|
|
High-quality industrial n-type silicon wafers with an efficiency of over 23% for Si heterojunction solar cells |
Fanying MENG1(),Jinning LIU1,Leilei SHEN1,Jianhua SHI1,Anjun HAN1,Liping ZHANG1,Yucheng LIU1,Jian YU1,Junkai ZHANG2,Rui ZHOU2,Zhengxin LIU1 |
1. Research Center for New Energy Technology, Shanghai Institute of Microsystem and Information Technology (SIMIT), Shanghai 200050, China 2. Xi’an Longi Silicon Materials Corp., Xi’an 710100, China |
|
|
Abstract n-type CZ-Si wafers featuring longer minority carrier lifetime and higher tolerance of certain metal contamination can offer one of the best Si-based solar cells. In this study, Si heterojuction (SHJ) solar cells which was fabricated with different wafers in the top, middle and tail positions of the ingot, exhibited a stable high efficiency of>22% in spite of the various profiles of the resistivity and lifetime, which demonstrated the high material utilization of n-type ingot. In addition, for effectively converting the sunlight into electrical power, the pyramid size, pyramid density and roughness of surface of the Cz-Si wafer were investigated by scanning electron microscope (SEM) and transmission electron microscope (TEM). Furthermore, the dependence of SHJ solar cell open-circuit voltage on the surface topography was discussed, which indicated that the uniformity of surface pyramid helps to improve the open-circuit voltage and conversion efficiency. Moreover, the simulation revealed that the highest efficiency of the SHJ solar cell could be achieved by the wafer with a thickness of 100 µm. Fortunately, over 23% of the conversion efficiency of the SHJ solar cell with a wafer thickness of 100 µm was obtained based on the systematic optimization of cell fabrication process in the pilot production line. Evidently, the large availability of both n-type ingot and thinner wafer strongly supported the lower cost fabrication of high efficiency SHJ solar cell.
|
Keywords
n-type Cz-Si
thinner wafer
surface texture
high efficiency
SHJ solar cell
|
Corresponding Author(s):
Fanying MENG
|
Just Accepted Date: 12 October 2016
Online First Date: 07 November 2016
Issue Date: 16 November 2016
|
|
1 |
Masuko K, Shigematsu M, Hashiguchi T, Fujishima D, Kai M, Yoshimura N, Yamaguchi T, Ichihashi Y, Mishima T, Matsubara N, Yamanishi T, Takahama T, Taguchi M, Maruyama E, Okamoto S. Achievement of more than 25% conversion efficiency with crystalline silicon heterojunction solar cell. IEEE Journal of Photovoltaics, 2014, 4(6): 1433–1435
|
2 |
Adachi D, Hernandez J L, Yamamoto K. Impact of carrier recombination on fill factor for large area heterojunction crystalline silicon solar cell with 25.1% efficiency. Applied Physics Letters, 2015, 107(23):233506
|
3 |
Green M A, Emery K, Hishikawa Y, Warta W, Dunlop E D. Solar cell efficiency tables (version 48). Progress in Photovoltaics: Research and Applications, 2016, 24: 905–913
|
4 |
Glunz S. Crystalline silicon photovoltaics from the past to the future. In: The 25th International Photovoltaic Science and Engineering Conference. Busan, Korea, 2015
|
5 |
Sheng J, Wang W, Yuan S, Cai W, Sheng Y, Chen Y, Ding J, Yuan N, Feng Z, Verlinden P J. Development of a large area n-type PERT cell with high efficiency of 22% using industrially feasible technology. Solar Energy Materials and Solar Cells, 2016, 152: 59–64
|
6 |
Meng F, Shi J, Liu Z, Cui Y, Lu Z, Feng Z. High mobility transparent conductive W-doped In2O3 thin films prepared at low substrate temperature and its application to solar cells. Solar Energy Materials and Solar Cells, 2014, 122(3): 70–74
|
7 |
Liu W, Meng F, Zhang X, Liu Z. Evolution of a native oxide layer at the a-Si:H/c-Si interface and its influence on a silicon heterojunction solar cell. Applied Materials and Interfaces, 2015, 51(3): 748–751
|
8 |
Seif J P, Krishnamani G, Demaurex B, Ballif C, Wolf S D. Amorphous/crystalline silicon interface passivation: ambient-temperature dependence and implications for solar cell performance. IEEE Journal of Photovoltaics, 2015, 5(3): 718–724
|
9 |
Mews M, Schulze T F, Mingirulli N, Korte L. Hydrogen plasma treatments for passivation of amorphous-crystalline silicon-heterojuncitons on surfaces promoting epitaxy. Applied Physics Letters, 2013, 102(12): 122106
|
10 |
Geissbühler J, De Wolf S, Demaurex B, Seif J P, Alexander D T L, Barraud L, Ballif C. Amorphous/crystalline silicon interface defects induced by hydrogen plasma treatments. Applied Physics Letters, 2013, 102(23): 231604
|
11 |
Lee S J, Kim S H, Kim D W, Kim K H, Kim B K, Jang J. Effect of hydrogen plasma passivation on performance of HIT solar cells. Solar Energy Materials and Solar Cells, 2011, 95(1): 81–83
|
12 |
Zhang L, Liu W, Guo W, Bao J, Zhang X, Liu J, Wang D, Meng F, Liu Z. Interface processing of amorphous-crystallinesilicon heterojunction prior to the formation of amorphous-to-nanocrystalline transition phase. IEEE Journal of Photovoltaics, 2016, 6(3): 604–610
|
13 |
Edwards M, Bowden S, Das U, Burrows M. Effect of texturing and surface preparation on lifetime and cell performance in heterojunction silicon solar cells. Solar Energy Materials and Solar Cells, 2008, 92(11): 1373–1377
|
14 |
Fesquet L, Olibet S, Damon-Lacoste J, De WolfS, Hessler-wyser A, Monachorr C, Ballif C. Modification of textured silicon wafer surface morphology for fabrication of heterojunction solar cell with open circuit voltage over 700 mV. In: 34th IEEE Photovoltaic Specialists Conference. Philadelphia, USA, 2009
|
15 |
Shen L, Meng F, Liu Z. Roles of the Fermi level of doped a-Si:H and band offsets at a-Si:H/c-Si interfaces in n-type HIT solar cells. Solar Energy, 2013, 97(5): 168–175
|
16 |
Mishima T, Taguchi M, Sakata H, Maruyama E. Development status of high-efficiency HIT solar cells. Solar Energy Materials and Solar Cells, 2011, 95(1): 18–21
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
|
Shared |
|
|
|
|
|
Discussed |
|
|
|
|