Multi-terminal pectin/chitosan hybrid electrolyte gated oxide neuromorphic transistor with multi-mode cognitive activities

doi:10.1007/s11467-024-1401-z

2024, Vol. 19

Issue (5) : 53204 https://doi.org/10.1007/s11467-024-1401-z

Multi-terminal pectin/chitosan hybrid electrolyte gated oxide neuromorphic transistor with multi-mode cognitive activities

Yan Li^1,², You Jie Huang¹, Xin Li Chen^1,², Wei Sheng Wang^1,², Xin Huang¹, Hui Xiao², Li Qiang Zhu¹(

)

¹. School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
². Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

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Abstract

In order to fulfill the urgent requirements of functional products, circuit integration of different functional devices are commonly utilized. Thus, issues including production cycle, cost, and circuit crosstalk will get serious. Neuromorphic computing aims to break through the bottle neck of von Neumann architectures. Electronic devices with multi-operation modes, especially neuromorphic devices with multi-mode cognitive activities, would provide interesting solutions. Here, pectin/chitosan hybrid electrolyte gated oxide neuromorphic transistor was fabricated. With extremely strong proton related interfacial electric-double-layer coupling, the device can operate at low voltage of below 1 V. The device can also operate at multi-operation mode, including bottom gate mode, coplanar gate and pseudo-diode mode. Interestingly, the artificial synapse can work at low voltage of only 1 mV, exhibiting extremely low energy consumption of ~7.8 fJ, good signal-to-noise ratio of ~229.6 and sensitivity of ~23.6 dB. Both inhibitory and excitatory synaptic responses were mimicked on the pseudo-diode, demonstrating spike rate dependent plasticity activities. Remarkably, a linear classifier is proposed on the oxide neuromorphic transistor under synaptic metaplasticity mechanism. These results suggest great potentials of the oxide neuromorphic devices with multi-mode cognitive activities in neuromorphic platform.

Keywords pectin/chitosan hybrid electrolyte pseudo-diode function multi-mode cognitive activities ultrasensitive oxide neuromorphic device linear data classifier

Corresponding Author(s): Li Qiang Zhu

About author:

Li Liu and Yanqing Liu contributed equally to this work.

Issue Date: 22 April 2024

Cite this article:

Yan Li,You Jie Huang,Xin Li Chen, et al. Multi-terminal pectin/chitosan hybrid electrolyte gated oxide neuromorphic transistor with multi-mode cognitive activities[J]. Front. Phys. , 2024, 19(5): 53204.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-024-1401-z
https://academic.hep.com.cn/fop/EN/Y2024/V19/I5/53204

Fig.1 (a) Schematic diagram for depositing of ITO patterns on electrolyte. (b) Molecular structures of chitosan and pectin. FTIR spectra of (c) pectin, (d) chitosan and (e) double-layered pectin/chitosan composite electrolyte film. AFM surface topography image of (f) pectin film and (g) chitosan film. (h) Cross-sectional SEM image for the composite electrolyte film.

Fig.2 (a) Schematic diagram of a biological synapse. (b) Frequency-dependent specific capacitance for double-layered pectin/chitosan composite electrolyte. Inset: ITO/electrolyte/ITO capacitor. (c) Extracted EDL capacitances measured for ten times. (d) Comparison of the present EDL capacitance with those from the reported works. (e) Impedance data of the composite electrolyte film.

Fig.3 Schematic illustration of an oxide neuromorphic transistor worked at (a) bottom-gate mode (G_B), (b) coplanar gate mode and (c) pseudo-diode operates at GS mode. (d) Transfer curves for G_B mode. (e) Comparison of transfer curves for oxide neuromorphic transistor worked at bottom gate mode and coplanar gate mode. (f) I?V curve for pseudo-diode operates at GS mode.

Fig.4 Typical synaptic responses on GS mode. (a) Typical PSC response triggered with a pre-synaptic stimulus (1 V, 20 ms) loaded on the drain. (b) Peak PSC values and energy consumption (P) values as a function of spike amplitudes (U). (c) S/N and S values as a function of U values. Inset: Schematic diagram for estimate S/N. (d) Typical PSC current under paired pre-synaptic spikes.

Fig.5 (a?c) Synaptic responses on pseudo-diode with GD mode. (a) Typical PSC response triggered by a pre-synaptic spike (1 V, 30 ms) with a base voltage of 0.5 V. (b) PSC responses with successive spikes of (1 V, 100 ms). Spike interval time (ΔT_pre) is 30 ms. (c) Peak PSC value as a function of spike numbers with different ΔT_pre. The spike amplitude and spike duration are 1.5 V and 100 ms, respectively. (d?f) Synaptic responses on pseudo-diode with GS mode. (d) PSC response triggered by a pre-synaptic spike (1 V, 50 ms) with a base voltage of ?0.5 V. (e) PSC responses with successive spikes of (1 V, 100 ms). ΔT_pre is 80 ms. (f) Peak PSC value as a function of spike numbers with different ΔT_pre. The spike amplitude and duration time are 1 V and 50 ms, respectively. (g) Schematic diagram of dynamic proton gating effects on pseudo-diode. (h) Frequency dependent facilitation index (η) for GD mode. (i) Frequency dependent depression index (η) for GS mode.

Fig.6 (a) EPSC response on oxide neuromorphic transistor triggered with paired pre-synaptic spikes (1 V, 10 ms) with spike interval time (ΔT) of 20 ms. (b) PPF index (ξ) as a function of ΔT. (c) Schematically diagram of the spiking trains consisted of priming spike and main spike. (d) EPSC responses with the increased priming spike duration time. ΔT is fixed at 50 ms. (e) EPSC responses with the increased ΔT. The duration time of the priming spike is fixed at 1980 ms. (f) Gradient plot with different priming spike duration and spike ΔT.

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