dong R. , Gong X. , Yang J. , Sun Y. , Ma L. , Wang J. . The intrinsic thermodynamic difficulty and a step-guided mechanism for the epitaxial growth of uniform multilayer MoS2 with controllable thickness. Adv. Mater., 2022, 34( 20): 2201402 https://doi.org/10.1002/adma.202201402
66
Liu L. , Li T. , Ma L. , Li W. , Gao S. , Sun W. , Dong R. , Zou X. , Fan D. , Shao L. , Gu C. , Dai N. , Yu Z. , Chen X. , Tu X. , Nie Y. , Wang P. , Wang J. , Shi Y. , Wang X. . Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire. Nature, 2022, 605( 7908): 69 https://doi.org/10.1038/s41586-022-04523-5
67
Wang J. , Xu X. , Cheng T. , Gu L. , Qiao R. , Liang Z. , Ding D. , Hong H. , Zheng P. , Zhang Z. , Zhang Z. , Zhang S. , Cui G. , Chang C. , Huang C. , Qi J. , Liang J. , Liu C. , Zuo Y. , Xue G. , Fang X. , Tian J. , Wu M. , Guo Y. , Yao Z. , Jiao Q. , Liu L. , Gao P. , Li Q. , Yang R. , Zhang G. , Tang Z. , Yu D. , Wang E. , Lu J. , Zhao Y. , Wu S. , Ding F. , Liu K. . Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire. Nat. Nanotechnol., 2022, 17( 1): 33 https://doi.org/10.1038/s41565-021-01004-0
68
Yang P. , Zhang S. , Pan S. , Tang B. , Liang Y. , Zhao X. , Zhang Z. , Shi J. , Huan Y. , Shi Y. , J. Pennycook S. , Ren Z. , Zhang G. , Chen Q. , Zou X. , Liu Z. , Zhang Y. . Epitaxial growth of centimeter-scale single-crystal MoS2 monolayer on Au(111). ACS Nano, 2020, 14( 4): 5036 https://doi.org/10.1021/acsnano.0c01478
69
Aljarb A. , Cao Z. , Tang H. , Huang J. , Li M. , Hu W. , Cavallo L. , Li L. . Substrate lattice-guided seed formation controls the orientation of 2D transition-metal dichalcogenides. ACS Nano, 2017, 11( 9): 9215 https://doi.org/10.1021/acsnano.7b04323
70
Chubarov M. , H. Choudhury T. , R. Hickey D. , Bachu S. , Zhang T. , Sebastian A. , Bansal A. , Zhu H. , Trainor N. , Das S. , Terrones M. , Alem N. , M. Redwing J. . Wafer-scale epitaxial growth of unidirectional WS2 monolayers on sapphire. ACS Nano, 2021, 15( 2): 2532 https://doi.org/10.1021/acsnano.0c06750
71
Shinada T. , Okamoto S. , Kobayashi T. , Ohdomari I. . Enhancing semiconductor device performance using ordered dopant arrays. Nature, 2005, 437( 7062): 1128 https://doi.org/10.1038/nature04086
72
Y. Seo S. , Moon G. , F. N. Okello O. , Y. Park M. , Han C. , Cha S. , Choi H. , W. Yeom H. , Y. Choi S. , Park J. , H. Jo M. . Reconfigurable photo-induced doping of two-dimensional van der Waals semiconductors using different photon energies. Nat. Electron., 2021, 4( 1): 38 https://doi.org/10.1038/s41928-020-00512-6
73
H. Chen Y. , R. Tamming R. , Chen K. , Zhang Z. , Liu F. , Zhang Y. , M. Hodgkiss J. , J. Blaikie R. , Ding B. , Qiu M. . Bandgap control in two-dimensional semiconductors via coherent doping of plasmonic hot electrons. Nat. Commun., 2021, 12( 1): 4332 https://doi.org/10.1038/s41467-021-24667-8
74
Zhou J. , Zhu H. , Song Q. , Ding Z. , Mao J. , Ren Z. , Chen G. . Mobility enhancement in heavily doped semiconductors via electron cloaking. Nat. Commun., 2022, 13( 1): 2482 https://doi.org/10.1038/s41467-022-29958-2
75
Li B. Xing T. Zhong M. Huang L. Lei N. Zhang J. Li J. Wei Z., A two-dimensional Fe-doped SnS2 magnetic semiconductor , Nat. Commun. 8(1), 1958 ( 2017)
76
Zhou J. , Lin J. , Sims H. , Jiang C. , Cong C. , A. Brehm J. , Zhang Z. , Niu L. , Chen Y. , Zhou Y. , Wang Y. , Liu F. , Zhu C. , Yu T. , Suenaga K. , Mishra R. , T. Pantelides S. , G. Zhu Z. , Gao W. , Liu Z. , Zhou W. . Synthesis of Co-doped MoS2 monolayers with enhanced valley splitting. Adv. Mater., 2020, 32( 11): 1906536 https://doi.org/10.1002/adma.201906536
77
Li Q. , Zhao X. , Deng L. , Shi Z. , Liu S. , Wei Q. , Zhang L. , Cheng Y. , Zhang L. , Lu H. , Gao W. , Huang W. , W. Qiu C. , Xiang G. , J. Pennycook S. , Xiong Q. , Loh K. , Peng B. . Enhanced valley Zeeman splitting in Fe-doped monolayer MoS2. ACS Nano, 2020, 14( 4): 4636 https://doi.org/10.1021/acsnano.0c00291
78
Zhang K. , Feng S. , Wang J. , Azcatl A. , Lu N. , Addou R. , Wang N. , Zhou C. , Lerach J. , Bojan V. , J. Kim M. , Q. Chen L. , M. Wallace R. , Terrones M. , Zhu J. , A. Robinson J. . Manganese doping of monolayer MoS2: The substrate is critical. Nano Lett., 2015, 15( 10): 6586 https://doi.org/10.1021/acs.nanolett.5b02315
79
Li H. , Cheng M. , Wang P. , Du R. , Song L. , He J. , Shi J. . Reducing contact resistance and boosting device performance of monolayer MoS2 by in situ Fe doping. Adv. Mater., 2022, 34( 18): 2200885 https://doi.org/10.1002/adma.202200885
80
Lee D. , J. Lee J. , S. Kim Y. , H. Kim Y. , C. Kim J. , Huh W. , Lee J. , Park S. , Y. Jeong H. , D. Kim Y. , H. Lee C. . Remote modulation doping in van der Waals heterostructure transistors. Nat. Electron., 2021, 4( 9): 664 https://doi.org/10.1038/s41928-021-00641-6
81
Wang Y. , Xiao J. , Zhu H. , Li Y. , Alsaid Y. , Y. Fong K. , Zhou Y. , Wang S. , Shi W. , Wang Y. , Zettl A. , J. Reed E. , Zhang X. . Structural phase transition in monolayer MoTe2 driven by electrostatic doping. Nature, 2017, 550( 7677): 487 https://doi.org/10.1038/nature24043
82
Song S. , Sim Y. , Y. Kim S. , H. Kim J. , Oh I. , Na W. , H. Lee D. , Wang J. , Yan S. , Liu Y. , Kwak J. , H. Chen J. , Cheong H. , W. Yoo J. , Lee Z. , Y. Kwon S. . Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal−semiconductor contacts at the Schottky−Mott limit. Nat. Electron., 2020, 3( 4): 207 https://doi.org/10.1038/s41928-020-0396-x
83
Jung Y. , S. Choi M. , Nipane A. , Borah A. , Kim B. , Zangiabadi A. , Taniguchi T. , Watanabe K. , J. Yoo W. , Hone J. , T. Teherani J. . Transferred via contacts as a platform for ideal two-dimensional transistors. Nat. Electron., 2019, 2( 5): 187 https://doi.org/10.1038/s41928-019-0245-y
Allain A. , Kang J. , Banerjee K. , Kis A. . Electrical contacts to two-dimensional semiconductors. Nat. Mater., 2015, 14( 12): 1195 https://doi.org/10.1038/nmat4452
86
T. Tung R. . The physics and chemistry of the Schottky barrier height. Appl. Phys. Rev., 2014, 1( 1): 011304 https://doi.org/10.1063/1.4858400
87
Liu X. , S. Choi M. , Hwang E. , J. Yoo W. , Sun J. . Fermi level pinning dependent 2D semiconductor devices: Challenges and prospects. Adv. Mater., 2022, 34( 15): 2108425 https://doi.org/10.1002/adma.202108425
88
Liu Y. , Guo J. , Zhu E. , Liao L. , J. Lee S. , Ding M. , Shakir I. , Gambin V. , Huang Y. , Duan X. . Approaching the Schottky−Mott limit in van der Waals metal–semiconductor junctions. Nature, 2018, 557( 7707): 696 https://doi.org/10.1038/s41586-018-0129-8
89
Kwon G. , H. Choi Y. , Lee H. , S. Kim H. , Jeong J. , Jeong K. , Baik M. , Kwon H. , Ahn J. , Lee E. , H. Cho M. . Interaction- and defect-free van der Waals contacts between metals and two-dimensional semiconductors. Nat. Electron., 2022, 5( 4): 241 https://doi.org/10.1038/s41928-022-00746-6
90
C. Shen P. , Su C. , Lin Y. , S. Chou A. , C. Cheng C. , H. Park J. , H. Chiu M. , Y. Lu A. , L. Tang H. , M. Tavakoli M. , Pitner G. , Ji X. , Cai Z. , Mao N. , Wang J. , Tung V. , Li J. , Bokor J. , Zettl A. , I. Wu C. , Palacios T. , J. Li L. , Kong J. . Ultralow contact resistance between semimetal and monolayer semiconductors. Nature, 2021, 593( 7858): 211 https://doi.org/10.1038/s41586-021-03472-9
91
Shi J. , Wang X. , Zhang S. , Xiao L. , Huan Y. , Gong Y. , Zhang Z. , Li Y. , Zhou X. , Hong M. , Fang Q. , Zhang Q. , Liu X. , Gu L. , Liu Z. , Zhang Y. . Two-dimensional metallic tantalum disulfide as a hydrogen evolution catalyst. Nat. Commun., 2017, 8( 1): 958 https://doi.org/10.1038/s41467-017-01089-z
92
Shi J. , Chen X. , Zhao L. , Gong Y. , Hong M. , Huan Y. , Zhang Z. , Yang P. , Li Y. , Zhang Q. , Zhang Q. , Gu L. , Chen H. , Wang J. , Deng S. , Xu N. , Zhang Y. . Chemical vapor deposition grown wafer-scale 2D tantalum diselenide with robust charge-density-wave order. Adv. Mater., 2021, 30( 44): 1804616 https://doi.org/10.1002/adma.201804616
93
Ge J. , Luo T. , Lin Z. , Shi J. , Liu Y. , Wang P. , Zhang Y. , Duan W. , Wang J. . Magnetic moments induced by atomic vacancies in transition metal dichalcogenide flakes. Adv. Mater., 2018, 33( 4): 2005465 https://doi.org/10.1002/adma.202005465
94
Bonilla M. , Kolekar S. , Ma Y. , C. Diaz H. , Kalappattil V. , Das R. , Eggers T. , R. Gutierrez H. , H. Phan M. , Batzill M. . Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates. Nat. Nanotechnol., 2018, 13( 4): 289 https://doi.org/10.1038/s41565-018-0063-9
95
Zhao K. , Lin H. , Xiao X. , Huang W. , Yao W. , Yan M. , Xing Y. , Zhang Q. , X. Li Z. , Hoshino S. , Wang J. , Zhou S. , Gu L. , S. Bahramy M. , Yao H. , Nagaosa N. , K. Xue Q. , T. Law K. , Chen X. , H. Ji S. . Disorder-induced multifractal superconductivity in monolayer niobium dichalcogenides. Nat. Phys., 2019, 15( 9): 904 https://doi.org/10.1038/s41567-019-0570-0
96
Xing Y. , Yang P. , Ge J. , Yan J. , Luo J. , Ji H. , Yang Z. , Li Y. , Wang Z. , Liu Y. , Yang F. , Qiu P. , Xi C. , Tian M. , Liu Y. , Lin X. , Wang J. . Extrinsic and intrinsic anomalous metallic states in transition metal dichalcogenide Ising superconductors. Nano Lett., 2021, 21( 18): 7486 https://doi.org/10.1021/acs.nanolett.1c01426
97
Wang Z. , Y. Sun Y. , Abdelwahab I. , Cao L. , Yu W. , Ju H. , Zhu J. , Fu W. , Chu L. , Xu H. , P. Loh K. . Surface-limited superconducting phase transition on 1T-TaS2. ACS Nano, 2018, 12( 12): 12619 https://doi.org/10.1021/acsnano.8b07379
98
Hall J. , Ehlen N. , Berges J. , van Loon E. , van Efferen C. , Murray C. , Rösner M. , Li J. , V. Senkovskiy B. , Hell M. , Rolf M. , Heider T. , C. Asensio M. , Avila J. , Plucinski L. , Wehling T. , Grüneis A. , Michely T. . Environmental control of charge density wave order in monolayer 2H-TaS2. ACS Nano, 2019, 13( 9): 10210 https://doi.org/10.1021/acsnano.9b03419
99
Zhu C. , Chen Y. , Liu F. , Zheng S. , Li X. , Chaturvedi A. , Zhou J. , Fu Q. , He Y. , Zeng Q. , J. Fan H. , Zhang H. , J. Liu W. , Yu T. , Liu Z. . Light-tunable 1T-TaS2 charge-density-wave oscillators. ACS Nano, 2018, 12( 11): 11203 https://doi.org/10.1021/acsnano.8b05756
100
Bekaert J. , Khestanova E. , G. Hopkinson D. , Birkbeck J. , Clark N. , Zhu M. , A. Bandurin D. , Gorbachev R. , Fairclough S. , Zou Y. , Hamer M. , J. Terry D. , J. P. Peters J. , M. Sanchez A. , Partoens B. , J. Haigh S. , V. Milošević M. , V. Grigorieva I. . Enhanced superconductivity in few-layer TaS2 due to healing by oxygenation. Nano Lett., 2020, 20( 5): 3808 https://doi.org/10.1021/acs.nanolett.0c00871
101
Chen Y. , Wu L. , Xu H. , Cong C. , Li S. , Feng S. , Zhang H. , Zou C. , Shang J. , A. Yang S. , P. Loh K. , Huang W. , Yu T. . Visualizing the anomalous charge density wave states in graphene/NbSe2 heterostructures. Adv. Mater., 2020, 32( 45): 2003746 https://doi.org/10.1002/adma.202003746
102
Dong Q. , Pan J. , Li S. , Fang Y. , Lin T. , Liu S. , Liu B. , Li Q. , Huang F. , Liu B. . Record-high superconductivity in transition metal dichalcogenides emerged in compressed 2H-TaS2. Adv. Mater., 2022, 34( 9): 2103168 https://doi.org/10.1002/adma.202103168
103
Zhang W. , Zhang L. , K. J. Wong P. , Yuan J. , Vinai G. , Torelli P. , van der Laan G. , P. Feng Y. , T. S. Wee A. . Magnetic transition in monolayer VSe2 via interface hybridization. ACS Nano, 2019, 13( 8): 8997 https://doi.org/10.1021/acsnano.9b02996
104
Liu H. , Bao L. , Zhou Z. , Che B. , Zhang R. , Bian C. , Ma R. , Wu L. , Yang H. , Li J. , Gu C. , M. Shen C. , Du S. , J. Gao H. . Quasi-2D transport and weak antilocalization effect in few-layered VSe2. Nano Lett., 2019, 19( 7): 4551 https://doi.org/10.1021/acs.nanolett.9b01412
105
Chua R. , Henke J. , Saha S. , Huang Y. , Gou J. , He X. , Das T. , van Wezel J. , Soumyanarayanan A. , T. S. Wee A. . Coexisting charge-ordered states with distinct driving mechanisms in monolayer VSe2. ACS Nano, 2022, 16( 1): 783 https://doi.org/10.1021/acsnano.1c08304
106
Yu W. , Li J. , S. Herng T. , Wang Z. , Zhao X. , Chi X. , Fu W. , Abdelwahab I. , Zhou J. , Dan J. , Chen Z. , Chen Z. , Li Z. , Lu J. , J. Pennycook S. , P. Feng Y. , Ding J. , P. Loh K. . Chemically exfoliated VSe2 monolayers with room-temperature ferromagnetism. Adv. Mater., 2019, 31( 40): 1903779 https://doi.org/10.1002/adma.201903779
107
Wen Y. , Liu Z. , Zhang Y. , Xia C. , Zhai B. , Zhang X. , Zhai G. , Shen C. , He P. , Cheng R. , Yin L. , Yao Y. , Getaye Sendeku M. , Wang Z. , Ye X. , Liu C. , Jiang C. , Shan C. , Long Y. , He J. . Tunable room-temperature ferromagnetism in two-dimensional Cr2Te3. Nano Lett., 2020, 20( 5): 3130 https://doi.org/10.1021/acs.nanolett.9b05128
108
Zhang Y. , Chu J. , Yin L. , A. Shifa T. , Cheng Z. , Cheng R. , Wang F. , Wen Y. , Zhan X. , Wang Z. , He J. . Ultrathin magnetic 2D single-crystal CrSe. Adv. Mater., 2019, 31( 19): 1900056 https://doi.org/10.1002/adma.201900056
109
Zhang X. , Luo Z. , Yu P. , Cai Y. , Du Y. , Wu D. , Gao S. , Tan C. , Li Z. , Ren M. , Osipowicz T. , Chen S. , Jiang Z. , Li J. , Huang Y. , Yang J. , Chen Y. , Y. Ang C. , Zhao Y. , Wang P. , Song L. , Wu X. , Liu Z. , Borgna A. , Zhang H. . Lithiation-induced amorphization of Pd3P2S8 for highly efficient hydrogen evolution. Nat. Catal., 2018, 1( 6): 460 https://doi.org/10.1038/s41929-018-0072-y
110
Liu Y. , Wu J. , P. Hackenberg K. , Zhang J. , M. Wang Y. , Yang Y. , Keyshar K. , Gu J. , Ogitsu T. , Vajtai R. , Lou J. , M. Ajayan P. , C. Wood B. , I. Yakobson B. . Self-optimizing, highly surface-active layered metal dichalcogenide catalysts for hydrogen evolution. Nat. Energy, 2017, 2( 9): 17127 https://doi.org/10.1038/nenergy.2017.127
111
Yang J. , R. Mohmad A. , Wang Y. , Fullon R. , Song X. , Zhao F. , Bozkurt I. , Augustin M. , J. G. Santos E. , S. Shin H. , Zhang W. , Voiry D. , Y. Jeong H. , Chhowalla M. . Ultrahigh-current-density niobium disulfide catalysts for hydrogen evolution. Nat. Mater., 2019, 18( 12): 1309 https://doi.org/10.1038/s41563-019-0463-8
112
Yan M. , Pan X. , Wang P. , Chen F. , He L. , Jiang G. , Wang J. , Z. Liu J. , Xu X. , Liao X. , Yang J. , Mai L. . Field-effect tuned adsorption dynamics of VSe2 nanosheets for enhanced hydrogen evolution reaction. Nano Lett., 2017, 17( 7): 4109 https://doi.org/10.1021/acs.nanolett.7b00855
113
L. Liu Z. , Lei B. , L. Zhu Z. , Tao L. , Qi J. , L. Bao D. , Wu X. , Huang L. , Y. Zhang Y. , Lin X. , L. Wang Y. , Du S. , T. Pantelides S. , J. Gao H. . Spontaneous formation of 1D pattern in monolayer VSe2 with dispersive adsorption of Pt atoms for HER catalysis. Nano Lett., 2019, 19( 8): 4897 https://doi.org/10.1021/acs.nanolett.9b00889
114
S. Kwon I. , H. Kwak I. , T. Debela T. , Y. Kim J. , J. Yoo S. , G. Kim J. , Park J. , S. Kang H. . Phase-transition Mo1–xVxSe2 alloy nanosheets with rich V-Se vacancies and their enhanced catalytic performance of hydrogen evolution reaction. ACS Nano, 2021, 15( 9): 14672 https://doi.org/10.1021/acsnano.1c04453
115
Huan Y. , Shi J. , Zou X. , Gong Y. , Xie C. , Yang Z. , Zhang Z. , Gao Y. , Shi Y. , Li M. , Yang P. , Jiang S. , Hong M. , Gu L. , Zhang Q. , Yan X. , Zhang Y. . Scalable production of two-dimensional metallic transition metal dichalcogenide nanosheet powders using NaCl templates toward electrocatalytic applications. J. Am. Chem. Soc., 2019, 141( 47): 18694 https://doi.org/10.1021/jacs.9b06044
116
Yang C. , Feng J. , Lv F. , Zhou J. , Lin C. , Wang K. , Zhang Y. , Yang Y. , Wang W. , Li J. , Guo S. . Metallic graphene-like VSe2 ultrathin nanosheets: Superior potassium-ion storage and their working mechanism. Adv. Mater., 2018, 30( 27): 1800036 https://doi.org/10.1002/adma.201800036
117
Ming F. , Liang H. , Lei Y. , Zhang W. , N. Alshareef H. . Solution synthesis of VSe2 nanosheets and their alkali metal ion storage performance. Nano Energy, 2018, 53 : 11 https://doi.org/10.1016/j.nanoen.2018.08.035
118
Yu Q. Zhang Z. Qiu S. Luo Y. Liu Z. Yang F. Liu H. Ge S. Zou X. Ding B. Ren W. M. Cheng H. Sun C. Liu B., A Ta-TaS2 monolith catalyst with robust and metallic interface for superior hydrogen evolution , Nat. Commun. 12(1), 6051 ( 2021)
119
Feng J. , Sun X. , Wu C. , Peng L. , Lin C. , Hu S. , Yang J. , Xie Y. . Metallic few-layered VS2 ultrathin nanosheets: High two-dimensional conductivity for in-plane supercapacitors. J. Am. Chem. Soc., 2011, 133( 44): 17832 https://doi.org/10.1021/ja207176c
120
He P. , Yan M. , Zhang G. , Sun R. , Chen L. , An Q. , Mai L. . Layered VS2 nanosheet-based aqueous Zn ion battery cathode. Adv. Energy Mater., 2017, 7( 11): 1601920 https://doi.org/10.1002/aenm.201601920
121
Zhou J. , Wang L. , Yang M. , Wu J. , Chen F. , Huang W. , Han N. , Ye H. , Zhao F. , Li Y. , Li Y. . Hierarchical VS2 nanosheet assemblies: A universal host material for the reversible storage of alkali metal ions. Adv. Mater., 2017, 29( 35): 1702061 https://doi.org/10.1002/adma.201702061
122
Liang H. , Shi H. , Zhang D. , Ming F. , Wang R. , Zhuo J. , Wang Z. . Solution growth of vertical VS2 nanoplate arrays for electrocatalytic hydrogen evolution. Chem. Mater., 2016, 28( 16): 5587 https://doi.org/10.1021/acs.chemmater.6b01963
123
Zhang S. , Wang J. , L. Torad N. , Xia W. , A. Aslam M. , V. Kaneti Y. , Hou Z. , Ding Z. , Da B. , Fatehmulla A. , M. Aldhafiri A. , A. Farooq W. , Tang J. , Bando Y. , Yamauchi Y. . Rational design of nanoporous MoS2/VS2 heteroarchitecture for ultrahigh performance ammonia sensors. Small, 2020, 16( 12): 1901718 https://doi.org/10.1002/smll.201901718
124
Zhou Y. , Xu Q. , Ge T. , Zheng X. , Zhang L. , Yan P. . Accurate control of VS2 nanosheets for coexisting high photoluminescence and photothermal conversion efficiency. Angew. Chem. Int. Ed., 2020, 59( 8): 3322 https://doi.org/10.1002/anie.201912756
125
Zhang Z. , Gong Y. , Zou X. , Liu P. , Yang P. , Shi J. , Zhao L. , Zhang Q. , Gu L. , Zhang Y. . Epitaxial growth of two-dimensional metal−semiconductor transition-metal dichalcogenide vertical stacks (VSe2/MX2) and their band alignments. ACS Nano, 2019, 13( 1): 885 https://doi.org/10.1021/acsnano.8b08677
126
Shi J. , Huan Y. , Zhao X. , Yang P. , Hong M. , Xie C. , Pennycook S. , Zhang Y. . Two-dimensional metallic vanadium ditelluride as a high-performance electrode material. ACS Nano, 2021, 15( 1): 1858 https://doi.org/10.1021/acsnano.0c10250
127
Zhou Z. , Yang F. , Wang S. , Wang L. , Wang X. , Wang C. , Xie Y. , Liu Q. . Emerging of two-dimensional materials in novel memristor. Front. Phys., 2022, 17( 2): 23204 https://doi.org/10.1007/s11467-021-1114-5
128
Du L. , Wang Z. , Zhao G. . Novel intelligent devices: Two-dimensional materials based memristors. Front. Phys., 2022, 17( 2): 23602 https://doi.org/10.1007/s11467-022-1152-7
129
Yu H. , Kutana A. , I. Yakobson B. . Carrier delocalization in two-dimensional coplanar p−n junctions of graphene and metal dichalcogenides. Nano Lett., 2016, 16( 8): 5032 https://doi.org/10.1021/acs.nanolett.6b01822
130
Zhang Y. , Yin L. , Chu J. , A. Shifa T. , Xia J. , Wang F. , Wen Y. , Zhan X. , Wang Z. , He J. . Edge-epitaxial growth of 2D NbS2-WS2 lateral metal−semiconductor heterostructures. Adv. Mater., 2018, 30( 40): 1803665 https://doi.org/10.1002/adma.201803665
131
Fu Q. , Wang X. , Zhou J. , Xia J. , Zeng Q. , Lv D. , Zhu C. , Wang X. , Shen Y. , Li X. , Hua Y. , Liu F. , Shen Z. , Jin C. , Liu Z. . One-step synthesis of metal/semiconductor heterostructure NbS2/MoS2. Chem. Mater., 2018, 30( 12): 4001 https://doi.org/10.1021/acs.chemmater.7b05117
132
Wang X. , Wang Z. , Zhang J. , Wang X. , Zhang Z. , Wang J. , Zhu Z. , Li Z. , Liu Y. , Hu X. , Qiu J. , Hu G. , Chen B. , Wang N. , He Q. , Chen J. , Yan J. , Zhang W. , Hasan T. , Li S. , Li H. , Zhang H. , Wang Q. , Huang X. , Huang W. . Realization of vertical metal semiconductor heterostructures via solution phase epitaxy. Nat. Commun., 2018, 9( 1): 3611 https://doi.org/10.1038/s41467-018-06053-z
133
Zhai X. , Xu X. , Peng J. , Jing F. , Zhang Q. , Liu H. , Hu Z. . Enhanced optoelectronic performance of CVD-grown metal−semiconductor NiTe2/MoS2 heterostructures. ACS Appl. Mater. Interfaces, 2020, 12( 21): 24093 https://doi.org/10.1021/acsami.0c02166
134
S. Leong W. , Ji Q. , Mao N. , Han Y. , Wang H. , J. Goodman A. , Vignon A. , Su C. , Guo Y. , C. Shen P. , Gao Z. , A. Muller D. , A. Tisdale W. , Kong J. . Synthetic lateral metal−semiconductor heterostructures of transition metal disulfides. J. Am. Chem. Soc., 2018, 140( 39): 12354 https://doi.org/10.1021/jacs.8b07806
135
Li J. , Yang X. , Liu Y. , Huang B. , Wu R. , Zhang Z. , Zhao B. , Ma H. , Dang W. , Wei Z. , Wang K. , Lin Z. , Yan X. , Sun M. , Li B. , Pan X. , Luo J. , Zhang G. , Liu Y. , Huang Y. , Duan X. , Duan X. . General synthesis of two-dimensional van der Waals heterostructure arrays. Nature, 2020, 579( 7799): 368 https://doi.org/10.1038/s41586-020-2098-y
