Recent advances in memristors based on two-dimensional ferroelectric materials

doi:10.1007/s11467-023-1329-8

Front. Phys.

2024, Vol. 19

Issue (1) : 13402 https://doi.org/10.1007/s11467-023-1329-8

TOPICAL REVIEW

Recent advances in memristors based on two-dimensional ferroelectric materials

Wenbiao Niu¹, Guanglong Ding¹, Ziqi Jia¹, Xin-Qi Ma¹, JiYu Zhao¹, Kui Zhou¹, Su-Ting Han², Chi-Ching Kuo³(

), Ye Zhou¹(

)

¹. Institute for Advanced Study, Shenzhen University, Shenzhen 518060, China
². College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
³. Institute of Organic and Polymeric Materials, Research and Development Center of Smart Textile Technology, Taipei University of Technology, Taipei 10608, Taiwan, China

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Abstract

In this big data era, the explosive growth of information puts ultra-high demands on the data storage/computing, such as high computing power, low energy consumption, and excellent stability. However, facing this challenge, the traditional von Neumann architecture-based computing system is out of its depth owing to the separated memory and data processing unit architecture. One of the most effective ways to solve this challenge is building brain inspired computing system with in-memory computing and parallel processing ability based on neuromorphic devices. Therefore, there is a research trend toward the memristors, that can be applied to build neuromorphic computing systems due to their large switching ratio, high storage density, low power consumption, and high stability. Two-dimensional (2D) ferroelectric materials, as novel types of functional materials, show great potential in the preparations of memristors because of the atomic scale thickness, high carrier mobility, mechanical flexibility, and thermal stability. 2D ferroelectric materials can realize resistive switching (RS) because of the presence of natural dipoles whose direction can be flipped with the change of the applied electric field thus producing different polarizations, therefore, making them powerful candidates for future data storage and computing. In this review article, we introduce the physical mechanisms, characterizations, and synthetic methods of 2D ferroelectric materials, and then summarize the applications of 2D ferroelectric materials in memristors for memory and synaptic devices. At last, we deliberate the advantages and future challenges of 2D ferroelectric materials in the application of memristors devices.

Keywords two-dimensional ferroelectric materials synthesis strategies memristors artificial synapses

Corresponding Author(s): Chi-Ching Kuo,Ye Zhou

Issue Date: 13 September 2023

Cite this article:

Wenbiao Niu,Guanglong Ding,Ziqi Jia, et al. Recent advances in memristors based on two-dimensional ferroelectric materials[J]. Front. Phys. , 2024, 19(1): 13402.

URL:

https://academic.hep.com.cn/fop/EN/10.1007/s11467-023-1329-8
https://academic.hep.com.cn/fop/EN/Y2024/V19/I1/13402

Fig.1 High performance of memristors based on several kinds of 2D ferroelectric materials. (a) Reprinted with permission from Ref. [63], Copyright © 2020 Wiley‐VCH GmbH. (b) Reprinted with permission from Ref. [64], Copyright © 2019 American Chemical Society. (c) Reprinted with permission from Ref. [60], Copyright © 2021 American Chemical Society. (d) Reprinted with permission from Ref. [65], Copyright © 2022 American Chemical Society.

Fig.2 (a) Hysteresis curve of ferroelectric materials under electric field. E1 represents the electric field. (b) AFM image of In₂Se₃ films with thicknesses of 1.26−4.25 nm. (c) AFM images of In₂Se₃ films at 2−6 nm. (d, e) Amplitude and phase images of OOP PFM. (f, g) Amplitude and phase images of IP PFM. (h, i) OPP and IP phase images corresponding to 6 nm In₂Se₃ flake obtained by applying successive voltages of −7 and +6 V with size of 2 and 1 μm. The scale bars are 1 μm in (b−i). (b−i) Reprinted with permission from Ref. [90], Copyright © 2018 American Chemical Society.

Fig.3 (a) Side view of the crystal structure of α-In₂Se₃. (b) Schematic representation of the planar crystal structure and ferroelectric polarization P↑ and P↓ of α-In₂Se₃. (c) The sulfur framework of the CuInP₂S₆ crystal structure with octahedral gaps filled by Cu and In cations and P−P pairs, where Cu⁺ ions can leap within the layer and cross the vdWs gap under the electric field. (d) The labelled Cu1, Cu2 and Cu3 are the three copper positions. The downward and upward positions of Cu1 are also denoted. (a) Reprinted with permission from Ref. [76], Copyright © 2021 American Chemical Society. (b) Reprinted with permission from Ref. [113], Copyright © 2020 Wiley‐VCH GmbH. (c, d) Reprinted with permission from Ref. [79], Copyright © 2021 American Chemical Society.

Fig.4 (a) Schematic diagram of mechanical exfoliation process for the production of 2D materials. (b) Diagram of the key process and main parameters tailored for use in PLD. (c) Schematic diagram of the CVD growth process of 2D ferroelectric material In₂Se₃ on mica substrate. (d) In₂Se₃ layers synthesized via PVD with In₂Se₃ powders as precursors. (e−g) Schematic diagram of the main liquid exfoliation mechanisms. (a) Reprinted with permission from Ref. [145], Copyright © 2019 The Author(s). Published by Elsevier Ltd. (b) Reprinted with permission from Ref. [146], Copyright © 2023 The Royal Society of Chemistry. (c) Reprinted with permission from Ref. [147], Copyright © 2021 Elsevier B.V. All rights reserved. (d) Reprinted with permission from Ref. [148], Copyright © 2015 American Chemical Society. (e−g) Reprinted with permission from Ref. [139], Copyright © 2013, American Association for the Advancement of Science.

Preparation methods	Advantages	Disadvantages	Ref.
Mechanical exfoliation[Fig.4(a)]	(1) Easy to operate (2) Highly flexible (3) High quality of prepared material samples	(1) Easy to mix in large amounts of impurities (2) Unstable structure (3) Low production efficiency, cannot be industrialized (4) Poor samples controllability	[55, 77, 79, 89, 136, 137, 149-157]
PLD [Fig.4(b)]	(1) Rapid response and growth (2) Varieties of films can be made (3) Less contamination to the film, can make high purity film (4) Strong orientation and high film resolution (5) Easy to make multi-layer films and heterogeneous films	(1) Large area deposition of materials cannot be achieved (2) Slow average deposition rate (3) Relatively high cost	[85, 145, 158, 146]
CVD [Fig.4(c)]	(1) Fast film formation speed, can deposit large quantities of uniformly composed films (2) Good wrap-around properties, complex shaped devices can be uniformly coated (3) Good adhesion strength to the substrate (4) Easy to obtain high purity and good crystallinity of the film (5) A flat deposition surface can be obtained	(1) High reaction temperature may cause coarse grains and brittle phases (2) Affect the service life of the machinery (3) Deposition rate is not too high (4) Easy to pollute the environment	[90, 115, 159-163]
PVD [Fig.4(d)]	(1) Simple principle, easy to operate (2) Uniform and dense film formation (3) Fast deposition rate and high efficiency (4) Low cost (5) Low environmental pollution	(1) Relatively poor adhesion of the film to the substrate (2) Repeatability is less satisfactory (3) Chemical impurities are difficult to remove	[56, 113, 132]
Liquid phase exfoliation [Fig.4(e)]	(1) Simple process, easy to operate (2) Mild conditions (3) High crystalline quality (4) Low cost (5) Easy to achieve large-scale production	(1) A bit noisy (2) Small sample size (3) Some auxiliary chemical reagents are easy to pollute the environment and human body	[80, 83, 116, 141, 142, 144, 164]

Tab.1 A summary of synthesis strategies to organize 2D ferroelectric materials.

Fig.5 (a) Schematic diagram device structure of α-In₂Se₃ memristor. (b, c) Symmetric and rectifying devices with increasing maximum V_ds. (d−f) |I|−V_ds relationships, OOP PFM phase images and contact potential difference images of rectifying in the LRS. (g−i) |I|−V_ds relationships, OOP PFM phase images and contact potential difference images of rectifying in the HRS. (a−i) Reprinted with permission from Ref. [113], Copyright © 2020 Wiley‐VCH GmbH.

Fig.6 (a) Schematic diagram of α-In₂Se₃-based synaptic device. (b) Optical image of the α-In₂Se₃-based synaptic device. (c) I−V curves of the device under voltage sweep. (d) The endurance of α-In₂Se₃-based device (100 cycles, set pulse: 5 V/100 µs, reset pulse: −5 V/100 µs). (e) Schematic diagram of the artificial synapse based on α-In₂Se₃. (f) Long-term potentiation/long-term depression under the different pulse amplitude from 4 to 6 V. The current was read at 0.5 V after each pulse, and the pulse width is fixed with 1 µs. (g) STDP learning rules realized by α-In₂Se₃ artificial synapse. (h) The recognition results to MNIST handwritten dataset. The recognition accuracy of the α-In₂Se₃-based synaptic device is 93.2%, close to that of based on ideal hard-based device (94.1%). (a−h) Reprinted with permission from Ref. [153], Copyright © 2021 Wiley‐VCH GmbH.

Fig.7 Nonvolatile ferroelectric memory based on lateral β/α/β In₂Se₃ heterojunction. (a) Schematic diagram of a β/α/β In₂Se₃ device. The dashed box in the middle represents the α-phase. The β-phase is in contact with the electrodes at both ends. The position of the pink Se atoms in the middle can be used to distinguish between α-In₂Se₃ and β-In₂Se₃ (Blue: In atoms). The arrows represent the direction of polarization. (b) Side view of the cell unit for the α and β of In₂Se₃. Indium (blue balls) and selenium (red balls) atoms combine to form the tetrahedral and octahedral structures shown in the inset, respectively. (c) Raman spectroscopy of the α and β phases of In₂Se₃. (d) The I−V curves output measured repeatedly between +5 to −5 V, with the arrows representing the scanning direction. (e) The current response under periodic voltage pulses. The pulse width for write and erase is 10 ms, and two logic states can be read at 0.1 V. (f, g) The retention and endurance performance of the device. (a−g) Reprinted with permission from Ref. [154], Copyright © 2022 American Chemical Society.

Fig.8 The mimicking neuroplasticity via Cu⁺ ions migration in layered CuInP₂S₆. (a) Schematic diagram of a biological synapse. The lower right part is the CIPS artificial synaptic device. (b) Plot of I−V curves measured at a fixed voltage range (−2 to 2 V) after a voltage sweep from 0 V to positive stimulation voltages (6, 8, 10, 15 V). (c) I−V characteristics of the device at a swept voltage range (−10 to 10 V). The light blue, dark blue and black curves indicate the I−V curves for three consecutive cycles of testing, respectively, and the arrows indicate the direction of scanning. (d) Current at different resistive states of the device read with a voltage of 2 V after the 10 and −10 V scanning. (e) RS stability of the device at a set voltage of 15 V and a reset voltage of −10 V with a V_read of 2 V. (f) Excitatory postsynaptic currents at different V_read after application of a series of 10 V pulses lasting 1 s. (g) PPF on the device triggered by a pair of positively spaced pulses with different intervals. (h) Implementation of STDP based on CIPS devices with exponential functions fitted to the data points. (a−h) Reprinted with permission from Ref. [122], Copyright © 2021 Wiley‐VCH GmbH.

Fig.9 Gate programmable vertical M−FE−S heterojunction memristor. (a) Schematic diagram of the M−FE−S memristor. (b) I−V curves of the M−FE−S memristor under 300 K (room temperature, black) and above T_c 400 K (red). The arrows indicate the scanning direction. (c, d) Reproducibility and retention. (e, f) SEM images of a 3 × 4 M−FE−S array device. (g−i) The letters “I”, “M” and “R” encoded by reading the HRS and LRS of each pixel in the 3 × 4 array. (a−i) Reprinted with permission from Ref. [171], Copyright © 2022 The Authors. Advanced Materials published by Wiley‐VCH GmbH.

Fig.10 (a) Schematic diagram of the Pt/SnS/Pt synapse structure. (b) SnS polarization-electric field (P−E) hysteresis curve. (c) The performance of fatigue resistance and stability in 3 different devices. (d) PPF performance stimulated by applying 10, 30, and 50 presynaptic spikes (V_pulse = 3 V, P_width = 20 ms), read at 0.1 V. (e) LTP/LTD under different pulse amplitude (±3 V to ±5 V). Pulses width: 20 ms. (f) Cyclic LTP/LDP tests of this Pt/SnS/Pt artificial synapse. (g) The diagram of ANNs for the recognition of handwriting Arabic digits. (a−g) Reprinted with permission from Ref. [159], Copyright © 2020 American Chemical Society.

Fig.11 (a) Schematic diagram of a multilayer MoS₂ device consisting of two Cr/Au electrodes. (b) I−V characteristics of the multilayer MoS₂ over 20 cycles, showing excellent stability. (c) HRS and LRS currents retention test over 3000 s. (d) Schematic illustration of the multilayer MoS₂ device under light illumination. (e) The ratio of LRS to HRS changes after light modulation at different power levels, leading to a maximum ratio of 10⁵. (f) After six consecutive light pulses at 1 V bias, the device transitions to long-term memory (LTM) mode (the inset shows that after a single light pulse at 2 mW power, the short-term memory (STM) mode). (a−f) Reprinted with permission from Ref. [173], Copyright © 2021 American Chemical Society.

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[1]	Chaowei He, Jiantian Zhang, Li Gong, Peng Yu. Room-temperature ferroelectricity in van der Waals SnP₂S₆[J]. Front. Phys. , 2024, 19(4): 43202-.

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