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Influence of the stress on magnetoelectric effect in magnetostrictive-PZT bilayers |
| DING Jian-ming1, JIANG Qing1, ZHONG Chong-gui2 |
| 1.Department of Physics, Suzhou University, Suzhou 215006, China Beijing 100080, China; 2.Department of Physics, Suzhou University, Suzhou 215006, China Beijing 100080, China; Department of Physics, Nantong University, Nantong 226007, China; |
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Abstract In this letter, we investigate the influence of the stress on magnetoelectric (ME) effect in a magnetostrictive-PZT bilayer. ME voltage coefficient α*E =δEδH?????, where δE is the induced electric field for an applied alternating current (ac) magnetic field δH, is obtained by solving the stress-related piezoelectric constitutive equation and the conventional magnetostrictive equation with appropriate boundary condition. Based on the free-energy density function of the PZT film in stress state, we get the stress-related piezoelectric charge coefficient pd*31 and dielectric permittivity pε*33. After taking the cobalt ferrite (CFO) as magnetostrictive phase, it is found that α*E increases with decreasing 2-d compressive stress for CFO-PZT, which not only is qualitatively consistent with previous experimental measurements, but also provides a possible route to improve the ME effect.
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Issue Date: 05 September 2007
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