Oxide perovskite Ba<sub>2</sub>AgIO<sub>6</sub> wafers for X-ray detection

doi:10.1007/s12200-021-1236-y

Front. Optoelectron.

2021, Vol. 14

Issue (4) : 473-481 https://doi.org/10.1007/s12200-021-1236-y

RESEARCH ARTICLE

Oxide perovskite Ba₂AgIO₆ wafers for X-ray detection

Longbo YANG, Jincong PANG, Zhifang TAN, Qi XIAO, Tong JIN, Jiajun LUO(

), Guangda NIU, Jiang TANG

Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

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Abstract

X-ray detection is of great significance in biomedical, nondestructive, and scientific research. Lead halide perovskites have recently emerged as one of the most promising materials for direct X-ray detection. However, the lead toxicity remains a worrisome concern for further commercial application. Great efforts have been made to search for lead-free perovskites with similar optoelectronic properties. Here, we present a lead-free oxide double perovskite material Ba₂AgIO₆ for X-ray detection. The lead-free, all-inorganic nature, as well as the high density of Ba₂AgIO₆, promises excellent prospects in X-ray applications. By employing the hydrothermal method, we successfully synthesized highly crystalline Ba₂AgIO₆ powder with pure phase. Furthermore, we prepared Ba₂AgIO₆ wafers through isostatic pressure and built X-ray detectors with Au/Ba₂AgIO₆ wafer/Au photoconductive structure. The as-prepared X-ray detectors showed a sensitivity of 18.9 μC/(Gy_air·cm²) at 5 V/mm, similar to commercial α-Se detectors showcasing their advantages for X-ray detection.

Keywords oxide double perovskite lead-free X-ray detection

Corresponding Author(s): Jiajun LUO

Online First Date: 11 October 2021 Issue Date: 06 December 2021

Cite this article:

Longbo YANG,Jincong PANG,Zhifang TAN, et al. Oxide perovskite Ba₂AgIO₆ wafers for X-ray detection[J]. Front. Optoelectron., 2021, 14(4): 473-481.

URL:

https://academic.hep.com.cn/foe/EN/10.1007/s12200-021-1236-y
https://academic.hep.com.cn/foe/EN/Y2021/V14/I4/473

Fig.1 (a) Absorption coefficients of Ba₂AgIO₆, Si, MAPbBr₃, Cs₂AgBiBr₆, and CdTe from soft X-rays to gamma rays. (b) Attenuation efficiencies of Ba₂AgIO₆, Si, MAPbBr₃, Cs₂AgBiBr₆, and CdTe at different thickness. (c) Crystal structure of Ba₂AgIO₆ and the fitted bandgap width (1.9 eV)

Fig.2 (a) X-ray diffraction (XRD) data of the powders synthesized by hydrothermal method and a low-temperature solution process (LTSP). (b) Photoluminescence spectrum of the powders synthesized by different methods. (c) Schematic of preparation of Ba₂AgIO₆ wafers by cold isostatic pressing

Fig.3 (a) Device structure of Ba₂AgIO₆ X-ray detector. (b) Response for devices prepared by hydrothermal method and mixed precipitation at 785 μGy_air/s X-ray dose rate at 5 V bias. (c) Response for devices prepared by hydrothermal method from 5499 to 785 μGy_air/s X-ray dose rate and 1 to 5 V bias. (d) X-ray sensitivity of devices prepared by hydrothermal method and mixed precipitation method at different bias voltages

Fig.4 (a) X-ray diffraction (XRD) data of Ba₂AgIO₆ powder exposed in air for different time. (b) X-ray sensitivity of Ba₂AgIO₆ X-ray detector exposed in air for different time

Fig. S1 X-ray diffraction (XRD) data of AgIO₄

Fig. S2 (a) Scanning electron microscope (SEM) image of Ba₂AgIO₆ powder. (b) SEM image of Ba₂AgIO₆ wafer at 10 μm scalebar. (c) SEM image of Ba₂AgIO₆ wafer at 100 nm scalebar

Table S1 X-ray fluorescence (XRF) data of Ba₂AgIO₆

Fig. S3 Response for devices prepared by hydrothermal method from 5499 to 785 μGy_air/s X-ray dose rate at 5 V bias

Fig. S4 Air ionization response with the same probes’ position at 5499 and 4713.5 μGy_air/s X-ray dose rate at 5 V bias

Fig. S5 Photoconductive gain factor under different dose rates and electric fields

Table S2 X-ray sensitivity of Ba₂AgIO₆ wafers at different thicknesses at 5 V/mm

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