A high-speed true random number generator based on Ag/SiNx/n-Si memristor

doi:10.1007/s11467-023-1331-1

Frontiers of Physics

2024, Vol. 19

Issue (1): 13202 https://doi.org/10.1007/s11467-023-1331-1

本期目录

A high-speed true random number generator based on Ag/SiN_x/n-Si memristor

Xiaobing Yan(

), Zixuan Zhang, Zhiyuan Guan, Ziliang Fang, Yinxing Zhang, Jianhui Zhao, Jiameng Sun, Xu Han, Jiangzhen Niu, Lulu Wang, Xiaotong Jia, Yiduo Shao, Zhen Zhao, Zhenqiang Guo, Bing Bai

Institute of Life Science and Green Development, Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding 071002, China

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Abstract：

The intrinsic variability of memristor switching behavior can be used as a natural source of randomness, this variability is valuable for safe applications in hardware, such as the true random number generator (TRNG). However, the speed of TRNG is still be further improved. Here, we propose a reliable Ag/SiN_x/n-Si volatile memristor, which exhibits a typical threshold switching device with stable repeat ability and fast switching speed. This volatile-memristor-based TRNG is combined with nonlinear feedback shift register (NFSR) to form a new type of high-speed dual output TRNG. Interestingly, the bit generation rate reaches a high speed of 112 kb/s. In addition, this new TRNG passed all 15 National Institute of Standards and Technology (NIST) randomness tests without post-processing steps, proving its performance as a hardware security application. This work shows that the SiN_x-based volatile memristor can realize TRNG and has great potential in hardware network security.

Key words： volatile memristor true random number generator (TRNG) delay time threshold switching device

收稿日期: 2023-04-01 出版日期: 2023-09-13

Corresponding Author(s): Xiaobing Yan

引用本文:

. [J]. Frontiers of Physics, 2024, 19(1): 13202.
Xiaobing Yan, Zixuan Zhang, Zhiyuan Guan, Ziliang Fang, Yinxing Zhang, Jianhui Zhao, Jiameng Sun, Xu Han, Jiangzhen Niu, Lulu Wang, Xiaotong Jia, Yiduo Shao, Zhen Zhao, Zhenqiang Guo, Bing Bai. A high-speed true random number generator based on Ag/SiN_x/n-Si memristor. Front. Phys. , 2024, 19(1): 13202.

链接本文:

https://academic.hep.com.cn/fop/CN/10.1007/s11467-023-1331-1
https://academic.hep.com.cn/fop/CN/Y2024/V19/I1/13202

Fig.1

Fig.2

Fig.3

Fig.4

Tab.1

Test	$P$ -value	Pass rate	Min. pass rate	Pass/fail

1. Frequency	0.676097	81/85	80/85	Pass
2. Block frequency	0.701879	84/85	80/85	Pass
3. Cumulative sums	0.624107, 0.126842	82/85, 81/85	80/85	Pass
4. Runs	0.340461	84/85	80/85	Pass
5. Longest run	0.126842	84/85	80/85	Pass
6. Rank	0.947557	85/85	80/85	Pass
7. FFT	0.284375	83/85	80/85	Pass
8. Non overlapping template	?	12447/12580	11917/12580	Pass
9. Overlapping template	0.823278	81/85	80/85	Pass
10. Universal	0.999091	85/85	80/85	Pass
11. Approximate entropy	0.624107	83/85	80/85	Pass
12. Random excursions	?	413/416	388/416	Pass
13. Random excursions variant	?	928/936	874/936	Pass
14. Serial	0.572333, 0.448892	83/85, 83/85	80/85	Pass
15. Linear complexity	0.598138	83/85	80/85	Pass

Tab.2

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