1. Hubei Province Key Laboratory of Systems Science in Metallurgical Process, The State Key Laboratory for Refractories and Metallurgy, Collaborative Innovation Center for Advanced Steels, International Research Institute for Steel Technology, Wuhan University of Science and Technology, Wuhan 430081, China 2. Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physical and Technology, Wuhan University, Wuhan 430072, China 3. College of Advanced Interdisciplinary Studies, Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China 4. Department of Mechanical Engineering, National University of Singapore, Singapore 117575, Singapore 5. i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and NanoBionics, Chinese Academy of Sciences, Suzhou 215123, China 6. Institute of Optical Science and Technology, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
Currently, magnetic storage devices are encountering the problem of achieving lightweight and high integration in mobile computing devices during the information age. As a result, there is a growing urgency for two-dimensional half-metallic materials with a high Curie temperature (TC). This study presents a theoretical investigation of the fundamental electromagnetic properties of the monolayer hexagonal lattice of Mn2X3 (X = S, Se, Te). Additionally, the potential application of Mn2X3 as magneto-resistive components is explored. All three of them fall into the category of ferromagnetic half-metals. In particular, the Monte Carlo simulations indicate that the TC of Mn2S3 reachs 381 K, noticeably greater than room temperature. These findings present notable advantages for the application of Mn2S3 in spintronic devices. Hence, a prominent spin filtering effect is apparent when employing non-equilibrium Green’s function simulations to examine the transport parameters. The resulting current magnitude is approximately 2 × 104 nA, while the peak gigantic magnetoresistance exhibits a substantial value of 8.36 × 1016 %. It is noteworthy that the device demonstrates a substantial spin Seebeck effect when the temperature differential between the electrodes is modified. In brief, Mn2X3 exhibits outstanding features as a high TC half-metal, exhibiting exceptional capabilities in electrical and thermal drives spin transport. Therefore, it holds great potential for usage in spintronics applications.
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