Effects of taping on grinding quality of silicon wafers in backgrinding

doi:10.1007/s11465-020-0624-0

Front. Mech. Eng.

2021, Vol. 16

Issue (3) : 559-569 https://doi.org/10.1007/s11465-020-0624-0

RESEARCH ARTICLE

Effects of taping on grinding quality of silicon wafers in backgrinding

Zhigang DONG¹, Qian ZHANG¹, Haijun LIU², Renke KANG¹(

), Shang GAO¹

¹. Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian 116024, China
². CIMS Institute, School of Mechanical Engineering, Hefei University of Technology, Hefei 230009, China

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Abstract

Taping is often used to protect patterned wafers and reduce fragmentation during backgrinding of silicon wafers. Grinding experiments using coarse and fine resin-bond diamond grinding wheels were performed on silicon wafers with tapes of different thicknesses to investigate the effects of taping on peak-to-valley (PV), surface roughness, and subsurface damage of silicon wafers after grinding. Results showed that taping in backgrinding could provide effective protection for ground wafers from breakage. However, the PV value, surface roughness, and subsurface damage of silicon wafers with taping deteriorated compared with those without taping although the deterioration extents were very limited. The PV value of silicon wafers with taping decreased with increasing mesh size of the grinding wheel and the final thickness. The surface roughness and subsurface damage of silicon wafers with taping decreased with increasing mesh size of grinding wheel but was not affected by removal thickness. We hope the experimental finding could help fully understand the role of taping in backgrinding.

Keywords taping silicon wafer backgrinding subsurface damage surface roughness

Corresponding Author(s): Renke KANG

Just Accepted Date: 26 March 2021 Online First Date: 16 April 2021 Issue Date: 24 September 2021

Cite this article:

Zhigang DONG,Qian ZHANG,Haijun LIU, et al. Effects of taping on grinding quality of silicon wafers in backgrinding[J]. Front. Mech. Eng., 2021, 16(3): 559-569.

URL:

https://academic.hep.com.cn/fme/EN/10.1007/s11465-020-0624-0
https://academic.hep.com.cn/fme/EN/Y2021/V16/I3/559

Fig.1 Equipment of grinding experiment. (a) Ultra-precision grinding machine; and (b) taping machine.

Tab.1 Parameters of two tapes used in the grinding experiments

Tab.2 Grinding parameters in coarse and fine grinding experiments

Fig.2 Measurement equipment for obtaining peak-to-valley values.

Fig.3 Distribution of measurement points on the silicon wafer. (a) Surface roughness measurement and (b) subsurface damage layer measurement.

Fig.4 Preparation of silicon wafer samples for subsurface damage inspection: (a) Ground samples and (b) clamped samples.

Fig.5 Silicon wafers ground by 325# resin-bond diamond grinding wheel: (a) With taping in backgrinding, (b) without taping, and (c) with a tape of 160 mm thickness.

Fig.6 Force diagram of the silicon wafer: (a) Without and (b) with taping.

Fig.7 Peak-to-valley (PV) values of wafers ground by (a) 600# and (b) 2000# resin-bond diamond grinding wheel.

Fig.8 Surface roughness variation of wafers ground by (a) 600# and (b) 2000# resin-bond diamond grinding wheel.

Fig.9 Depth of subsurface damage layer of each silicon wafer calculated as the average of four samples.

Fig.10 Subsurface damage layer (d_s) of the silicon wafer after grinding with tape of 80 mm thickness.

Fig.11 Groove density of silicon wafers ground by 600# resin-bond diamond grinding wheel: (a) Without tape, (b) with tape thickness of 80 mm, and (c) with tape thickness of 160 mm.

Fig.12 Action of a spherical grain in grinding. F is the grinding force, R_e is the equivalent radius of grain, t is the depth of grain feed, and q is the angle of the actual cutting.

Fig.13 Geometric model of grain depth of cut in backgrinding: (a) With taping and (b) without taping. L is the contact arc length of the main cutting edge of silicon wafer with taping, L₀ is the contact arc length of the main cutting edge of silicon wafer without taping during grinding, t₀ is the actual cutting depth in Step 1, ε is the strain of tape, h, h₀, h₁, h₂, and h₃ are the thicknesses of the silicon wafer in different grinding steps, and h_t is the tape thickness.

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