Yan Li1,2, You Jie Huang1, Xin Li Chen1,2, Wei Sheng Wang1,2, Xin Huang1, Hui Xiao2, Li Qiang Zhu1()
1. School of Physical Science and Technology, Ningbo University, Ningbo 315211, China 2. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
In order to fulfill the urgent requirements of functional products, circuit integration of different functional devices are commonly utilized. Thus, issues including production cycle, cost, and circuit crosstalk will get serious. Neuromorphic computing aims to break through the bottle neck of von Neumann architectures. Electronic devices with multi-operation modes, especially neuromorphic devices with multi-mode cognitive activities, would provide interesting solutions. Here, pectin/chitosan hybrid electrolyte gated oxide neuromorphic transistor was fabricated. With extremely strong proton related interfacial electric-double-layer coupling, the device can operate at low voltage of below 1 V. The device can also operate at multi-operation mode, including bottom gate mode, coplanar gate and pseudo-diode mode. Interestingly, the artificial synapse can work at low voltage of only 1 mV, exhibiting extremely low energy consumption of ~7.8 fJ, good signal-to-noise ratio of ~229.6 and sensitivity of ~23.6 dB. Both inhibitory and excitatory synaptic responses were mimicked on the pseudo-diode, demonstrating spike rate dependent plasticity activities. Remarkably, a linear classifier is proposed on the oxide neuromorphic transistor under synaptic metaplasticity mechanism. These results suggest great potentials of the oxide neuromorphic devices with multi-mode cognitive activities in neuromorphic platform.
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