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Front. Optoelectron.    2021, Vol. 14 Issue (1) : 64-93    https://doi.org/10.1007/s12200-020-1081-4
REVIEW ARTICLE
Intense terahertz generation from photoconductive antennas
Elchin ISGANDAROV1, Xavier ROPAGNOL1,2, Mangaljit SINGH1, Tsuneyuki OZAKI1()
1. Institut National de la Recherche Scientifique, Centre Énergie, Matériaux Télécommunications (INRS-EMT), Varennes, Québec J3X 1S2, Canada
2. Département de Génie Électrique, École de Technologie Supérieure (ETS), Montréal, Québec H3C 1K3, Canada
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Abstract

In this paper, we review the past and recent works on generating intense terahertz (THz) pulses from photoconductive antennas (PCAs). We will focus on two types of large-aperture photoconductive antenna (LAPCA) that can generate high-intensity THz pulses (a) those with large-aperture dipoles and (b) those with interdigitated electrodes. We will first describe the principles of THz generation from PCAs. The critical parameters for improving the peak intensity of THz radiation from LAPCAs are summarized. We will then describe the saturation and limitation process of LAPCAs along with the advantages and disadvantages of working with wide-bandgap semiconductor substrates. Then, we will explain the evolution of LAPCA with interdigitated electrodes, which allows one to reduce the photoconductive gap size, and thus obtain higher bias fields while applying lower voltages. We will also describe recent achievements in intense THz pulses generated by interdigitated LAPCAs based on wide-bandgap semiconductors driven by amplified lasers. Finally, we will discuss the future perspectives of THz pulse generation using LAPCAs.
Keywords sub-cycle intense terahertz (THz) pulses      ultrafast Ti:sapphire lasers      wide-bandgap semiconductors      large-aperture photoconductive antenna (LAPCA)      phase mask      interdigitated large-aperture photoconductive emitters (ILAPCA)     
Corresponding Author(s): Tsuneyuki OZAKI   
Online First Date: 24 December 2020    Issue Date: 19 April 2021
 Cite this article:   
Elchin ISGANDAROV,Xavier ROPAGNOL,Mangaljit SINGH, et al. Intense terahertz generation from photoconductive antennas[J]. Front. Optoelectron., 2021, 14(1): 64-93.
 URL:  
https://academic.hep.com.cn/foe/EN/10.1007/s12200-020-1081-4
https://academic.hep.com.cn/foe/EN/Y2021/V14/I1/64
Fig.1  Schematic view of a typical large-aperture photoconductive emitter [38]
Fig.2  Calibrated radiated field as a function of optical fluence from a 0.5 mm gap GaAs antenna at bias fields of 4.0, 2.0, and 1.0 kV/cm [13]
crystal EG/eV Ec/(kV·cm−1) m/(cm2·V−1·s−1) tc/ps r/(W·cm−1) K/(W·cm−1·K−1)
SI-GaAs 1.44 <10 9500 2–10 106–108 0.27
LT-GaAs 1.44 10 150–200 0.3–1 106 0.27
diamond 5.46 2000 2800 – 1011–1018 25
GaN 3.40 300 1250 >150 >108 1.3
ZnSe mono 2.67 60 300–600 >500 1012 0.18
6H-SiC 3.23 >500 200–300 1000 >1012 3.7
4H-SiC 3.02 1000 800 <1000 <1012 3.7
Tab.1  Important parameters of semiconductors used for the fabrication of PCAs [47,54–61]
Fig.3  Calculated photocurrent, the amplitude of the radiated electric field and the laser pulse shape as a function of time [69]
Fig.4  THz radiation waveforms from LT-GaAs and SI-GaAs emitters with the excitation by low optical fluence single pulses. The solid lines represent the measured waveforms and the dashed lines represent the calculated waveforms. Emitter material: (a) LT-GaAs annealed at 575°C, (b) LT-GaAs annealed at 600°C, (c) LT-GaAs annealed at 625°C, and (d) SI-GaAs [67]
Fig.5  Optical micrograph of (a) failed antenna, (b) X-ray topography of the device showing considerably grain boundaries and domains as well as electro-migration of gold (arrow) in between the microstrips [82]
Fig.6  (a) Time-domain waveform produced by photoexcitation of the ZnSe THz emitter with 160 mW pump beam and a 230 Vp-p bias voltage. The edge-illuminated PC gap and THz dipole emitter are shown in the inset. (b) Measured peak-to-peak THz field amplitudes as a function of the PC gap bias voltage. The THz waveform amplitudes calculated from the photocurrent transport model are shown in the inset [94]
Fig.7  (a) Normalized waveforms THz pulses emitted by mono- and poly-crystalline ZnSe LAPCAs. (b) Corresponding power spectrums to the THz pulses radiated that is obtained by Fourier spectrum [51]
Fig.8  Fluence dependence of the peak THz electric field from ZnSe single crystal antenna illuminated at 400 and 800 nm [51]
Fig.9  Fluence dependence of peak field of THz radiation from GaAs, ZnSe single crystal, and poly-crystalline ZnSe PCA. Squares are the experimental data, and solid lines are fits to the data [51]
Fig.10  Comparison of bias field dependence of the peak THz electric field for GaAs antenna excited at 800 nm and mono-crystalline ZnSe antenna excited at 400 nm [51]
Fig.11  (a) Normalized and in inset original THz waveforms radiated by 6H- and 4H-SiC LAPCA antennas excited at 400 nm with a fluence of 0.29 mJ/cm2 and biased at 9.25 kV/cm. (b) Their respective normalized amplitude spectra [63]
Fig.12  THz peak electric field versus fluence for a 6H-SiC (a) and 4H-SiC (b) PC antenna excited at 400 nm and biased with three different bias fields. (c) is an expanded scale of the bottom left part of (b), in order to show the quadratic dependence of the field on fluence for the 4H-SiC PC antenna at low excitation fluence [63]
Fig.13  (a) THz peak electric field versus fluence for 6H-SiC PCA excited at 400 and 800 nm, and for 4H-SiC PCA excited at 400 nm and biased at 20 kV/cm. (b) THz peak electric field versus bias field for 6H-SiC PCA excited at 400 nm at 1.7 mJ/cm2 and 800 nm at 6.7 mJ/cm2, and for 4H-SiC PCA excited at 400 nm at 1.1 mJ/cm2 [63]
Fig.14  (a) Experimental configuration. (b) Scaling of the THz energy as a function of the bias field. (c) Optical fluence for 4H-SiC, 6H-SiC, GaN, β-Ga2O3 and ZnSe LAPCAs. (d) Scaling of the square root of THz energy as a function optical fluence [35]
Fig.15  (a) Schematic of THz emitter composed of seven photoconductive antenna units having interdigitated electrode structure. The units are labeled A–G for later reference. (b) Structure of electrodes and shadow mask of each unit [115]
Fig.16  (a) THz waveforms obtained from a conventional LAPCA (thick line), and micro-structured antenna array (thin line) under typical operation conditions. (b) Normalized spectrum of THz fields obtained from conventional large-aperture emitter (thick line), and micro-structured antenna array (thin line) [115]
Fig.17  Evolution of the THz pulse shape for different glass phase mask thickness (0.17, 0.34, 0.51, 0.68, and 1.00 mm thick) of an interdigitated GaAs LAPCA at a bias field of 1.2 kV/cm and a excitation fluence of 14 mJ/cm2 [38]
Fig.18  Schematic and scanning electron microscope images of a large area plasmonic photoconductive source fabricated on a SI-GaAs substrate [29]
Fig.19  (a) Cut view of an interdigitated photoconductive switch. Interdigitated gold electrodes on top of the GaAs layer consist of 4 mm wide electrodes, equally spaced by a distance D = 4 mm. (b) Top view of the intermixed geometry principle (only the first metallic layer is represented). (c) Large area implementation investigated experimentally with total area of the gold finger electrodes is 450 µm × 450 mm. (d) Orientation of the wire-grid polarizer u → with respect to the interdigitated structure directions u→ H, u→ Vfor the emitted field experimental characterization [143]
Fig.20  THz pulses shapes generated from the ZnSe interdigitated LAPCA excited at 400 nm with a fluence of 0.2 mJ/cm2, at a bias field of 10 kV/cm with 0.65 and 1 mm binary mask and a shadow mask. (b) Power spectrum with a shadow mask (blue line), and the 1 mm binary mask (red line). (c) and (d) THz pulse shapes obtained with the 0.65 mm (c) and the 1 mm (d) binary mask on the ZnSe LAPCA [38]
Fig.21  THz waveform acquired by electro-optic sampling (EOS) of emission from ZnSe interdigitated LAPCA with Ti/Au contacts, using a shadow mask, excited with 16 mJ of 400 nm optical pump and biased with 30 kV/cm. (b) Respective amplitude THz spectrum [34]
Fig.22  (a) Amplitude of the transmitted THz pulses through the bare substrate (Eref) and the InGaAs sample (Etrans) with the incident peak field of 190 kV/cm. Inset: corresponding terahertz waveforms, where the blue arrow indicates the propagation direction. (b) Measured field dependence of Etrans and half-cycle duration (amplitude FWHM) as a function of the incident peak field Ein measured in air. (c) Measured transmission spectra at various incident fields. The gray area corresponds to the transmission lower than 1. (d) Calculated transmission spectra based on the described model [146]
Fig.23  Top view of a typical 6H-SiC ILAPCA. Here, the ILAPCA is composed of 38 electrodes with a gap size of 800 µm and a width and length of 1 and 55 mm respectively
Fig.24  (a) Peak electric field of the THz pulses emitted by ZnSe (purple) and 6H-SiC (red) ILAPCAs. (b) Power spectrum of 6H-SiC ILAPCA in frequency range
Fig.25  (a) Photo of the structure of two ILAPCAS on a 4 inch diameter 6H-SiC wafer and the shadow mask. (b) Microscope image of the rounding edge of the ILAPCA structure on the 4H-SiC substrate. (c) Scheme of the experimental set-up. (d) Scaling of the THz energy as a function of the bias electric field for 6H-SiC and 4H-SiC ILAPCAs. And (e) scaling of the THz energy as a function of the laser energy contrast ratio for the 6H-SiC ILAPCA biased at 12.5 kV/cm and pumped with 2.83 mJ/cm2 [35]
Fig.26  (a) Experimental scheme of the Z-scan experiment with the InGaAs sample. (b) Normalized transmission as a function of the Z-scan position for the InGaAs sample and the InP substrate, with a THz pulse energy of 11 mJ. Inset shows the simulated results of the FWHM duration of the THz pulse as a function of the THz peak electric field for a transmission enhancement of 1.7 [35]
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