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Frontiers of Materials Science

ISSN 2095-025X

ISSN 2095-0268(Online)

CN 11-5985/TB

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Front. Mater. Sci.    2020, Vol. 14 Issue (3) : 314-322    https://doi.org/10.1007/s11706-020-0518-4
RESEARCH ARTICLE
Non-substituted fused bis-tetracene based thin-film transistor with self-assembled monolayer hybrid dielectrics
Baolin ZHAO1(), Mikhail FEOFANOV2, Dominik LUNGERICH2,3, Hyoungwon PARK1, Tobias REJEK1, Judith WITTMANN1, Marco SARCLETTI1, Konstantin AMSHAROV2, Marcus HALIK1()
1. Organic Materials and Devices, Institute of Polymer Materials, Department of Materials Science, Friedrich-Alexander-Universität Erlangen-Nürnberg, IZNF Building, Cauerstraße 3, 91058 Erlangen, Germany
2. Chair of Organic Chemistry II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Nikolaus-Fiebiger-Str. 10, 91058 Erlangen, Germany
3. Molecular Technology Innovation Presidential Endowed Chair, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku 113-0033, Tokyo, Japan
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Abstract

Polycyclic aromatic hydrocarbons with zigzag peripheries are high perspective candidates for organic electronics. However, large fused acenes are still poorly studied due to the tedious synthesis. Herein we report a non-substituted fused bistetracene DBATT (2.3,8.9-dibenzanthanthrene) as the semiconductor on low-voltage-driven organic thin-film transistors. The systematic studies of thin-film growth on various self-assembled monolayer (SAM) modified gate dielectrics and the electrical performances were carried out. The sub-monolayer of the semiconductor film shows larger island domains on the alkyl chain SAM. This device exhibits the hole mobility of 0.011 cm2·V−1·s−1 with a current ratio of Ion/Ioff above 105.
Keywords fused bis-tetracene      organic field-effect transistor      contact resistance      self-assembled monolayer     
Corresponding Author(s): Baolin ZHAO,Marcus HALIK   
Online First Date: 28 August 2020    Issue Date: 10 September 2020
 Cite this article:   
Baolin ZHAO,Mikhail FEOFANOV,Dominik LUNGERICH, et al. Non-substituted fused bis-tetracene based thin-film transistor with self-assembled monolayer hybrid dielectrics[J]. Front. Mater. Sci., 2020, 14(3): 314-322.
 URL:  
https://academic.hep.com.cn/foms/EN/10.1007/s11706-020-0518-4
https://academic.hep.com.cn/foms/EN/Y2020/V14/I3/314
Fig.1  (a) Chemical structure of the DBATT molecule. (b) Chemical structures of SAM. Schematics of (c) BGTC transistor and (d) BGBC transistor.
Fig.2  (a) Topologies of AFM images at various nominal thickness with the tapping mode. Images are in 5 μm × 5 μm scan. (b) Height profiles of nominal 1 nm thickness of the DBATT film. Image scanning size is in 1 μm × 1 μm.
Configuration Dielectric C/(μF·cm−2) Vth/V µ/(cm2·V−1·s−1) Ion/Ioff SS/(mV·dec−1)
BGTC devices with shadow mask patterns F13-PA 0.78±0.2 −0.77 8.7×10−3 1.0×103 133
C18-PA 0.86±0.18 −1.28 5.9×10−3 6.8×102 76.9
EO15-PA 1.41±0.05 −1.39 2.7×10−3 4.8×10 86.0
AlOx 1.36±0.05 −0.96 2.0×10−3 4.1×102 98.4
BGBC devices by photo lithography patterns F13-PA 0.54±0.3 −0.24 2.4×10−3 2.0×10 1410
C18-PA 0.51±0.05 −1.64 1.1×10−2 1.3×105 103
EO15-PA 0.95±0.1 −1.70 1.4×10−3 2.7×102 290
AlOx 1.25±0.02 −1.23 2.9×10−3 3.5×103 229
Tab.1  Electrical properties of DBATT with different hybrid dielectrics (SAMs+ AlOx)
Fig.3  (a) Transfer curves of BGBC transistors with C18-PA SAM modified dielectric layer. (b) Transfer curves of BGBC transistors with different SAM modified dielectrics.
Fig.4  (a) Output curves of devices with different dielectric layers. The full line is at the gate voltage −3 V, and the dotted line is at 0 V. (b) Contact resistance and (c) average mobility of BGBC devices with different dielectric layers as a function of the channel length. All the channel width in this measurement is 100 µm.
  Fig. S1 HPLC profile of DBATT (bulk reaction) after aqueous work-up of reaction, detected at 580 nm (PBr column, toluene: methanol as fluent with volume ratio of 4:1, 1 mL·min−1, 35 °C).
  Fig. S2 MALDI-TOF MS spectrum of DBATT (top: without matrix (LDI); middle: DHB matrix; bottom: DCTB matrix).
  Fig. S3(a) Transfer curves of BGTC transistors with C18-PA SAM modified dielectric layer. (b) Transfer curves of BGTC transistors with different SAM modified dielectrics.
  Fig. S4 Time-dependent photo-oxidative decomposition study of DBATT in CH2Cl2 at room temperature after exposure to air and daylight in a timeframe of 24 h.
Dielectric SCAa/(° ) SCAb/(° ) SCAc/(° ) SEt/(mN·m−1) SEd/(mN·m−1) SEp/(mN·m−1)
F13-PA 114.5±0.4 95.9±0.4 82.7±0.9 10.93 10.01 0.92
C18-PA 105.8±0.8 74.4±0.3 51.0±0.1 22.06 21.42 0.64
EO15-PA 35.2±0.5 26.8±0.2 5.2±0.6 59.40 30.69 28.71
AlOx 79.0±1.0 47.6±0.4 17.7±0.7 36.92 31.34 5.58
  Table S1 Parameters of static contact angles and surface energies
  Fig. S5 The topologies of AFM images (1 μm × 1 μm) of nominal 1 nm thickness DBATT on dielectrics.
  Fig. S6 AFM images and roughness of SAMs+ ALD AlOx hybrid dielectric and pristine ALD AlOx.
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