Bismuth telluride nanostructures: preparation, thermoelectric properties and topological insulating effect

doi:10.1007/s11706-015-0285-9

Front. Mater. Sci.

2015, Vol. 9

Issue (2) : 103-125 https://doi.org/10.1007/s11706-015-0285-9

REVIEW ARTICLE

Bismuth telluride nanostructures: preparation, thermoelectric properties and topological insulating effect

Eric ASHALLEY¹,Haiyuan CHEN²,Xin TONG¹,Handong LI²,Zhiming M. WANG^1,^2,^*(

)

1. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

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Abstract

Bismuth telluride is known to wield unique properties for a wide range of device applications. However, as devices migrate to the nanometer scale, significant amount of studies are being conducted to keep up with the rapidly growing nanotechnological field. Bi₂Te₃ possesses distinctive properties at the nanometer level from its bulk material. Therefore, varying synthesis and characterization techniques are being employed for the realization of various Bi₂Te₃ nanostructures in the past years. A considerable number of these works have aimed at improving the thermoelectric (TE) figure-of-merit (ZT) of the Bi₂Te₃ nanostructures and drawing from their topological insulating properties. This paper reviews the various Bi₂Te₃ and Bi₂Te₃-based nanostructures realized via theoretical and experimental procedures. The study probes the preparation techniques, TE properties and the topological insulating effects of 0D, 1D, 2D and Bi₂Te₃ nanocomposites. With several applications as a topological insulator (TI), the topological insulating effect of the Bi₂Te₃ is reviewed in detail with the time reversal symmetry (TRS) and surface state spins which characterize TIs. Schematics and preparation methods for the various nanostructural dimensions are accordingly categorized.

Keywords thermoelectric property topological insulator (TI) Bi₂Te₃ nanostructure

Corresponding Author(s): Zhiming M. WANG

Issue Date: 23 July 2015

Cite this article:

Eric ASHALLEY,Haiyuan CHEN,Xin TONG, et al. Bismuth telluride nanostructures: preparation, thermoelectric properties and topological insulating effect[J]. Front. Mater. Sci., 2015, 9(2): 103-125.

URL:

https://academic.hep.com.cn/foms/EN/10.1007/s11706-015-0285-9
https://academic.hep.com.cn/foms/EN/Y2015/V9/I2/103

Fig.1 Atomic structures of (a) Bi₂Te₃, (b) PbBi₂Te₄, (c) PbBi₄Te₇, (d) PbBi₆Te₁₀, (e) Sb₂Te₃, and (f) Bi₂Se₃. (Reproduced from Refs. [12–13])

Fig.2 A plot of ZT as a function of temperature within the inclusive year range of 1950–2010. (Reproduced from Ref. [15])

Fig.3 Nanostructures by dimensionality. (Reproduced from Ref. [32])

Fig.4 Schematics depicting the top-down and bottom-up approaches for nanostructures in (a) scale and (b) structure.

Fig.5 TEM images of Bi₂Te₃ particles by Cryogenic grinding at (a) 3 h, (b) 6 h, (c) 10 h, and (d) 15 h with associated electron diffraction pattern and high-resolution. TEM images of the particles after (e) 10 h and (f) 15 h. (g) SEM image of Bi₂Te₃ obtained by wet-chemical synthesis. (h) TEM image of platelets. (i) Single platelet crystallinity (inset). (j) SEM image of powders prepared by the chemical reaction method. (Reproduced from Refs. [33,35–36])

Tab.1 Major syntheses and fabrication techniques for 0D Bi₂Te₃ nano-sized materials

Fig.6 Thermoelectric properties of BiTe_bare, BiTe_101 and BiTe_51 dependent on temperature: (a) electrical conductivity σ; (b) absolute value of Seebeck coefficient S; (c) power factor S²σ; (d) thermal conductivity k (the inset is the lattice part (K_L) of thermal conductivity). (Reproduced from Ref. [39])

Fig.7 (a)(b) SEM images of the Bi₂Te₃ structures. (c) TEM image of a two-string cluster. (d) TEM image of a multi-string cluster hierarchical structure and (inset) associated SAED pattern. (e)(f) TEM images and SAED pattern of Bi₂Te₃ nanotubes. (g)(h)(i)(j) TEM images of Bi₂Se₃ nanowires and nanoribbons with SAED patterns as insets. (Reproduced from Refs. [52–54])

Fig.8 (a)(b) High-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) pattern of nanowires annealed at 400°C. (c) HRTEM and fast Fourier transformation (FFT) images for other selected areas. SEM images of anodized aluminum matrix and Bi₂Te₃ nanowires array: (d) anodized aluminum matrix (AAM) nanopores; (e) Bi₂Te₃ nanowires array (plan view); (f) Bi₂Te₃ nanowires (side view) partially embedded in AAM; (g) Bi₂Te₃ nanowires after dissolved AAM. (Reproduced from Refs. [55–56])

Fig.9 TEM and electron diffraction from parts of the nanowires with the diameter of (a) 13 and 17 nm and (b) 44 nm. (Reproduced from Ref. [57])

Tab.2 Major syntheses and fabrications for 1D Bi₂Te₃ nano-sized materials

Fig.10 (a) Optical image of Bi₂(Se_xTe_1-x)₃ (BST) and atomic force microscopy image (inset) of the central plate. (b) TEM image of Bi₂(Se_xTe_1-x)₃ nanoplate with x = 0.32±0.02. (c) HRTEM image and SAED pattern of the plate. (d)(e)(f) TEM images of the P-type BST nanosheet. (g) SAED pattern for (f). (Reproduced from Refs. [67–68])

Fig.11 (a) Optical image of Bi₂(Se_xTe_1-x)₃ (BST) and atomic force microscopy image (inset) of the central plate. (b) TEM image of Bi₂(Se_xTe_1-x)₃ nanoplate with x = 0.32±0.02. (c) HRTEM image and SAED pattern of the plate. (d)(e)(f) TEM images of the P-type BST nanosheet. (g) SAED pattern for (f). (Reproduced from Refs. [67–68])

Fig.12 (a) TEM image of Bi₂Te₃ nanoplates and (inset) lateral view. (b) Micro-nano heterostructure synthesis and (c) the replaced nonstoichiometric Bi₂Te₃. (d) XRD pattern of the out-of-plane θ-2θ scan of 110 nm thick Bi₂Se₃ thin film on H:Si substrate. (e) In-plane scans of Bi₂Se₃(015) (i) and Si(220) (ii). (Reproduced from Refs. [39,69–70])

Tab.3 Major syntheses and fabrications for 2D Bi₂Te₃ nano-sized materials

Fig.13 Two types of composites forms in Bi₂Te₃ materials: (a) multi-walled nanotube loaded with Bi₂Te₃ nanosphere; (b) Bi₂Te₃ nanosheets embedded in or set on the nanorods.

Fig.14 (a) XRD pattern of Bi₂Te₃–PANI nanocomposite. TEM images of (b) Bi₂Te₃, (c) PANI and (d) Bi₂Te₃–PANI nanocomposite and (e) EDAX spectrum of the nanocomposite. (f) Comparison of powder XRD patterns of synthesized Bi₂Se₃ and Bi₂Te₃ nanocomposites with the Bi₂Se₃ content of 0 wt.% (i), 5 wt.% (ii), and 10 wt.% (iii). (Reproduced from Refs. [17,91–92])

Tab.4 Major syntheses and fabrications for Bi₂Te₃ composites

Fig.15 Schematic formation procedures of (a) dissolved Bi and Te ions in solvent, (b) formation of Te nanotubes and Bi atoms nucleation, and (c) Bi₂Te₃ nanoparticles attached Te nanotubes. (Reproduced from Ref. [96])

Fig.16 Spin-polarized surface states detection (electrically) in (Bi_0.53Sb_0.47)₂Te₃: (a) the measurement set-up with 4-probe configuration; (b) the helical spin texture with the Dirac point; (c)(d) measured voltage at T = 1.9 K. (Reproduced from Ref. [126])

Fig.17 Characterization and device: (a) SEM image of the nanowires growth; (b) HRTEM image of annealed Bi₂Te₃ nanowire; (c) SEM image of a micro device; (d) temperature dependence of resistance at zero magnetic field. (Reproduced from Ref. [135])

Fig.18 Single Bi₂Te₃ nanowire magnetoresistance measurement: (a) Schematic of the measuring device; (b) SEM image of the nanowires; (c) Magnetoresistance curve; (d) Heightened SdH modulations. (Reproduced from Ref. [93])

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