Interface phonon polariton coupling to enhance graphene absorption

doi:10.1007/s12200-019-0957-7

Front. Optoelectron.

2021, Vol. 14

Issue (4) : 445-449 https://doi.org/10.1007/s12200-019-0957-7

RESEARCH ARTICLE

Interface phonon polariton coupling to enhance graphene absorption

Zhenyao CHEN, Junjie MEI, Ye ZHANG, Jishu TAN, Qing XIONG, Changhong CHEN(

)

Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

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Abstract

Here we present a graphene photodetector of which the graphene and structural system infrared absorptions are enhanced by interface phonon polariton (IPhP) coupling. IPhPs are supported at the SiC/AlN interface of device structure and used to excite interband transitions of the intrinsic graphene under gated-field tuning. The simulation results show that at normal incidence the absorbance of graphene or system reaches up to 43% or closes to unity in a mid-infrared frequency range. In addition, we found the peak-absorption frequency is mainly decided by the AlN thickness, and it has a red-shift as the thickness decreases. This structure has great application potential in graphene infrared detection technology.

Keywords interface phonon polariton (IPhP) infrared absorption enhancement graphene photodetector

Corresponding Author(s): Changhong CHEN

Just Accepted Date: 15 October 2019 Online First Date: 05 December 2019 Issue Date: 06 December 2021

Cite this article:

Zhenyao CHEN,Junjie MEI,Ye ZHANG, et al. Interface phonon polariton coupling to enhance graphene absorption[J]. Front. Optoelectron., 2021, 14(4): 445-449.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-019-0957-7
https://academic.hep.com.cn/foe/EN/Y2021/V14/I4/445

Fig.1 Schematic of device structure. The thickness of SiC layer, graphene layer and BN layer are d_SiC = 350 mm, d_G = 2 nm, d_BN = 13 nm, respectively. d_AlN, which represents the thickness of AlN, is a variable. The Au grating has a period of p = 10 mm, a width of w = 5.72 mm, and a thickness of d_Au = 100 nm

Fig.2 Dielectric constant of SiC in the x direction, i.e., perpendicular to the lattice C-axis (the parallel-directional values are not plotted here). The real part (in black dot) of dielectric constant is negative while the imaginary part (in red triangle) is positive

Fig.3 Effect of different grating period p on the absorbance of graphene. The main absorption peak is located at l= 10.57 mm. The inset shows that the peak location remains unchanged at l = 10.57 mm

Fig.4 Electric field distribution at l = 10.57 mm. The fields are mainly confined within AlN and SiC

Fig.5 Absorbance of the structural system with different AlN thicknesses d_AlN. The inset shows the absorption peak has a red shift as the d_AlN decreases

Fig.6 Graphene absorbance with different AlN thicknesses d_AlN. The inset shows that the absorption peaks locate at l = 10.562, 10.568, 10.574, 10.580, and 10.596 mm are red-shifted with the decrease of AlN thickness

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