Research on VO<sub><italic>x</italic></sub> uncooled infrared bolometer based on porous silicon

doi:10.1007/s12200-012-0224-7

Front Optoelec

2012, Vol. 5

Issue (3) : 292-297 https://doi.org/10.1007/s12200-012-0224-7

RESEARCH ARTICLE

Research on VO_x uncooled infrared bolometer based on porous silicon

Bin WANG^1,2, Jianjun LAI^1,2(

), Erjing ZHAO¹, Haoming HU¹, Sihai CHEN^1,2

1. School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China; 2. Wuhan National Laboratory for Optoelectronics, Wuhan 430074, China

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Abstract

In this paper, vanadium oxide thin film of TCR of -3.5%/K has been deposited by pulsed DC magnetron sputtering method. The property of this VO_x has been investigated by X-ray diffractometer (XRD) and atomic force microscopy (AFM) in detail. XRD test indicates that this film is composed of V₂O₃, V₃O₅ and VO₂.VO_x microbolometer with infrared (IR) absorbing structure is fabricated based on porous silicon sacrificial layer technology. Optimized micro-bridge structure is designed and carried out to decrease thermal conductance and this structure shows good compatibility with micromachining technology. This kind of bolometer with 74% IR absorption of 8–14 μm, has maximum detectivity of 1.09×10⁹ cm·Hz^1/2/W at 24 Hz frequency and 9.8 μA bias current.

Keywords infrared (IR) porous silicon microbolometer micromachining

Corresponding Author(s): LAI Jianjun,Email:jjlai@mail.hust.edu.cn

Issue Date: 05 September 2012

Cite this article:

Bin WANG,Jianjun LAI,Erjing ZHAO, et al. Research on VO_x uncooled infrared bolometer based on porous silicon[J]. Front Optoelec, 2012, 5(3): 292-297.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-012-0224-7
https://academic.hep.com.cn/foe/EN/Y2012/V5/I3/292

Fig.1 In() dependence on temperature for VO thin film

Fig.2 XRD pattern of vanadium oxide

Fig.3 AFM micrographs of vanadium oxide

Fig.4 Curves of corrosion rate of HF solution versus current density

Fig.5 Curves of depth of porous silicon versus anodizing time

Fig.6 Porous Si contour profile as sacrificial layer after dissolved

Fig.7 Process flow of microbolometer based on porous silicon sacrificial layer. (a) Preparation of porous silicon layer; (b) deposition of supporting layer; (c) deposition and etching of VO; (d) deposition of conduction layer; (e) PECVD films and deposition of TiN absorbing layer; (f) etching of absorbing structure; (g) removal of porous silicon sacrificial layer

Fig.8 Microphotography of microbolometer

Fig.9 Total absorption for microbolometer

Fig.10 Test system for VO bolometer

Fig.11 Curve of responsivity () depended on frequency

Fig.12 Curves of detectivity ()and noise voltage versus frequency

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