Ferroelectricity in hBN intercalated double-layer graphene

doi:10.1007/s11467-022-1175-0

Front. Phys.

2022, Vol. 17

Issue (4) : 43504 https://doi.org/10.1007/s11467-022-1175-0

RESEARCH ARTICLE

Ferroelectricity in hBN intercalated double-layer graphene

Yibo Wang¹(

), Siqi Jiang¹, Jingkuan Xiao¹, Xiaofan Cai¹, Di Zhang¹, Ping Wang¹, Guodong Ma¹, Yaqing Han¹, Jiabei Huang¹, Kenji Watanabe², Takashi Taniguchi², Yanfeng Guo⁴, Lei Wang^1,³, Alexander S. Mayorov¹(

), Geliang Yu^1,³(

)

¹. National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing 210093, China
². National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
³. Collaborative Innovation Centre of Advanced Microsctructures, Nanjing University, Nanjing 210093, China
⁴. School of Physical Science and Technology, Shanghai Tech University, Shanghai 201210, China

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Abstract

Van der Waals (vdW) assembly of two-dimensional materials has long been recognized as a powerful tool for creating unique systems with properties that cannot be found in natural compounds [Nature 499, 419 (2013)]. However, among the variety of vdW heterostructures and their various properties, only a few have revealed metallic and ferroelectric behaviour signatures [Sci. Adv. 5, eaax5080 (2019); Nature560, 336 (2018)]. Here we show ferroelectric semimetal made of double-gated double-layer graphene separated by an atomically thin crystal of hexagonal boron nitride. The structure demonstrates high room temperature mobility of the order of 10 m²·V⁻¹·s⁻¹ and exhibits ambipolar switching in response to the external electric field. The observed hysteresis is reversible and persists above room temperature. Our fabrication method expands the family of ferroelectric vdW compounds and offers a promising route for developing novel phase-changing devices. A possible microscopic model of ferroelectricity is discussed.

Keywords double-layer graphene ferroelectric metal intercalation dry transfer high-mobility

Corresponding Author(s): Yibo Wang,Alexander S. Mayorov,Geliang Yu

Issue Date: 17 June 2022

Cite this article:

Yibo Wang,Siqi Jiang,Jingkuan Xiao, et al. Ferroelectricity in hBN intercalated double-layer graphene[J]. Front. Phys. , 2022, 17(4): 43504.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-022-1175-0
https://academic.hep.com.cn/fop/EN/Y2022/V17/I4/43504

Fig.1 Hexagonal boron nitride-separated quasi-twisted bilayer graphene. (a) Optical photograph of our Hall bar device. An encapsulated qTBG heterostructure is connected to metal leads (dull green) and endowed with gold top gate (bright green) and bottom silicon gate electrodes. (b) Schematic of the triple-layer structure. Two MLG layers are twisted by a small twist angle. (c) The schematic of the qTBG device with top and bottom gates. (d, e) The device’s resistivity measured as a function of

V b g

and

V t g

at 2.1 K for

V t g = 0

V and

V b g = 0

V, respectively.

Fig.2 Gate voltage sweeps with increasing maximum voltage. (a) Resistance as a function of

V b g

for different maximum back gate voltage. The curves are shifted up for clarity. (b) Resistance as a function of

V t g

for different maximum top gate voltage. The curves are shifted up for clarity. (c) Two scans from the image (b) shows the memory effect.

Fig.3 Ferroelectric hysteresis at 2.1 K. (a, b) The sample’s resistivity as a function of the back gate and top gate voltages for the forward (a) and backward (b) back gate voltage sweeps at fixed

V t g

. Scattered data show the position of the maximum resistivity for a paraelectric phase. (c) The maximum of the resistivity for the forward and backward as a function of the top gate and back gate voltages. The dashed line is the best fit for the forward and backward sweep’s resistivity maxima in the linear ferroelectric regime. The blue and red squares show the maximum resistivity for a paraelectric phase. (d) Hall effect measured at

B = 0.5

T for forward (solid black curve) and backward (dashed black curve) sweeps as a function of back gate voltage at

V t g = 0

V. The red curves show corresponding concentrations calculated from the Hall voltage. (e) Hall effect measured at

B = 0.5

T for the forward (solid black curve) and backward (dashed black curve) sweeps as a function of top gate voltage at

V b g = 0

V. The red curves show corresponding concentrations calculated from the Hall voltage.

Fig.4 Transport properties at high temperatures. (a) The temperature dependence of the resistivity as a function of back gate voltage at

V t g = 0

V for the forward (solid style) and backward sweeps (dashed style) for four selected temperatures. (b) The voltage difference between CNP positions of the backward and forward sweeps. The temperature changes from 2 K to 325 K. (c) The temperature dependence of the resistivity for the forward sweeps for different electron concentrations. The smallest resistivity is multiplied by 5. (d) The mobility of electron gas as a function of temperature measured at 3

× 1015

m^?2, 6

× 1015

m^?2 and 9

× 1015

m^?2. The dashed lines are guides for the eye.

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