Crystallographic orientation effect on cutting-based single atomic layer removal

doi:10.1007/s11465-020-0599-x

Front. Mech. Eng.

2020, Vol. 15

Issue (4) : 631-644 https://doi.org/10.1007/s11465-020-0599-x

RESEARCH ARTICLE

Crystallographic orientation effect on cutting-based single atomic layer removal

Wenkun XIE¹, Fengzhou FANG^1,²(

)

¹. Centre of Micro/Nano Manufacturing Technology (MNMT-Dublin), University College Dublin, Dublin 4, Ireland
². State Key Laboratory of Precision Measuring Technology and Instruments, Centre of Micro/Nano Manufacturing Technology (MNMT), Tianjin University, Tianjin 300072, China

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Abstract

The ever-increasing requirements for the scalable manufacturing of atomic-scale devices emphasize the significance of developing atomic-scale manufacturing technology. The mechanism of a single atomic layer removal in cutting is the key basic theoretical foundation for atomic-scale mechanical cutting. Material anisotropy is among the key decisive factors that could not be neglected in cutting at such a scale. In the present study, the crystallographic orientation effect on the cutting-based single atomic layer removal of monocrystalline copper is investigated by molecular dynamics simulation. When undeformed chip thickness is in the atomic scale, two kinds of single atomic layer removal mechanisms exist in cutting-based single atomic layer removal, namely, dislocation motion and extrusion, due to the differing atomic structures on different crystallographic planes. On close-packed crystallographic plane, the material removal is dominated by the shear stress-driven dislocation motion, whereas on non-close packed crystallographic planes, extrusion-dominated material removal dominates. To obtain an atomic, defect-free processed surface, the cutting needs to be conducted on the close-packed crystallographic planes of monocrystalline copper.

Keywords ACSM single atomic layer removal mecha-nism crystallographic orientation effect mechanical cutting Manufacturing III

Corresponding Author(s): Fengzhou FANG

Just Accepted Date: 24 September 2020 Online First Date: 03 November 2020 Issue Date: 02 December 2020

Cite this article:

Wenkun XIE,Fengzhou FANG. Crystallographic orientation effect on cutting-based single atomic layer removal[J]. Front. Mech. Eng., 2020, 15(4): 631-644.

URL:

https://academic.hep.com.cn/fme/EN/10.1007/s11465-020-0599-x
https://academic.hep.com.cn/fme/EN/Y2020/V15/I4/631

Tab.1 Comparison of mechanical cutting at different scales

Fig.1 Molecular dynamics cutting model.

Fig.2 Chip formation on different crystallographic planes at the undeformed chip thickness of 0.2 nm and cutting edge radius of 2 nm. (a) Cu(111); (b) Cu(001); (c) Cu(110). The workpiece atoms are colored by their atomic displacements in the cutting direction (x-ADs).

Fig.3 Simulation results on different crystallographic planes. (a) Cu(111); (b) Cu(001); (c) Cu(110). The cutting tool is omitted to clearly show the surface morphology of the processed surface.

Fig.4 Atomic displacement vectors of workpiece materials on different crystallographic surfaces. (a) Cu(111); (b) Cu(110); (c) Cu(001).

Fig.5 Crystallographic orientation effect on the first principle stress distribution. (a) Cu(111); (b) Cu(110); (c) Cu(001).

Fig.6 Crystallographic orientation effect on vertical principle stress distribution. (a) Cu(111); (b) Cu(110); (c) Cu(001).

Fig.7 Crystallographic orientation effect on the shear stress distribution of workpiece. (a) Cu(111); (b) Cu(110); (c) Cu(001).

Fig.8 Subsurface defect structure on each processed surface. (a) Cu(111); (b) Cu(110); (c) Cu(001). The workpiece atoms are colored according to their centrosymmetry parameters (CSP). The atoms with a CSP of less than 3 are omitted to clearly visualize the subsurface defect.

Fig.9 Schematic for the material removal mechanisms on different crystalline planes. (a) Close-packed crystal plane; (b) other crystal planes.

Fig.10 Schematic for three types of dislocation generation and motion in ACS cutting. (a) Cu(111); (b) Cu(110); (c) Cu(001).

Fig.11 Atomic arrangement structures of (111), (001), and (110) surfaces of the FCC metal materials. (a) Cu(111); (b) Cu(001); (c) Cu(110).

Fig.12 Force condition of the targeted atom in round-edged tool-based cutting. (a) Cu(111); (b) Cu(110); (c) Cu(001).

Fig.13 Plots of cutting force versus cutting distance on each analyzed crystal planes. (a) Cu(111); (b) Cu(001); (c) Cu(110).

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