Key electronic parameters of 2H-stacking bilayer MoS2 on sapphire substrate determined by terahertz magneto-optical measurement in Faraday geometry

doi:10.1007/s11467-024-1425-4

Frontiers of Physics

2024, Vol. 19

Issue (6): 63204 https://doi.org/10.1007/s11467-024-1425-4

本期目录

Key electronic parameters of 2H-stacking bilayer MoS₂ on sapphire substrate determined by terahertz magneto-optical measurement in Faraday geometry

Xingjia Cheng^1,², Wen Xu^1,^3,⁴(

), Hua Wen^1,², Jing Zhang^1,², Heng Zhang^1,², Haowen Li⁴, Francois M. Peeters^4,⁵

¹. Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
². University of Science and Technology of China, Hefei 230026, China
³. School of Physics and Astronomy and Yunnan Key Laboratory of Quantum Information of Yunnan Province, Yunnan University, Kunming 650091, China
⁴. Micro Optical Instruments Inc., Shenzhen 518118, China
⁵. Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium

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Abstract：

Bilayer (BL) transition metal dichalcogenides (TMDs) are important materials in valleytronics and twistronics. Here we study terahertz (THz) magneto-optical (MO) properties of n-type 2H-stacking BL molybdenum sulfide (MoS₂) on sapphire substrate grown by chemical vapor deposition. The AFM, Raman spectroscopy and photoluminescence are used for characterization of the samples. Applying THz time-domain spectroscopy (TDS), in combination with polarization test and the presence of magnetic field in Faraday geometry, THz MO transmissions through the sample are measured from 0 to 8 T at 80 K. The complex right- and left-handed circular MO conductivities for 2H-stacking BL MoS₂ are obtained. Through fitting the experimental results with theoretical formula of MO conductivities for an electron gas, generalized by us previously through the inclusion of photon-induced electronic backscattering effect, we are able to determine magneto-optically the key electronic parameters of BL MoS₂, such as the electron density $n e$ , the electronic relaxation time $τ$ , the electronic localization factor $c$ and, particularly, the effective electron mass $m ∗$ around $Q$ -point in between the $K$ - and $Γ$ -point in the electronic band structure. The dependence of these parameters upon magnetic field is examined and analyzed. This is a pioneering experimental work to measure $m ∗$ around the $Q$ -point in 2H-stacking BL MoS₂ and the experimental value is very close to that obtained theoretically. We find that $n e / τ / ∣ c ∣ / m ∗$ in 2H-stacking BL MoS₂ decreases/increases/decreases/increases with increasing magnetic field. The results obtained from this study can be benefit to us in gaining an in-depth understanding of the electronic and optoelectronic properties of BL TMD systems.

Key words： bilayer MoS₂ terahertz time-domain spectroscopy magneto-optical conductivities key electronic parameters effective electron mass

收稿日期: 2024-01-27 出版日期: 2024-07-17

Corresponding Author(s): Wen Xu

引用本文:

. [J]. Frontiers of Physics, 2024, 19(6): 63204.
Xingjia Cheng, Wen Xu, Hua Wen, Jing Zhang, Heng Zhang, Haowen Li, Francois M. Peeters. Key electronic parameters of 2H-stacking bilayer MoS₂ on sapphire substrate determined by terahertz magneto-optical measurement in Faraday geometry. Front. Phys. , 2024, 19(6): 63204.

链接本文:

https://academic.hep.com.cn/fop/CN/10.1007/s11467-024-1425-4
https://academic.hep.com.cn/fop/CN/Y2024/V19/I6/63204

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