InAs/GaAs far infrared quantum ring inter-subband photodetector

doi:10.1007/s12200-014-0361-2

Front Optoelec

2014, Vol. 7

Issue (1) : 84-90 https://doi.org/10.1007/s12200-014-0361-2

RESEARCH ARTICLE

InAs/GaAs far infrared quantum ring inter-subband photodetector

Mohammad KARIMI¹, Kambiz ABEDI²(

), Mahdi ZAVVARI³

1. Department of Electrical Engineering, Mahabad Branch, Islamic Azad University, Mahabad, Iran; 2. Department of Electrical Engineering, Faculty of Electrical and Computer Engineering, Shahid Beheshti University, Tehran 1983963113, Iran; 3. Department of Electrical Engineering, Urmia Branch, Islamic Azad University, Urmia, Iran

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Abstract

In this paper, we presented a numerical analysis of absorption coefficient, dark current and specific detectivity for InAs/GaAs quantum ring inter-subband photodetector (QRIP). 3D Schr?dinger equation was solved using finite difference method and based on effective mass approximation. Dimensions of quantum ring (QR) were considered that inter-subband transition was to be accomplished for radiations of 20 μm. Resonant tunneling (RT) barriers were designed with tunneling probability of unity for electrons with energy of 0.062 meV to lower dark current of conventional QRIP. Numerical analyses show that inclusion of RT barriers can reduce dark current for about two orders of magnitude. Furthermore, specific detectivities for conventional QRIP and RT-QRIP were calculated respectively, and results at different temperatures were compared. It is suggested that specific detectivity for RT-QRIP is one order of magnitude higher than that for conventional QRIP. It is suggested that RT barriers considerably improve the specific detectivity of conventional QRIP at different temperatures.

Keywords quantum ring inter-subband photodetector (QRIP), dark current spacefic detectivity resonant tunneling (RT)

Corresponding Author(s): ABEDI Kambiz,Email:k_abedi@sbu.ac.ir

Issue Date: 05 March 2014

Cite this article:

Mohammad KARIMI,Kambiz ABEDI,Mahdi ZAVVARI. InAs/GaAs far infrared quantum ring inter-subband photodetector[J]. Front Optoelec, 2014, 7(1): 84-90.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-014-0361-2
https://academic.hep.com.cn/foe/EN/Y2014/V7/I1/84

Fig.1 (a) Isosurface of ground eigenstate of InAs/GaAs QR; (b) isosurface of first excited eigenstate of InAs/GaAs QR

Fig.2 Absorption coefficient of QRIP as function of wavelength for different values of homogeneous broadening (inset figure shows absorption coefficient of QRIP versus wavelength for different values of HB when inhomogeneous broadening is 40 meV)

Fig.3 Absorption coefficient of QRIP as function of wavelength for different values of outer radius with = 10 nm and = 2 nm

Fig.4 Dark current of QRIP versus bias voltage for different temperatures

Fig.5 Schematic of RT-QRIP, and the inset depicts one stack of QR layers with RT barriers

Fig.6 Calculated tunneling probability for RT structure

Fig.7 Dark currents of RT-QRIP at different temperatures

Fig.8 Dark currents of conventional QRIP and RT-QRIP versus temperature at 1 V

Fig.9 Specific detectivity of conventional QRIP versus bias voltage for different temperatures

Fig.10 Specific detectivity of RT-QRIP versus bias voltages for different temperatures

Fig.11 Specific detectivity of conventional QRIP and RT-QRIP as function of temperature

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