High efficiency giant magnetoresistive device based on two-dimensional MXene (Mn<sub>2</sub>NO<sub>2</sub>)

doi:10.1007/s11467-022-1184-z

Front. Phys.

2022, Vol. 17

Issue (5) : 53510 https://doi.org/10.1007/s11467-022-1184-z

RESEARCH ARTICLE

High efficiency giant magnetoresistive device based on two-dimensional MXene (Mn₂NO₂)

Xiaolin Zhang¹, Pengwei Gong¹, Fangqi Liu¹, Kailun Yao², Jian Wu³, Sicong Zhu¹(

)

¹. The State Key Laboratory for Refractories and Metallurgy, Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Collaborative Innovation Center for Advanced Steels, International Research Institute for Steel Technology, Wuhan University of Science and Technology, Wuhan 430081, China
². Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
³. College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China

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Abstract

Due to the unique electronic structure of half-metals, characterized by the conductivity of majority-spin and the band gap of minority-spin, these materials have emerged as suitable alternatives for the design of efficient giant magnetoresistive (GMR) devices. Based on the first-principles calculations, an excellent GMR device has been designed by using two-dimensional (2D) half-metal Mn₂NO₂. The results show that Mn₂NO₂ has sandwiched between the Au/nMn₂NO₂ (n = 1, 2, 3)/Au heterojunction and maintains its half-metallic properties. Due to the half-metallic characteristics of Mn₂NO₂, the total current of the monolayer device can reach up to 1500 nA in the ferromagnetic state. At low voltage, the maximum GMR is observed to be 1.15 × 10³¹ %. Further, by increasing the number of layers, the ultra-high GMR at low voltage is still maintained. The developed device is a spintronic device exhibiting the highest magnetoresistive ratio reported theoretically so far. Simultaneously, a significant negative differential resistance (NDR) effect is also observed in the heterojunction. Owing to its excellent half-metallic properties and 2D structure, Mn₂NO₂ is an ideal energy-saving GMR material.

Keywords half-metals Mn₂NO₂ giant magnetoresistive

Corresponding Author(s): Sicong Zhu

Issue Date: 26 July 2022

Cite this article:

Xiaolin Zhang,Pengwei Gong,Fangqi Liu, et al. High efficiency giant magnetoresistive device based on two-dimensional MXene (Mn₂NO₂)[J]. Front. Phys. , 2022, 17(5): 53510.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-022-1184-z
https://academic.hep.com.cn/fop/EN/Y2022/V17/I5/53510

Fig.1 The principle of MR effect, (a) ferromagnetic state electron transport of half-metal. (b) Anti-ferromagnetic state electron transport of half-metal.

Fig.2 (a) A top and (b) a side views of Mn₂NO₂, (c) band structure of Mn₂NO₂ and (d) density of states of Mn₂NO₂.

Fig.3 Au/nMn₂NO₂ (n=1, 2, 3)/Au device structure diagram, after relaxation (a), (b), (c) configuration is for n=1, 2, 3 configuration, respectively. The transport direction is along the z-axis, as shown by the left/right arrows, and the two electrodes extend to z=±∞.

Fig.4 DOS of Mn₂NO₂ in (a) monolayer, (b) bilayer, and (c) trilayer between heterojunctions changes, and the dotted line corresponds to the Fermi level. (d) The charge density between the middle region of the device and the adjacent Au atoms is different. Blue indicates charge transfer and red indicates charge accumulation. The isosurface value sets to 0.03.

Fig.5 (a, b) are the monolayer Mn₂NO₂ heterojunction spin sub-current and total current, (c, d) are the double-layer spin sub-current and total current, and (e, f) are the three-layers spin sub-current and total current.

Fig.6 (a) The trend of GMR with the number of layers under different bias voltages and the specific values of GMR is inserted in the table. Monolayer device spin-resolved NDC (b) FM state and (c) AFM state, bilayer device spin-resolved NDC (d) FM state (e) AFM state, trilayer device spin-resolved NDC (f) FM state (g) AFM state.

Tab.1 Electron density of FM and AFM at the threshold, peak, and off voltages for monolayer, bilayer, and trilayer devices.

Fig.7 (a) DOS of original Mn₂NO₂ in the FM state, (b) DOS of Mn₂NO₂ in the FM device, (c) DOS of original Mn₂NO₂ in the AFM state, and (d) DOS of Mn₂NO₂ in the AFM device.

Fig.8 The relationship between the transmission spectrum of Au/nMn₂NO₂ (n=1, 2, 3)/Au in the FM or AFM configuration and the bias voltage. (a, b) show monolayer device, (c, d) show bilayer device, and (e, f) show trilayer device.

Fig.9 Spin-resolved projected LDOS of Au/1Mn₂NO₂/Au MTJ. FM state (a) majority-spin and (b) minority-spin projected LDOS, and (c, d) are AFM state majority-spin and minority-spin projected LDOS, respectively.

Fig.10 The spin-dependent transmission coefficient of Au/1Mn₂NO₂/Au MTJ in (a, b) FM and (c, d) AFM under zero bias.

Fig.11 The spatial distribution of the MPSH eigenstates of the Au/1Mn₂NO₂/Au at 0.4 V. (a, b) MPSH of LUMO, LUMO+1. (c, d) MPSH of HOMO-1 and HOMO-2. The isosurface value sets to 0.03.

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