The rise of two-dimensional tellurium for next-generation electronics and optoelectronics
Tao Zhu1,2, Yao Zhang1,2, Xin Wei2, Man Jiang1(), Hua Xu2()
1. State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi’an 710069, China 2. Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
Single-element two-dimensional (2D) tellurium (Te) which possesses an unusual quasi-one-dimensional atomic chain structure is a new member in 2D materials family. 2D Te possesses high carrier mobility, wide tunable bandgap, strong light-matter interaction, better environmental stability, and strong anisotropy, making Te exhibit tremendous application potential in next-generation electronic and optoelectronic devices. However, as an emerging 2D material, the research on fundamental property and device application of Te is still in its infancy. Hence, this review summarizes the most recent research progresses about the new star 2D Te and discusses its future development direction. Firstly, the structural features, basic physical properties, and various preparation methods of 2D Te are systemically introduced. Then, we emphatically summarize the booming development of 2D Te-based electronic and optoelectronic devices including field effect transistors, photodetectors and van der Waals heterostructure photodiodes. Finally, the future challenges, opportunities, and development directions of 2D Te-based electronic and optoelectronic devices are prospected.
. [J]. Frontiers of Physics, 2023, 18(3): 33601.
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