Vertical-cavity surface-emitting lasers with nanostructures for optical interconnects

doi:10.1007/s12200-016-0611-6

Front. Optoelectron.

2016, Vol. 9

Issue (2) : 249-258 https://doi.org/10.1007/s12200-016-0611-6

REVIEW ARTICLE

Vertical-cavity surface-emitting lasers with nanostructures for optical interconnects

Anjin LIU^1,^2,^*(

),Dieter BIMBERG^2,³

1. Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2. Institute of Solid State Physics, Technische Universit?t Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
3. King Abdulaziz University, Jeddah, Kingdom of Saudi Arabia (KSA)

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Abstract

Optical interconnects (OIs) are the only solution to fulfil both the requirements on large bandwidth and minimum power consumption of data centers and high-performance computers (HPCs). Vertical-cavity surface-emitting lasers (VCSELs) are the ideal light sources for OIs and have been widely deployed. This paper will summarize the progress made on modulation speed, energy efficiency, and temperature stability of VCSELs. Especially VCSELs with surface nanostructures will be reviewed in depth. Such lasers will provide new opportunities to further boost the performance of VCSELs and open a new door for energy-efficient OIs.

Keywords optical interconnects (OIs) vertical-cavity surface-emitting laser (VCSEL) subwavelength grating modulation speed energy efficiency

Corresponding Author(s): Anjin LIU

Just Accepted Date: 18 February 2016 Online First Date: 29 March 2016 Issue Date: 05 April 2016

Cite this article:

Anjin LIU,Dieter BIMBERG. Vertical-cavity surface-emitting lasers with nanostructures for optical interconnects[J]. Front. Optoelectron., 2016, 9(2): 249-258.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-016-0611-6
https://academic.hep.com.cn/foe/EN/Y2016/V9/I2/249

Fig.1 Global data center IP traffic growth at a compound annual growth rate (CAGR) of 25% from 2014 to 2019 [1]

Fig.2 Exponential growth of supercomputing power as recorded by the TOP500 list [2]

Fig.3 (a) Output optical power versus current density for 11-μm oxide aperture VCSELs with different etch depths at 25°C. Inset: close-up of the threshold region; (b) measured small-signal modulation response at currents for maximum bandwidth for 11-μm oxide aperture VCSELs with different etch depths at 25°C [36]

Fig.4 Comparison of the refractive index and simulated optical field intensity distribution inside the previous VCSEL structure with a 3l/2 cavity (a) and inside the new VCSEL structure with a l/2 cavity (b) [37]

Fig.5 BER against received optical power of VCSELs with oxide-aperture diameters of 3.5, 4, and 5 μm operating at 25 Gbit/s at bias currents yielding maximum energy efficiency [28]. BER: bit error ratio; EDR: energy-to-data ratio; HBR: heat-to-bit rate ratio

Fig.6 (a) Peak gain wavelength of a single In₀_.₂₁Ga₀_.₇₉As/GaAs₀_.₈₈P₀_.₁₂ QW/barrier active region and the etalon resonance wavelength of our 980 nm VCSEL versus temperature for gain-to-etalon wavelength offsets fixed at 300 K at 0, - 15, and - 25 nm relative to the peak QW gain [39]; (b) large-signal modulation measurements of multimode oxide-confined 980 nm VCSEL at 50 and 46 Gbit/s at 25°C and 85°C, respectively [31]. OM2: optical mode 2; MMF: multimode fiber; NZR: non-return-to-zero; PBRS: pseudo random binary sequence

Fig.7 (a) Schematic of the HCG; (b) double-mode solution exhibiting perfect cancellation at the HCG output plane leading to 100% reflectivity [48]. Λ: grating period; S: width of the grating bar; a: width of the air gap; TE: transverse electric; TM: transverse magnetic

Fig.8 (a) Reflectivity spectra for different HCG sizes with a fixed-size (4 mm, 1/e width of the Gaussian source) Gaussian source under normal incidence [60]; (b) mode field in finite-size HCG with a 4-mm Gaussian incident wave [61]; (c) guided mode with even symmetry with a 4-mm Gaussian incident wave [61]

Fig.9 Energy penetration depths for HCG, 2D photonic crystal slab, and DBR [63]

Fig.10 Schematic of a HCG-VCSEL; (b) power-current-voltage curve of a HCG-VCSEL. The inset shows the polarization-resolved output power plotted in dB scale [52]

Fig.11 (a) Scanning electronic microscopy (SEM) image of GaAs-based HCG; (b) reflectivity spectra of HCG-based filter array [69]

Fig.12 (a) Schematic of the Si-VCSEL; (b) fundamental mode profile of the Si-VCSEL; (c) SEM image of the Si-VCSEL sample seen from the top [78]

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