Progress in the preparation and physical properties of two-dimensional Cr-based chalcogenide materials and heterojunctions
Xiulian Fan1, Ruifeng Xin1, Li Li2,3, Bo Zhang4, Cheng Li1, Xilong Zhou1, Huanzhi Chen1, Hongyan Zhang4, Fangping OuYang1,4,5, Yu Zhou1,5()
1. School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha 410083, China 2. Jincheng Research Institute of Opto-mechatronics Industry, Jincheng 048000, China 3. Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems, Jincheng 048000, China 4. School of Physical Science and Technology, Xinjiang University, Urumqi 830046, China 5. State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China
Two-dimensional transition metal dichalcogenides (TMDs) exhibit promising application prospects in the domains of electronic devices, optoelectronic devices and spintronic devices due to their distinctive energy band structures and spin−orbit coupling properties. Cr-based chalcogenides with narrow or even zero bandgap, covering from semiconductors to metallic materials, have considerable potential for wide-band photodetection and two-dimensional magnetism. Currently, the preparation of 2D CrXn (X = S, Se, Te) nanosheets primarily relies on chemical vapor deposition (CVD) and molecule beam epitaxy (MBE), which enable the production of high-quality large-area materials. This review article focuses on recent progress of 2D Cr-based chalcogenides, including unique crystal structure of the CrXn system, phase-controlled synthesis, and heterojunction construction. Furthermore, a detailed introduction of room-temperature ferromagnetism and electrical/optoelectronic properties of 2D CrXn is presented. Ultimately, this paper summarizes the challenges associated with utilizing 2D Cr-based chalcogenides in preparation strategies, optoelectronics devices, and spintronic devices while providing further insights.
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