Excitonic devices based on two-dimensional transition metal dichalcogenides van der Waals heterostructures

doi:10.1007/s11705-023-2382-0

Front. Chem. Sci. Eng.

2024, Vol. 18

Issue (2) : 16 https://doi.org/10.1007/s11705-023-2382-0

Excitonic devices based on two-dimensional transition metal dichalcogenides van der Waals heterostructures

Yulun Liu¹, Yaojie Zhu², Zuowei Yan¹, Ruixue Bai¹, Xilin Zhang¹, Yanbo Ren¹, Xiaoyu Cheng¹, Hui Ma²(

), Chongyun Jiang¹(

)

¹. College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China
². School of Physical Science and Technology, Tiangong University, Tianjin 300387, China

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Abstract

Excitonic devices are an emerging class of technology that utilizes excitons as carriers for encoding, transmitting, and storing information. Van der Waals heterostructures based on transition metal dichalcogenides often exhibit a type II band alignment, which facilitates the generation of interlayer excitons. As a bonded pair of electrons and holes in the separation layer, interlayer excitons offer the chance to investigate exciton transport due to their intrinsic out-of-plane dipole moment and extended exciton lifetime. Furthermore, interlayer excitons can potentially analyze other encoding strategies for information processing beyond the conventional utilization of spin and charge. The review provided valuable insights and recommendations for researchers studying interlayer excitonic devices within van der Waals heterostructures based on transition metal dichalcogenides. Firstly, we provide an overview of the essential attributes of transition metal dichalcogenide materials, focusing on their fundamental properties, excitonic effects, and the distinctive features exhibited by interlayer excitons in van der Waals heterostructures. Subsequently, this discourse emphasizes the recent advancements in interlayer excitonic devices founded on van der Waals heterostructures, with specific attention is given to the utilization of valley electronics for information processing, employing the valley index. In conclusion, this paper examines the potential and current challenges associated with excitonic devices.

Keywords excitonic devices van der Waals heterostructures transition metal dichalcogenides interlayer excitons valley-Hall effect optoelectronics

Corresponding Author(s): Hui Ma,Chongyun Jiang

Just Accepted Date: 21 November 2023 Issue Date: 03 January 2024

Cite this article:

Yulun Liu,Yaojie Zhu,Zuowei Yan, et al. Excitonic devices based on two-dimensional transition metal dichalcogenides van der Waals heterostructures[J]. Front. Chem. Sci. Eng., 2024, 18(2): 16.

URL:

https://academic.hep.com.cn/fcse/EN/10.1007/s11705-023-2382-0
https://academic.hep.com.cn/fcse/EN/Y2024/V18/I2/16

Fig.1 Structure and electronic properties of TMDs. (a) Atomic structure of single-layer TMDs: trigonal prismatic 2H phase, distorted octahedral 1T phase, orthorhombic T_d phase, monoclinic 1T′ phase, and P_e phase. Reprinted with permission from ref [43], copyright 2023, John Wiley & Sons Inc. (b) The evolution of the band structure of monolayer MoS₂ from 1H to 1T′. Reprinted with permission from ref [42], copyright 2021, Royal Society of Chemistry. (c) The evolution of the band structure of 2H-MoS₂ from bulk to monolayer (The red (blue) curve indicates the conduction band (valence band), the arrows indicate the transition paths, and the dashed line serves as a contrast to the solid line). Reprinted with permission from ref [44], copyright 2017, Springer Nature. (d) Illustration of the band structure of monolayer 2H-MoS₂, displaying the spin splitting of the band structure at the K and K′ points on the corners of the Brillouin zone (The colors orange and blue are indicative of spin polarization in the upward and downward directions, respectively). Reprinted with permission from ref [44], copyright 2017, Springer Nature. (e) Optical absorption and PL spectra of monolayer MoS₂ at 14 K (Upper panel: differential reflectance spectra showing narrow A-exciton and broad B-exciton features. The red, yellow and green arrows represent the three different photon energy used to excite the sample in the PL measurement. Lower panel: PL spectrum for 532 nm excitation. A, B excitons and lower energy localized state excitons can be identified from the spectrum). Reprinted with permission from ref [48], copyright 2012, Springer Nature. (f) Schematic of bright and dark excitons based on monolayer WX₂, MoX₂, with arrows indicating the spin direction. The optical transitions at the lowest energy of the K valley in monolayer WX₂ (MoX₂) are in the dark (bright) state.

Fig.2 Excitonic effects in monolayer TMDs. (a) Two exciton types: the Frenkel type and the Wannier type. (b) The exciton binding energy E_b is related to the optical band gap E_hν and the electronic band gap E_g. (c) Hexagonal Brillouin zone and the optical selection rule for the K(K′) valley. the K(K′) valley can be excited by σ⁺ (σ^–) circularly polarized light. (d, e) Modulation of valley pseudospin by: optical [57], electrical filed [58], and magnetic field [59], respectively. Reprinted with permission from ref [57], copyright 2015, Springer Nature, ref [58], copyright 2022, Springer Nature, and ref [59], copyright 2015, Springer Nature.

Fig.3 IXs in TMDs vdW heterostructures. (a) Schematic representation of IXs in bulk TMDs. The IXs are spatially separated with electrons and holes in different layers. Reprinted with permission from ref [68], copyright 2018, Royal Society of Chemistry. (b) Calculations of the energy band arrangement in a single layer of TMDs (The bars (line-dot plots) represent the CBM (red) and VBM (blue) values obtained from the PBE (HSE06) calculations. The positions of CBM and VBM in the Brillouin zone are shown in the picture). Reprinted with permission from ref [75], copyright 2016, American Physical Society. (c) PL spectrum of the WSe₂/MoSe₂ heterostructure (IXs is located at ~1.4 eV (red line). The orange spectrum shows the PL of the intralayer exciton with an integration time of 100 times longer, and the intensity of the intralayer exciton is significantly quenched. The inset shows the exciton PL spectra for monolayer MoSe₂ (purple) and WSe₂ (green)). Reprinted with permission from ref [90], 2021, Springer Nature. (d) Schematic of charge transfer in type II heterostructures. Reprinted with permission from ref [110], copyright 2017, Walter de Gruyter. (e) PLE spectra of the WSe₂/MoSe₂ heterostructure. The PLE intensity graphs show two prominent resonances at 1.64 and 1.72 eV corresponding to the monolayer MoSe₂ and WSe₂ intralayer exciton states. Reprinted with permission from ref [94], copyright 2021, Springer Nature. (f) Schematic of the WSe₂/MoSe₂ vdW heterostructure of a bilayer h-BN insertion. Reprinted with permission from ref [24], copyright 2022, American Chemical Society. (g) Two stacking patterns of vdW heterostructures: 0° stacking (3R stacking) and 60° stacking (2H stacking). Reprinted with permission from ref [111], copyright 2016, Royal Society of Chemistry.

Fig.4 Recent progress in vdW heterostructure fabrication and synthesis. (a) TMDs heterobilayers stacked mechanically (top) and grown by CVD (bottom). Reprinted with permission from ref [124], copyright 2022, Springer Nature. (b) STEM images of the heterobilayers with AA (g) and AB (h) stacking. The insets are filtered images. The scale bar is 0.5 nm. Reprinted with permission from ref [113], copyright 2018, Springer Nature. (c) Schematic and optical images of the vertically stacked IP WS₂/MoS₂ heterostructures synthesized at 850 °C (650 °C), showing the bilayer feature and the high yield of the triangular heterostructures. Reprinted with permission from ref [112], copyright 2014, Springer Nature. (d) Schematic process flow for assembly of 2D heterostructures by pick-up and drop-down (PPC, polypropylene carbonate). Reprinted with permission from ref [118], copyright 2016, Springer Nature. (e) Schematic of the Au-assisted exfoliation of 2D materials process. Reprinted with permission from ref [122], copyright 2020, Springer Nature.

Fig.5 Fundamental properties of IXs. (a) Schematic illustration of the IXs dipole moment in MoSe₂/WSe₂ heterostructures under a vertical electric field. Reprinted with permission from ref [146], copyright 2020, Springer Nature. Due to the type II energy band arrangement, electrons and holes are separated in MoSe₂ and WSe₂, respectively, forming permanent OP dipoles. The electron and hole wave functions are depicted as green and violet ellipses, respectively. (b) Stark effect of IXs in MoSe₂/WSe₂ heterostructures [125]. The energy shift is linear under vertical electric field tuning. Reprinted with permission from ref [125], copyright 2019, Springer Nature. (c) Low-temperature PL spectra of IXs in MoSe₂/WSe₂ heterostructures [128]. As the excitation power increases, the IXs density increases and the dipole-dipole repulsion leads to a blue shift in the emission energy (HBL, hetero-bilayer; LIX, localized IX). Reprinted with permission from ref [128], copyright 2020, Springer Nature. (d) PL decay curves of IXs in MoSe₂/WSe₂ heterostructures at temperatures ranging from 5 to 50 K with exciton lifetimes on the order of ns. Reprinted with permission from ref [20], copyright 2023, John Wiley and Sons Inc. (e–g) Landau g-factors for IXs in MoSe₂/WSe₂ heterostructures with twist angles of 57° (e), 20° (f) and 2° (g). Reprinted with permission from ref [105], copyright 2019, Springer Nature.

Fig.6 Typical tuning methods for IXs in TMDs vdW heterostructures. (a) IXs PL spectra versus electric field. Reprinted with permission from ref [33], copyright 2019, American Association for the Advancement of Science. (b) Magneto-PL spectra of IXs. Reprinted with permission from ref [143], copyright 2020, American Chemical Society. (c) Variation of the IXs PL peak energy with twist angle. Reprinted with permission from ref [132], copyright 2019, Springer Nature. (d) Temperature-dependent IXs PL in the WSe₂/MoSe₂ heterostructures. Reprinted with permission from ref [90], copyright 2021, Springer Nature. (e) Power-dependent IXs PL in the WSe₂/MoSe₂ heterostructures. Reprinted with permission from ref [90], copyright 2021, Springer Nature. (f) Room-temperature IXs emissions in free-standing WS₂/WSe₂ heterostructures. Reprinted with permission from ref [129], copyright 2022, Springer Nature. (g) Evolution of the IXs PL spectrum under pressure in a color plot for the WSe₂/MoSe₂ heterostructures. Reprinted with permission from ref [148], copyright 2021, Springer Nature.

Fig.7 IXs trapped in Moiré superlattice potential. (a) Different local atomic arrangements occurred in the MoSe₂/WSe₂ vertical heterostructures with small twist angles (The three highlighted regions correspond to local atomic configurations with threefold rotational symmetry:

R h H

R h X

R h M)

. Reprinted with permission from ref [89], copyright 2019, Springer Nature. (b) K valley excitons follow different optical selection rules depending on the atomic configuration within the Moiré pattern. Reprinted with permission from ref [89], copyright 2019, Springer Nature. (c) Left panel, Moiré potential for IXs transitions, showing a local minimum at the position; right panel, spatial plot of the optical selection rule for K-valley excitons; the high symmetry points are circularly polarized and the region in between is elliptically polarized. Reprinted with permission from ref [89], copyright 2019, Springer Nature. (d) Schematic of an exciton trapped in a Moiré potential. Reprinted with permission from ref [105], copyright 2019, Springer Nature. (e) Comparison of IXs PL in MoSe₂/WSe₂ heterostructures with a twist angle of 2° at excitation powers of 10 μW (dark red) and 20 nW (blue). The inset shows the linewidth of Moiré excitons of about 100 μeV at an excitation power of 20 nW. Reprinted with permission from ref [105], copyright 2019, Springer Nature. (f) Temperature-dependent differential reflectance spectra of Moiré excitons X1 and X2 in WS₂/MoSe₂ heterostructures (The black dashed line is the eye guide. The intensity of the two exciton states decreases with increasing temperature). Reprinted with permission from ref [157], copyright 2021, Springer Nature.

Fig.8 IX lasers. (a) The TMDs vdW heterostructure exhibits a type II energy band alignment, resulting in a three-level energy system conducive to laser emission. Reprinted with permission from ref [166], copyright 2019, Springer Nature. (b) Schematic diagram of the laser device, consists of a MoSe₂/WSe₂ heterostructure integrated into a silicon nitride grating resonator. Reprinted with permission from ref [166], copyright 2019, Springer Nature. (c) IXs laser emission at 5 K (The shaded boxes indicate the spectral range of IXs, MoSe₂, and WSe₂ exciton emission. The IXs laser demonstrates a remarkably narrow linewidth, measuring only 2 meV). Reprinted with permission from ref [166], copyright 2019, Springer Nature. (d) Moiré MoSe₂/WSe₂ heterostructure with a double gate [144]. An illustration of a Moiré superlattice with a twist angle of ~60° is shown in the dashed box (The Moiré superlattice is indicated as a solid black line, and the three circles (red, blue, and green) are indicated in three localized atomic configurations with threefold rotational symmetry). Reprinted with permission from ref [144], copyright 2020, American Association for the Advancement of Science. (e) The second-order correlation function g⁽²⁾(τ) for a single emitter at 1.401 eV is shown in (f). Reprinted with permission from ref [144], copyright 2020, American Association for the Advancement of Science. (f) PL spectrum of Moiré IXs in MoSe₂/WSe₂ heterostructure at 4 K. Reprinted with permission from ref [144], copyright 2020, American Association for the Advancement of Science. (g) Exciton laser emission from a MoS₂/WSe₂ Moiré heterostructure integrated with a silicon topological nanocavity. The Moiré exciton laser exhibits the highest spectral coherence (< 0.1 nm linewidth) compared to other 2D material-based laser systems. Reprinted with Permission from ref [168], copyright 2023, arXiv: 2302.01266.

Fig.9 IX channels. (a) Schematic diagram of an exciton transistor with exciton flux controlled by the top three gate voltages; (b, c) exciton energy maps (b) are calculated for the ON and OFF states of the exciton flow (c) as shown on the left and right, respectively; (d) gate dependence of the optical excitation on/off ratio at 3 μm from the excitation center. Reprinted with permission from ref [169], copyright 2018, Springer Nature. (e) Optically gated IXs time-resolved PL (The blue (cyan) line shows the PL of the IXs generated by the signal laser when the control laser is off (on)); (f) schematic of the cartoon of the IXs flow, where the transport of the IXs flow is determined by the control laser. Reprinted with permission from ref [24], copyright 2022, American Chemical Society. (g, h) Drift of IXs in real space when the SAW is (g) closed and (h) open (Inset: illustration of free diffusion and SAW-driven drift of IXs). Reprinted with permission from ref [170], copyright 2022, Springer Nature.

Fig.10 IX Photodetectors. (a) WS₂/HfS₂ device structure illustration. On a doped silicon substrate, heterostructures made of layers of WS₂ with varying HfS₂ thicknesses are stacked on top of one another; (b) schematic illustration of the energy band bending at the heterostructures? interface (electron-hole accumulation at the interface); (c) a comparison of the peak receptivity of WS₂/HfS₂ devices to other previously reported top-performing 2D-based photodetectors in the visible and infrared spectrum (I_device = 0.5 nW, V_g = 0 V and V_ds = ? 1.5 V). Reprinted with permission from ref [172], Springer Nature. (d) Schematic of the configuration of three WSe₂/ReS₂ heterodyne devices (Nos. 1–3) and the position of the focusing laser spot; (e) histogram showing the anisotropy ratios of the three devices (Nos.1–3) in all cases; (f) temporal optical response of a single optical switching cycle for devices (Nos. 1–3). Reprinted with permission from ref [173], copyright 2023, Wiley-VCH Verlag.

Fig.11 VHE transistor based on IXs. (a) VHE as shown in MoS₂/WSe₂ heterostructures; the electric field E in the plane and the strange speed of the valley and layer are both caused by the separation of the carrier layers; (b) setup for an experiment to measure V_H; (c) an optical picture of the MoS₂/WSe₂ sample with the electrodes labeled; (d) an image of the sample is seen in the back reflection (The red dot is the laser excitation position); (e) VHE was seen at room temperature (The differences between the V_H recorded at right and left circular polarization (RL), left and right circular polarization (LR), and horizontal and vertical polarization (HV) are shown by the black, red, and blue symbols, respectively); (f) V_H value calculated based on V_x and V_g; (g) linear fitting (V_H = α_HV_x + β_H) of V_H vs V_x at V_g = 23.50 V (black line) and V_g = 28.25 V (red line); black (red) dashed line corresponds to black (red) symbols in b; (h) V_g-dependent values of α_H (proportional to VHE) and β_H (proportional to CPC). Reprinted with permission from ref [179], copyright 2022, Springer Nature.

Fig.12 Valley-addressable memory based on IXs. (a) Illustrates of the IXs and dark exciton in MoSe₂/WSe₂ heterostructures (The IXs (dark excitons) are illustrated as solid black (dashed) ellipses. The dark exciton valley scattering is shown by the gray arrowed curves, while spin-up (spin-down) conduction and valence band scattering is shown by the red (blue) curves). Reprinted permission from ref [23], copyright 2018, Springer Nature. (b, c) Time-resolved PL and valley polarization at (b) Bz = 0 T and (c) Bz = –3 T. Reprinted permission from ref [23], copyright 2018, Springer Nature. (d) Schematic of the WS₂/WSe₂ heterostructures. Reprinted with permission from ref [181], copyright 2022, Springer Nature. (e) Schematic representation of the spin-singlet state (IXS) and spin-triplet state (IXT), respectively. Reprinted with permission from ref [181], copyright 2022, Springer Nature. (f) Degree of absolute circular polarization of IXs as a function of V_g. Doping with electrons or holes affects the valley-depolarization times, which consequently leads to the interlayer hysteresis. Reprinted with permission from ref [181], copyright 2022, Springer Nature. (g) Time-dependent IXs emission characteristics. The PL intensity corresponding to IXS (IXT) at 1.40 eV (1.42 eV) can be used as bits 0 (1). Writing and erasing voltages last for 3 min, while reading lasts for 64 min. Reprinted with permission from ref [181], copyright 2022, Springer Nature.

Fig.13 Valley polarization switch based on IXs. (a) Diagram of the MoSe₂/WSe₂ heterostructure device structure; (b) The IXs serve as the basis for polarization switching actions (ΔI_RL = I_R – I_L as a function of the gate voltage V_TG). Reprinted with permission from ref [125], copyright 2019, Springer Nature. (c) Schematic of the SiO₂ cavity is placed on the top of the WSe₂/WS₂ heterostructure; (d) heterostructure band alignment via R-stacking. The black and purple elliptical dashed lines show the formation of IXS and IXT, respectively; (e) images of IXT (left) and IXS (right) emission in the back focal plane. Excited laser polarization is shown by the white arrow. P-polarized and s-polarized PL are extracted from the left and bottom panels in each image. Reprinted with permission from ref [182], copyright 2023, American Chemical Society.

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