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Frontiers of Physics

ISSN 2095-0462

ISSN 2095-0470(Online)

CN 11-5994/O4

邮发代号 80-965

2019 Impact Factor: 2.502

Frontiers of Physics  2024, Vol. 19 Issue (3): 33202   https://doi.org/10.1007/s11467-023-1354-7
  本期目录
Strong anisotropy of thermal transport in the monolayer of a new puckered phase of PdSe
Zheng Shu, Huifang Xu, Hejin Yan, Yongqing Cai()
Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau 999078, China
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Abstract

We examine the electronic and transport properties of a new phase PdSe monolayer with a puckered structure calculated by first-principles and Boltzmann transport equation. The spin−orbit coupling is found to play a negligible effect on the electronic properties of PdSe monolayer. The lattice thermal conductivity of PdSe monolayer exhibits remarkable anisotropic characteristic due to anisotropic phonon group velocity along different directions and its intrinsic structure anisotropy. The compromised electronic mobility despite a relatively low thermal conduction results in a moderate ZT value but significantly anisotropic thermoelectric performance in single-layer PdSe. The present work suggests that the remarkable thermal transport anisotropy of PdSe monolayer can be used for thermal management, and enhance the scope of possibilities for heat flow manipulation in PdSe based devices. The sizeable puckered cages and wiggling lattice implies it an ideal platform for ionic and molecular engineering for thermoelectronic applications.

Key words2D materials    first-principles calculations    phonon
收稿日期: 2023-04-07      出版日期: 2023-11-17
Corresponding Author(s): Yongqing Cai   
 引用本文:   
. [J]. Frontiers of Physics, 2024, 19(3): 33202.
Zheng Shu, Huifang Xu, Hejin Yan, Yongqing Cai. Strong anisotropy of thermal transport in the monolayer of a new puckered phase of PdSe. Front. Phys. , 2024, 19(3): 33202.
 链接本文:  
https://academic.hep.com.cn/fop/CN/10.1007/s11467-023-1354-7
https://academic.hep.com.cn/fop/CN/Y2024/V19/I3/33202
Fig.1  
Fig.2  
Fig.3  
Fig.4  
Fig.5  
DirectionCarrier typeE1 (eV)C2D (J/m2)m* (me)μ (cm2·V?1·s?1)τ (× 10?15 s)
xx (a axis)Electron2.3613.572.973.916.61
Hole1.7213.5729.190.081.27
yy (b axis)Electron7.4098.559.140.311.59
Hole9.7098.551.824.484.64
Tab.1  
Fig.6  
Fig.7  
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