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Frontiers of Physics

ISSN 2095-0462

ISSN 2095-0470(Online)

CN 11-5994/O4

邮发代号 80-965

2019 Impact Factor: 2.502

Frontiers of Physics  2024, Vol. 19 Issue (5): 53206   https://doi.org/10.1007/s11467-024-1404-9
  本期目录
Van der Waals epitaxy of type-II band alignment CsPbI3/TMDC heterostructure for optoelectronic applications
Chang Lu1, Shunhui Zhang1, Meili Chen1, Haitao Chen2, Mengjian Zhu2, Zhengwei Zhang1, Jun He1, Lin Zhang1(), Xiaoming Yuan1()
1. Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics, Central South University, Changsha 410083, China
2. College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China
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Abstract

Van der Waals epitaxy allows heterostructure formation without considering the lattice match requirement, thus is a promising method to form 2D/2D and 2D/3D heterojunction. Considering the unique optical properties of CsPbI3 and transition metal dichalcogenides (TMDCs), their heterostructure present potential applications in both photonics and optoelectronics fields. Here, we demonstrate selective growth of cubic phase CsPbI3 nanofilm with thickness as thin as 4.0 nm and Zigzag/armchair orientated nanowires (NWs) on monolayer WSe2. Furthermore, we show growth of CsPbI3 on both transferred WSe2 on copper grid and WSe2 based optoelectrical devices, providing a platform for structure analysis and device performance modification. Transmission electron microscopy (TEM) results reveal the epitaxial nature of cubic CsPbI3 phase. The revealed growth fundamental of CsPbI3 is universal valid for other two-dimensional substrates, offering a great advantage to fabricate CsPbI3 based van der Waals heterostructures (vdWHs). X-ray photoelectron spectroscopy (XPS) and optical characterization confirm the type-II band alignment, resulting in a fast charger transfer process and the occurrence of a broad emission peak with lower energy. The formation of WSe2/CsPbI3 heterostructure largely enhance the photocurrent from 2.38 nA to 38.59 nA. These findings are vital for bottom-up epitaxy of inorganic semiconductor on atomic thin 2D substrates for optoelectronic applications.

Key wordsvan der Waals epitaxy    band alignment    growth fundamental    charge transfer    photodetector
收稿日期: 2024-12-09      出版日期: 2024-05-24
Corresponding Author(s): Lin Zhang,Xiaoming Yuan   
 引用本文:   
. [J]. Frontiers of Physics, 2024, 19(5): 53206.
Chang Lu, Shunhui Zhang, Meili Chen, Haitao Chen, Mengjian Zhu, Zhengwei Zhang, Jun He, Lin Zhang, Xiaoming Yuan. Van der Waals epitaxy of type-II band alignment CsPbI3/TMDC heterostructure for optoelectronic applications. Front. Phys. , 2024, 19(5): 53206.
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https://academic.hep.com.cn/fop/CN/10.1007/s11467-024-1404-9
https://academic.hep.com.cn/fop/CN/Y2024/V19/I5/53206
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