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Plasma-exfoliated g-C3N4 with oxygen doping: tailoring photocatalytic properties |
Yuxin Li, Junxin Guo, Rui Han, Zhao Wang() |
National Engineering Research Centre of Industry Crystallization Technology, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China |
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Abstract Heteroatom doping and defect engineering have been proposed as effective ways to modulate the energy band structure and improve the photocatalytic activity of g-C3N4. In this work, ultrathin defective g-C3N4 was successfully prepared using cold plasma. Plasma exfoliation reduces the thickness of g-C3N4 from 10 nm to 3 nm, while simultaneously introducing a large number of nitrogen defects and oxygen atoms into g-C3N4. The amount of doped O was regulated by varying the time and power of the plasma treatment. Due to N vacancies, O atoms formed strong bonds with C atoms, resulting in O doping in g-C3N4. The mechanism of plasma treatment involves oxygen etching and gas expansion. Photocatalytic experiments demonstrated that appropriate amount of O doping improved the photocatalytic degradation of rhodamine B compared with pure g-C3N4. The introduction of O optimized the energy band structure and photoelectric properties of g-C3N4. Active species trapping experiments revealed ·O2– as the main active species during the degradation.
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Keywords
graphitic carbon nitride
cold plasma
oxygen doping
nitrogen defect
visible-light photocatalysis
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Corresponding Author(s):
Zhao Wang
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Just Accepted Date: 06 November 2023
Issue Date: 03 January 2024
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