Sub-5 nm bilayer GaSe MOSFETs towards ultrahigh on-state current

doi:10.1007/s11467-023-1390-3

Front. Phys.

2024, Vol. 19

Issue (5) : 53202 https://doi.org/10.1007/s11467-023-1390-3

Sub-5 nm bilayer GaSe MOSFETs towards ultrahigh on-state current

Xueping Li^1,^2,³, Xiaojie Tang¹, Zhuojun Wang¹, Peize Yuan³, Lin Li³, Chenhai Shen³, Congxin Xia³(

)

¹. College of Electronic and Electrical Engineering, Henan Normal University, Xinxiang 453007, China
². Henan Key Laboratory of Optoelectronic Sensing Integrated Application, Xinxiang 453007, China
³. School of Physics, Henan Normal University, Xinxiang 453007, China

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Abstract

Dielectric engineering plays a crucial role in the process of device miniaturization. Herein we investigate the electrical properties of bilayer GaSe metal-oxide-semiconductor field-effect transistors (MOSFETs), considering hetero-gate-dielectric construction, dielectric materials and GaSe stacking pattern. The results show that device performance strongly depends on the dielectric constants and locations of insulators. When high-k dielectric is placed close to the drain, it behaves with a larger on-state current (I_on) of 5052 μA/μm when the channel is 5 nm. Additionally, when the channel is 5 nm and insulator is HfO₂, the largest I_on is 5134 μA/μm for devices with AC stacking GaSe channel. In particular, when the gate length is 2 nm, it still meets the HP requirements of ITRS 2028 for the device with AA stacking when high-k dielectric is used. Hence, the work provides guidance to regulate the performance of the two-dimensional nanodevices by dielectric engineering.

Keywords GaSe stacking pattern metal-oxide-semiconductor field-effect transistors (MOSFETs) ultrahigh on-state current dielectric engineering

Corresponding Author(s): Congxin Xia

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Issue Date: 27 March 2024

Cite this article:

Xueping Li,Xiaojie Tang,Zhuojun Wang, et al. Sub-5 nm bilayer GaSe MOSFETs towards ultrahigh on-state current[J]. Front. Phys. , 2024, 19(5): 53202.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-023-1390-3
https://academic.hep.com.cn/fop/EN/Y2024/V19/I5/53202

Fig.1 (a) Structure diagram of the double gate MOSFETs. (b) Band structure of bilayer GaSe. (c) Transfer characteristic curves. (d?f) I_on, SS, τ and PDP of the devices with dielectric constants of 3.9 under V_ds = 0.64 V. The Arm, Zig, and N_D denote armchair direction, zigzag direction, and doping concentration, respectively.

Fig.2 The (a?c) I_ds?V_g, I_on, and I_on/I_off of the MOSFETs with L_g = 5 nm for type-A structure, the (d?f) for type-B structure.

Fig.3 The PLDOS and spectral current of the T₂₂B₂₂ and T₁₂B₁₂ devices at (a, b) off-state and (d, e) on-state under V_ds = 0.64 V. The light red area indicates the spectral current in the bias window, and the yellow dashed area indicates the bias window. The (c) and (f) valence band profiles of devices at different gate voltages when V_ds = 0.64 V.

Fig.4 (a) The I_ds−V_g of MOSFETs with different stackings under L_g = 5 nm. The inserts are for the enlarged curves between V_g = 0.2 V and 0.3 V. The transmission spectra of bilayer GaSe under V_ds = 0.64 V with (b) V_g = 0.2 V and (d) V_g = ?0.2 V. (c) The V_off of the devices with SiO₂ and HfO₂ insulators under different stacking patterns.

Fig.5 The I_ds?V_g of devices with SiO₂ and HfO₂ dielectric for AA and AB stackings at (a) L_g = 6 nm, (b) 4 nm and (c) 2 nm. (d?f) The I_on, V_off and SS of the devices for different L_g.

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